Going ballistic: a novel characterization for the electronic energy gap.
Phys Chem Chem Phys
; 25(36): 24234-24243, 2023 Sep 20.
Article
em En
| MEDLINE
| ID: mdl-37665272
ABSTRACT
The energy gap of molecular semiconductors is a critical parameter in molecule-based devices because it fundamentally determines the operating principle and device performance, such as the charge transfer driving force. Hence, an accurate quantification of the energy gap of a molecular semiconductor is essential. The hot electron technique, which is implemented using a hot electron transistor and ballistic electron emission microscope, has been verified as the most powerful characterization in recent years. By monitoring the charge transport on the metal/molecule interface, an electron-injection barrier (or LUMO) and hole-injection barrier (or HOMO) can be achieved, which contributes to the electronic energy gap determination. In this review, a comprehensive comparison of these two techniques was made. It helps us to select a suitable method in specific situations and provides a profound comprehension of the charge transport process in molecular semiconductor and molecule-based devices.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Phys Chem Chem Phys
Ano de publicação:
2023
Tipo de documento:
Article