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High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs.
Chen, Liang; Xie, Shaohua; Lan, Jianyu; Chai, Jixing; Lin, Tingjun; Hao, Ququ; Chen, Jinrong; Deng, Xi; Hu, Xiaolong; Li, Yuan; Wang, Wenliang; Li, Guoqiang.
Afiliação
  • Chen L; State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China.
  • Xie S; School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, China.
  • Lan J; State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China.
  • Chai J; Shanghai Institute of Space Power-Sources, State Key Laboratory of Space Power-Sources Technology, Shanghai 200003, China.
  • Lin T; International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, China.
  • Hao Q; State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China.
  • Chen J; State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China.
  • Deng X; State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China.
  • Hu X; State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China.
  • Li Y; School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, China.
  • Wang W; International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, China.
  • Li G; State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China.
ACS Appl Mater Interfaces ; 16(22): 29477-29487, 2024 Jun 05.
Article em En | MEDLINE | ID: mdl-38773964
ABSTRACT
InGaN nanorods possessing larger and wavelength selective absorption by regulating In component based visible light photodetectors (PDs) as one of the key components in the field of visible light communication have received widespread attention. Currently, the weak photoelectric conversion efficiency and slow photoresponse speed of InGaN nanorod (NR) based PDs due to high surface states of InGaN NRs impede the actualization of high-responsivity and high-speed blue light PDs. Here, we have demonstrated high-performance InGaN NR/PEDOTPSS@Ag nanowire (NW) heterojunction blue light photodetectors utilizing surface passivation and a localized surface plasmon resonance effect. The dark current is significantly reduced by passivating the InGaN NR surface states using PEDOTPSS. The photoelectric conversion efficiency is significantly increased by increasing light absorption due to the electromagnetic field oscillation of Ag NWs. The responsivity, external quantum efficiency, detectivity, and fall/off time of the InGaN NR/PEDOTPSS@Ag NW PDs are up to 2.9 A/W, 856%, 6.64 × 1010 Jones, and 439/725 µs, respectively, under 1 V bias and 420 nm illumination. The proposed device design presents a novel approach toward the development of low-cost, high-responsivity, high-speed blue light photodetectors for applications involving visible light communication.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Ano de publicação: 2024 Tipo de documento: Article