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Strain regulates the photovoltaic performance of thick-film perovskites.
Shi, Pengju; Xu, Jiazhe; Yavuz, Ilhan; Huang, Tianyi; Tan, Shaun; Zhao, Ke; Zhang, Xu; Tian, Yuan; Wang, Sisi; Fan, Wei; Li, Yahui; Jin, Donger; Yu, Xuemeng; Wang, Chenyue; Gao, Xingyu; Chen, Zhong; Shi, Enzheng; Chen, Xihan; Yang, Deren; Xue, Jingjing; Yang, Yang; Wang, Rui.
Afiliação
  • Shi P; State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Xu J; Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China.
  • Yavuz I; State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Huang T; Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China.
  • Tan S; Department of Physics, Marmara University, Ziverbey, Istanbul, 34722, Turkey.
  • Zhao K; Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.
  • Zhang X; Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA.
  • Tian Y; State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Wang S; Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China.
  • Fan W; State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Li Y; Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China.
  • Jin D; State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Yu X; Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China.
  • Wang C; Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China.
  • Gao X; State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Chen Z; Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China.
  • Shi E; State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Chen X; Research Center for Industries of the Future, School of Engineering, Westlake University and Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024, China.
  • Yang D; State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Xue J; Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China.
  • Yang Y; Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai, 201204, China.
  • Wang R; Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai, 201204, China.
Nat Commun ; 15(1): 2579, 2024 Mar 22.
Article em En | MEDLINE | ID: mdl-38519495
ABSTRACT
Perovskite photovoltaics, typically based on a solution-processed perovskite layer with a film thickness of a few hundred nanometres, have emerged as a leading thin-film photovoltaic technology. Nevertheless, many critical issues pose challenges to its commercialization progress, including industrial compatibility, stability, scalability and reliability. A thicker perovskite film on a scale of micrometres could mitigate these issues. However, the efficiencies of thick-film perovskite cells lag behind those with nanometre film thickness. With the mechanism remaining elusive, the community has long been under the impression that the limiting factor lies in the short carrier lifetime as a result of defects. Here, by constructing a perovskite system with extraordinarily long carrier lifetime, we rule out the restrictions of carrier lifetime on the device performance. Through this, we unveil the critical role of the ignored lattice strain in thick films. Our results provide insights into the factors limiting the performance of thick-film perovskite devices.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Ano de publicação: 2024 Tipo de documento: Article