Your browser doesn't support javascript.
loading
Characteristics of Carbon Nanotube Cold Cathode Triode Electron Gun Driven by MOSFET Working at Subthreshold Region.
Guo, Yajie; Li, Baohong; Zhang, Yu; Deng, Shaozhi; Chen, Jun.
Afiliação
  • Guo Y; State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
  • Li B; State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
  • Zhang Y; State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
  • Deng S; State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
  • Chen J; State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
Nanomaterials (Basel) ; 14(15)2024 Jul 28.
Article em En | MEDLINE | ID: mdl-39120365
ABSTRACT
The carbon nanotube cold cathode has important applications in the X-ray source, microwave tube, neutralizer, etc. In this study, the characteristics of carbon nanotube (CNT) electron gun in series with metal-oxide-semiconductor field-effect transistor (MOSFET) were studied. CNTs were prepared on a stainless steel substrate by chemical vapor deposition and assembled with a mesh gate to form an electron gun. The anode current of the electron gun can be accurately regulated by precisely controlling the MOSFET gate voltage in the subthreshold region from 1 to 40 µA. The current stability measurements show the cathode current fluctuation was 0.87% under 10 h continuous operation, and the corresponding anode current fluctuation was 2.3%. The result has demonstrated that the MOSFET can be applied for the precise control of the CNT electron gun and greatly improve current stability.
Palavras-chave

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2024 Tipo de documento: Article