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Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4.
Li, Yaoxin; Wang, Yongchao; Lian, Zichen; Li, Hao; Gao, Zhiting; Xu, Liangcai; Wang, Huan; Lu, Rui'e; Li, Longfei; Feng, Yang; Zhu, Jinjiang; Liu, Liangyang; Wang, Yongqian; Fu, Bohan; Yang, Shuai; Yang, Luyi; Wang, Yihua; Xia, Tianlong; Liu, Chang; Jia, Shuang; Wu, Yang; Zhang, Jinsong; Wang, Yayu; Liu, Chang.
Afiliação
  • Li Y; Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing, 100084, China.
  • Wang Y; Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing, 100084, China.
  • Lian Z; Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing, 100084, China.
  • Li H; School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
  • Gao Z; Department of Physics, Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China.
  • Xu L; Beijing Academy of Quantum Information Sciences, Beijing, 100193, China.
  • Wang H; Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing, 100084, China.
  • Lu R; Department of Physics, Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-Nano Devices, Renmin University of China, 100872, Beijing, China.
  • Li L; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China.
  • Feng Y; School of Mechanical and Electric Engineering, Guangzhou University, Guangzhou, 510006, China.
  • Zhu J; International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China.
  • Liu L; Beijing Academy of Quantum Information Sciences, Beijing, 100193, China.
  • Wang Y; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.
  • Fu B; Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing, 100084, China.
  • Yang S; Department of Physics, Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-Nano Devices, Renmin University of China, 100872, Beijing, China.
  • Yang L; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China.
  • Wang Y; Department of Physics, Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-Nano Devices, Renmin University of China, 100872, Beijing, China.
  • Xia T; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China.
  • Liu C; Department of Physics, Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-Nano Devices, Renmin University of China, 100872, Beijing, China.
  • Jia S; Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China.
  • Wu Y; Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing, 100084, China.
  • Zhang J; Frontier Science Center for Quantum Information, Beijing, 100084, China.
  • Wang Y; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.
  • Liu C; Shanghai Research Center for Quantum Sciences, Shanghai, 201315, China.
Nat Commun ; 15(1): 3399, 2024 Apr 22.
Article em En | MEDLINE | ID: mdl-38649376
ABSTRACT
The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Ano de publicação: 2024 Tipo de documento: Article