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Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition.
Pang, Xingchen; Wang, Yang; Zhu, Yuyan; Zhang, Zhenhan; Xiang, Du; Ge, Xun; Wu, Haoqi; Jiang, Yongbo; Liu, Zizheng; Liu, Xiaoxian; Liu, Chunsen; Hu, Weida; Zhou, Peng.
Afiliação
  • Pang X; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
  • Wang Y; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China. yang_wang@fudan.edu.cn.
  • Zhu Y; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China. yang_wang@fudan.edu.cn.
  • Zhang Z; Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China. yang_wang@fudan.edu.cn.
  • Xiang D; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
  • Ge X; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
  • Wu H; State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China. xiang_du@fudan.edu.cn.
  • Jiang Y; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China. xiang_du@fudan.edu.cn.
  • Liu Z; Shanghai Qi Zhi Institute, Shanghai, 200232, China. xiang_du@fudan.edu.cn.
  • Liu X; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
  • Liu C; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
  • Hu W; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
  • Zhou P; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Nat Commun ; 15(1): 1613, 2024 Feb 22.
Article em En | MEDLINE | ID: mdl-38383735
ABSTRACT
In-sensor processing has the potential to reduce the energy consumption and hardware complexity of motion detection and recognition. However, the state-of-the-art all-in-one array integration technologies with simultaneous broadband spectrum image capture (sensory), image memory (storage) and image processing (computation) functions are still insufficient. Here, macroscale (2 × 2 mm2) integration of a rippled-assisted optoelectronic array (18 × 18 pixels) for all-day motion detection and recognition. The rippled-assisted optoelectronic array exhibits remarkable uniformity in the memory window, optically stimulated non-volatile positive and negative photoconductance. Importantly, the array achieves an extensive optical storage dynamic range exceeding 106, and exceptionally high room-temperature mobility up to 406.7 cm2 V-1 s-1, four times higher than the International Roadmap for Device and Systems 2028 target. Additionally, the spectral range of each rippled-assisted optoelectronic processor covers visible to near-infrared (405 nm-940 nm), achieving function of motion detection and recognition.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun / Nature communications Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun / Nature communications Ano de publicação: 2024 Tipo de documento: Article