Synergistic effect of surface metal vacancies and Schottky junction on high-transconductance organic photoelectrochemical transistor aptasensing.
Chem Commun (Camb)
; 60(21): 2934-2937, 2024 Mar 07.
Article
em En
| MEDLINE
| ID: mdl-38372635
ABSTRACT
The synergistic effect between surface metal vacancies and a Schottky junction on enhanced transconductance, and the gating effect of an organic photoelectrochemical transistor was reported.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Chem Commun (Camb)
/
Chem. commun. (Lond., 1996, Online)
/
Chemical communications (London. 1996. Online)
Ano de publicação:
2024
Tipo de documento:
Article