Effect of Compressive Stress on Copper Bonding Quality and Bonding Mechanisms in Advanced Packaging.
Materials (Basel)
; 17(10)2024 May 09.
Article
em En
| MEDLINE
| ID: mdl-38793303
ABSTRACT
The thermal expansion behavior of Cu plays a critical role in the bonding mechanism of Cu/SiO2 hybrid joints. In this study, artificial voids, which were observed to evolve using a focused ion beam, were introduced at the bonded interfaces to investigate the influence of compressive stress on bonding quality and mechanisms at elevated temperatures of 250 °C and 300 °C. The evolution of interfacial voids serves as a key indicator for assessing bonding quality. We quantified the bonding fraction and void fraction to characterize the bonding interface and found a notable increase in the bonding fraction and a corresponding decrease in the void fraction with increasing compressive stress levels. This is primarily attributed to the Cu film exhibiting greater creep/elastic deformation under higher compressive stress conditions. Furthermore, these experimental findings are supported by the surface diffusion creep model. Therefore, our study confirms that compressive stress affects the Cu-Cu bonding interface, emphasizing the need to consider the depth of Cu joints during process design.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Materials (Basel)
Ano de publicação:
2024
Tipo de documento:
Article