Black Phosphorus/Ferroelectric P(VDF-TrFE) Field-Effect Transistors with High Mobility for Energy-Efficient Artificial Synapse in High-Accuracy Neuromorphic Computing.

Dang, Zhaoying; Guo, Feng; Duan, Huan; Zhao, Qiyue; Fu, Yuxiang; Jie, Wenjing; Jin, Kui; Hao, Jianhua

Dang, Zhaoying; Guo, Feng; Duan, Huan; Zhao, Qiyue; Fu, Yuxiang; Jie, Wenjing; Jin, Kui; Hao, Jianhua.

Afiliação

Dang Z; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 999077, China.
Guo F; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.
Duan H; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 999077, China.
Zhao Q; The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China.
Fu Y; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, Sichuan 610066, China.
Jie W; School of Integrated Circuits, Nanjing University, Nanjing, Jiangsu 210093, China.
Jin K; School of Integrated Circuits, Nanjing University, Nanjing, Jiangsu 210093, China.
Hao J; College of Chemistry and Materials Science, Sichuan Normal University, Chengdu, Sichuan 610066, China.

Nano Lett ; 23(14): 6752-6759, 2023 Jul 26.

Article em En | MEDLINE | ID: mdl-37283505

Palavras-chave

2D semiconductors; ferroelectric polymer; neuromorphic computing; nonvolatile memory devices; synaptic transistors

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article