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Monolithic 3D integration of 2D materials-based electronics towards ultimate edge computing solutions.
Kang, Ji-Hoon; Shin, Heechang; Kim, Ki Seok; Song, Min-Kyu; Lee, Doyoon; Meng, Yuan; Choi, Chanyeol; Suh, Jun Min; Kim, Beom Jin; Kim, Hyunseok; Hoang, Anh Tuan; Park, Bo-In; Zhou, Guanyu; Sundaram, Suresh; Vuong, Phuong; Shin, Jiho; Choe, Jinyeong; Xu, Zhihao; Younas, Rehan; Kim, Justin S; Han, Sangmoon; Lee, Sangho; Kim, Sun Ok; Kang, Beomseok; Seo, Seungju; Ahn, Hyojung; Seo, Seunghwan; Reidy, Kate; Park, Eugene; Mun, Sungchul; Park, Min-Chul; Lee, Suyoun; Kim, Hyung-Jun; Kum, Hyun S; Lin, Peng; Hinkle, Christopher; Ougazzaden, Abdallah; Ahn, Jong-Hyun; Kim, Jeehwan; Bae, Sang-Hoon.
Afiliação
  • Kang JH; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Shin H; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim KS; Department of Electronic Engineering, Inha University, Incheon, Republic of Korea.
  • Song MK; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.
  • Lee D; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Meng Y; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Choi C; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Suh JM; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim BJ; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim H; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Hoang AT; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, MO, USA.
  • Park BI; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Zhou G; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Sundaram S; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Vuong P; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Shin J; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.
  • Choe J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Xu Z; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Younas R; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.
  • Kim JS; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Han S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Lee S; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
  • Kim SO; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA.
  • Kang B; CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, Metz, France.
  • Seo S; CNRS, Georgia Tech - CNRS IRL 2958, GT-Europe, Metz, France.
  • Ahn H; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Seo S; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Reidy K; School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea.
  • Park E; Institute of Materials Science and Engineering, Washington University in Saint Louis, Saint Louis, MO, USA.
  • Mun S; Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA.
  • Park MC; Institute of Materials Science and Engineering, Washington University in Saint Louis, Saint Louis, MO, USA.
  • Lee S; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, MO, USA.
  • Kim HJ; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kum HS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Lin P; Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, Saint Louis, MO, USA.
  • Hinkle C; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Ougazzaden A; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Ahn JH; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Kim J; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Bae SH; Future Innovation Research Center, Korea Aerospace Research Institute, Daejeon, Republic of Korea.
Nat Mater ; 22(12): 1470-1477, 2023 Dec.
Article em En | MEDLINE | ID: mdl-38012388
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Mater Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Mater Ano de publicação: 2023 Tipo de documento: Article