Implementation of Gate-All-Around Gate-Engineered Charge Plasma Nanowire FET-Based Common Source Amplifier.

Singh, Sarabdeep; Solay, Leo Raj; Anand, Sunny; Kumar, Naveen; Ranjan, Ravi; Singh, Amandeep

Singh, Sarabdeep; Solay, Leo Raj; Anand, Sunny; Kumar, Naveen; Ranjan, Ravi; Singh, Amandeep.

Afiliação

Singh S; Model Institute of Engineering and Technology, Jammu 181122, India.
Solay LR; Department of Electronics and Communication Engineering, Amity University, Noida 201313, India.
Anand S; Department of Electronics and Communication Engineering, Amity University, Noida 201313, India.
Kumar N; Department of Electronics and Nanoscale Engineering, University of Glasgow, Glasgow G12 8QQ, UK.
Ranjan R; Dr. B. R. Ambedkar National Institute of Technology, Jalandhar 144008, India.
Singh A; National Institute of Technology, Srinagar 190006, India.

Micromachines (Basel) ; 14(7)2023 Jun 30.

Article em En | MEDLINE | ID: mdl-37512666

Palavras-chave

Nanowire FET; charge plasma; common source amplifier; dual-material channel; gate stacking; single-material gate

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2023 Tipo de documento: Article