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An experimental investigation of spin-on doping optimization for enhanced electrical characteristics in silicon homojunction solar cells: Proof of concept.
Mohamad, Ili Salwani; Ker, Pin Jern; Chelvanathan, Puvaneswaran; Norizan, Mohd Natashah; Yap, Boon Kar; Tiong, Sieh Kiong; Amin, Nowshad.
Afiliação
  • Mohamad IS; Department of Electrical and Electronic Engineering, Universiti Tenaga Nasional, Kajang, 43000, Malaysia.
  • Ker PJ; Universiti Malaysia Perlis (UniMAP), Arau, 02600, Malaysia.
  • Chelvanathan P; Department of Electrical and Electronic Engineering, Universiti Tenaga Nasional, Kajang, 43000, Malaysia.
  • Norizan MN; School of Engineering and Technology, Sunway University, Bandar Sunway 47500, Malaysia.
  • Yap BK; Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, 43600, Malaysia.
  • Tiong SK; Universiti Malaysia Perlis (UniMAP), Arau, 02600, Malaysia.
  • Amin N; Geopolymer and Green Technology, Centre of Excellent (CEGeoGTech), Universiti Malaysia Perlis (UniMAP), Arau, 02600, Malaysia.
Heliyon ; 10(11): e31193, 2024 Jun 15.
Article em En | MEDLINE | ID: mdl-38828347
ABSTRACT
The pursuit of enhancing the performance of silicon-based solar cells is pivotal for the progression of solar photovoltaics as the most potential renewable energy technologies. Despite the existence of sophisticated methods like diffusion and ion implantation for doping phosphorus into p-type silicon wafers in the semiconductor industry, there is a compelling need to research spin-on doping techniques, especially in the context of tandem devices, where fabricating the bottom cell demands meticulous control over conditions. The primary challenge with existing silicon cell fabrication methods lies in their complexity, cost, and environmental concerns. Thus, this research focuses on the optimization of parameters, such as, deposition of the spin on doping layer, emitter thickness (Xj), and dopant concentration (ND) to maximize solar cell efficiency. We utilized both fabrication and simulation techniques to delve into these factors. Employing silicon wafer thickness of 625 µm, the study explored the effects of altering the count of dopant layers through the spin-on dopant (SOD) technique in the device fabrication. Interestingly, the increase of the dopant layers from 1 to 4 enhances efficiency, whereby, further addition of 6 and 8 layers worsens both series and shunt resistances, affecting the solar cell performance. The peak efficiency of 11.75 % achieved in fabrication of 4 layers dopant. By using device simulation with wxAMPS to perform a combinatorial analysis of Xj and ND, we further identified the optimal conditions for an emitter to achieve peak performance. Altering Xj between 0.05 µm and 10 µm and adjusting ND from 1e+15 cm-3 to 9e+15 cm-3, we found that maximum efficiency of 14.18 % was attained for Xj = 1 µm and ND = 9e+15 cm-3. This research addresses a crucial knowledge gap, providing insights for creating more efficient, cost-effective, and flexible silicon solar cells, thereby enhancing their viability as a sustainable energy source.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Heliyon Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Heliyon Ano de publicação: 2024 Tipo de documento: Article