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Probing the photocurrent in two-dimensional titanium disulfide.
Zhang, Ruan; Zhu, Shuangxing; Wu, Jiaxin; Fan, Yijie; Xie, Binghe; Meng, Jianqiao; Cai, Xinghan.
Afiliação
  • Zhang R; National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Zhu S; Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Wu J; National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Fan Y; Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Xie B; National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Meng J; Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
  • Cai X; National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai 200240, People's Republic of China.
Nanotechnology ; 35(1)2023 Oct 20.
Article em En | MEDLINE | ID: mdl-37797583
ABSTRACT
Generating photocurrent in a condensed matter system involves the excitation, relaxation, and transportation of charge carriers. As such, it is viewed a potent method for probing the dynamics of non-equilibrium carriers and the electronic band structure of solid state materials. In this research, we analyze the photoresponse of the mechanically exfoliated titanium disulfide (TiS2), a transition metal dichalcogenide whose classification as either a semimetal or a semiconductor has been the subject of debate for years. The scanning photocurrent microscopy and the temperature-dependent photoresponse characterization expose the appearance of a photovoltaic current primarily from the metal/TiS2junction in an unbiased sample, while negative photoconductivity due to the bolometric effect is observed in the conductive TiS2channel. The optoelectronic experimental results, combined with electrical transport characterization and angle-resolved photoemission spectroscopy measurements, indicate that the TiS2employed in this study is likely a heavily-doped semiconductor. Our findings unveil the photocurrent generation mechanism of two dimensional TiS2, highlighting its prospective optoelectronic applications in the future.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2023 Tipo de documento: Article