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Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions.
Kong, Zhenzhen; Song, Yanpeng; Wang, Hailing; Liu, Xiaomeng; Wang, Xiangsheng; Liu, Jinbiao; Li, Ben; Su, Jiale; Tan, Xinguang; Luan, Qingjie; Lin, Hongxiao; Ren, Yuhui; Zhang, Yiwen; Liu, Jingxiong; Li, Junfeng; Du, Anyan; Radamson, Henry H; Zhao, Chao; Ye, Tianchun; Wang, Guilei.
Afiliação
  • Kong Z; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China.
  • Song Y; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, P. R. China.
  • Wang H; Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China.
  • Liu X; Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China.
  • Wang X; Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China.
  • Liu J; Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China.
  • Li B; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China.
  • Su J; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, P. R. China.
  • Tan X; Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangdong 510535, P. R. China.
  • Luan Q; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China.
  • Lin H; Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China.
  • Ren Y; Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China.
  • Zhang Y; Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangdong 510535, P. R. China.
  • Liu J; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China.
  • Li J; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, P. R. China.
  • Du A; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China.
  • Radamson HH; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, P. R. China.
  • Zhao C; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China.
  • Ye T; Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, P. R. China.
  • Wang G; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China.
ACS Appl Mater Interfaces ; 15(48): 56567-56574, 2023 Dec 06.
Article em En | MEDLINE | ID: mdl-37988059
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2023 Tipo de documento: Article