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Structural, elastic, electronic, optical and anisotropy properties of newly quaternary Tl2HgGeSe4 via DFPT predictions associated to XPES and RS experiments.
Halati, Mohamed Salah; Khyzhun, Oleg Yu; Khireddine, Abderrazak; Piasecki, Michal; Radkowska, Ilona; Cherif, Khaled Hamdi; Lounis, Zakia; Caudano, Yves; Bedjaoui, Abdelhak; Alghamdi, Ahmed; Paramasivam, Prabhu; Prakash, Chander; Ghoneim, Sherif S M.
Afiliação
  • Halati MS; Scientific and Technical Research Centre for Arid Areas (C.R.S.T.R.A), water resources and treatments team, Omar El Barnaoui, Campus of Mohamed, Khider University of Biskra, 07000, Biskra, Algeria. mohamedsalah.halati@yahoo.fr.
  • Khyzhun OY; Laboratory of Materials (LabMat), National Polytechnique School (ENP-Maurice Audin -Oran-), El M'naouer, P.O. Box 1523, 31000, Oran, Algeria. mohamedsalah.halati@yahoo.fr.
  • Khireddine A; Modeling and simulations for Laser applications team, Research Center in Industrial Technologies (CRTI), P. O. Box 64, 16014, Cheraga, Algiers, Algeria. mohamedsalah.halati@yahoo.fr.
  • Piasecki M; Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, Kyiv, 03142, Ukraine.
  • Radkowska I; Department of Experimental Physics and Information-Measuring Technology, Lesya Ukrainka Volyn National University, 13 Voli Avenue, Lutsk, UA-43025, Ukraine.
  • Cherif KH; Laboratory for Developing New Materials and Their Characterizations, Department of Physics, Faculty of Science, University Ferhat Abbas Setif 1, 19000, Setif, Algeria.
  • Lounis Z; Jan Dlugosz University in Czestochowa, Armii Krajowej 13/15, PL-42-217, Czestochowa, Poland.
  • Caudano Y; Jan Dlugosz University in Czestochowa, Armii Krajowej 13/15, PL-42-217, Czestochowa, Poland.
  • Bedjaoui A; Modeling and simulations for Laser applications team, Research Center in Industrial Technologies (CRTI), P. O. Box 64, 16014, Cheraga, Algiers, Algeria.
  • Alghamdi A; Laboratory of Materials (LabMat), National Polytechnique School (ENP-Maurice Audin -Oran-), El M'naouer, P.O. Box 1523, 31000, Oran, Algeria.
  • Paramasivam P; Research Unit Lasers and Spectroscopies (UR-LLS), naXys & NISM, Université de Namur, Rue de Bruxelles 61, 5000, Namur, Belgium.
  • Prakash C; Department of Technology, Faculty of Technology, Bejaia University, 6000, Bejaia, Algeria.
  • Ghoneim SSM; Department of Mechanical and Industrial Engineering, College of Engineering and Computing in Al-Qunfudhah, Umm Al-Qura University, Mecca, Saudi Arabia.
Sci Rep ; 14(1): 16293, 2024 Jul 15.
Article em En | MEDLINE | ID: mdl-39009787
ABSTRACT
In the present work, we report on theoretical studies of thermodynamic properties, structural and dynamic stabilities, dependence of unit-cell parameters and elastic constants upon hydrostatic pressure, charge carrier effective masses, electronic and optical properties, contributions of interband transitions in the Brillouin zone of the novel Tl2HgGeSe4 crystal. The theoretical calculations within the framework of the density-functional perturbation theory (DFPT) are carried out employing different approaches to gain the best correspondence to the experimental data. The present theoretical data indicate the dynamical stability of the title crystal and they reveal that, under hydrostatic pressure, it is much more compressible along the a-axis than along the c-axis. Strikingly, the charge effective mass values ( m e ∗ and m h ∗ ) vary considerably when the high symmetry direction changes indicating a relative anisotropy of the charge-carrier's mobility. Furthermore, the Young modulus and compressibility are characterized by the maximum and minimum values ( E max and E min ) and ( ß max and ß min ) that are equal to (62.032 and 28.812) GPa and (13.672 and 6.7175) TPa-1, respectively. Additionally, we have performed calculations of the Raman spectra (RS) and reached a good correspondence with the experimental RS spectra of the Tl2HgGeSe4 crystal. The XPES associated to RS constitutes powerful techniques to explore the oxidized states of Se and Ge in Tl2HgGeSe4 system.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2024 Tipo de documento: Article