Your browser doesn't support javascript.
loading
High-Throughput Search for Triplet Point Defects with Narrow Emission Lines in 2D Materials.
Ali, Sajid; Nilsson, Fredrik Andreas; Manti, Simone; Bertoldo, Fabian; Mortensen, Jens Jørgen; Thygesen, Kristian Sommer.
Afiliação
  • Ali S; CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
  • Nilsson FA; School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia.
  • Manti S; CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
  • Bertoldo F; CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
  • Mortensen JJ; INFN, Laboratori Nazionali di Frascati, Via E. Fermi 54, I-00044 Roma, Italy.
  • Thygesen KS; CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark.
ACS Nano ; 17(21): 21105-21115, 2023 Nov 14.
Article em En | MEDLINE | ID: mdl-37889165
ABSTRACT
We employ a first-principles computational workflow to screen for optically accessible, high-spin point defects in wide band gap, two-dimensional (2D) crystals. Starting from an initial set of 5388 point defects, comprising both native and extrinsic, single and double defects in ten previously synthesized 2D host materials, we identify 596 defects with a triplet ground state. For these defects, we calculate the defect formation energy, hyperfine (HF) coupling, and zero-field splitting (ZFS) tensors. For 39 triplet transitions exhibiting particularly low Huang-Rhys factors, we calculate the full photoluminescence (PL) spectrum. Our approach reveals many spin defects with narrow PL line shapes and emission frequencies covering a broad spectral range. Most of the defects are hosted in hexagonal BN (hBN), which we ascribe to its high stiffness, but some are also found in MgI2, MoS2, MgBr2 and CaI2. As specific examples, we propose the defects vSMoS0 and NiSMoS0 in MoS2 as interesting candidates with potential applications to magnetic field sensors and quantum information technology.
Palavras-chave

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2023 Tipo de documento: Article