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Mn-inlaid antiphase boundaries in perovskite structure.
Li, Chao; Wang, Lingyan; Xu, Liqiang; Ren, Xuerong; Yao, Fangzhou; Lu, Jiangbo; Wang, Dong; Liang, Zhongshuai; Huang, Ping; Wu, Shengqiang; Jing, Hongmei; Zhang, Yijun; Dong, Guohua; Liu, Haixia; Ma, Chuansheng; Lyu, Yinong; Wei, Xiaoyong; Ren, Wei; Wang, Ke; Ye, Zuo-Guang; Chen, Feng.
Afiliação
  • Li C; Instrumental Analysis Center, Xi'an Jiaotong University, Xi'an, China.
  • Wang L; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China. l.y.wang@mail.xjtu.edu.cn.
  • Xu L; Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, China. xuliqiang@ahu.edu.cn.
  • Ren X; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China.
  • Yao F; Research Center for Advanced Functional Ceramics, Wuzhen Laboratory, Jiaxing, China.
  • Lu J; School of Physics and Information Technology, Shaanxi Normal University, Xi'an, China.
  • Wang D; Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, China.
  • Liang Z; School of Chemistry, Xi'an Jiaotong University, Xi'an, China.
  • Huang P; Laboratory for Complex, Collective and Critical phenomena (L3C), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China.
  • Wu S; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Jing H; School of Physics and Information Technology, Shaanxi Normal University, Xi'an, China.
  • Zhang Y; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China.
  • Dong G; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China.
  • Liu H; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China.
  • Ma C; Instrumental Analysis Center, Xi'an Jiaotong University, Xi'an, China.
  • Lyu Y; The State Key Laboratory of Materials-Oriented Chemical Engineering, College of Materials Science and Engineering, Nanjing Tech University, Nanjing, China.
  • Wei X; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China.
  • Ren W; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China.
  • Wang K; Research Center for Advanced Functional Ceramics, Wuzhen Laboratory, Jiaxing, China.
  • Ye ZG; Department of Chemistry & 4D LABS, Simon Fraser University, Burnaby, B.C., Canada.
  • Chen F; Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, China. fchen@hmfl.ac.cn.
Nat Commun ; 15(1): 6735, 2024 Aug 07.
Article em En | MEDLINE | ID: mdl-39112446
ABSTRACT
Improvements in the polarization of environmentally-friendly perovskite ferroelectrics have proved to be a challenging task in order to replace the toxic Pb-based counterparts. In contrast to common methods by complex chemical composition designs, we have formed Mn-inlaid antiphase boundaries in Mn-doped (K,Na)NbO3 thin films using pulsed laser deposition method. Here, we observed that mono- or bi-atomic layer of Mn has been identified to inlay along the antiphase boundaries to balance the charges originated from the deficiency of alkali ions and to induce the strain in the KNN films. Thus, rectangular saturated polarization-electric field hysteresis loops have been achieved, with a significantly improved twice remanent polarization of 114 µC/cm2 with an applied electric field of 606 kV/cm, which can be comparable to that of the typical Pb-based thin films. Moreover, we directly see the Mn occupation at the A-site of KNN perovskite structure using atomic-scale microstructure and composition analysis. The Mn-inlaid antiphase boundary can further enrich the understanding of perovskite crystal structure and give more possibilities for the design and optimization of perovskite materials.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Commun Ano de publicação: 2024 Tipo de documento: Article