Topography evolution of 500 keV Ar(4+) ion beam irradiated InP(100) surfaces - formation of self-organized In-rich nano-dots and scaling laws.

We report the formation of self-organized nano-dots on the surface of InP(100) upon irradiating it with a 500 keV Ar(4+) ion beam. The irradiation was carried out at an angle of 25° with respect to the normal at the surface with 5 different fluences ranging from 1.0 × 10(15) to 1.0 × 10(17) ions per cm(2). The morphology of the ion-irradiated surfaces was examined by atomic force microscopy (AFM) and the formation of the nano-dots on the irradiated surfaces was confirmed. The average size of the nano-dots varied from 44 ± 14 nm to 94 ± 26 nm with increasing ion fluence. As a function of the ion fluence, the variation in the average size of the nano-dots has a great correlation with the surface roughness, which changes drastically up to the ion fluence of 1.0 × 10(16) ions per cm(2) and attains almost a saturation level for further irradiation. The roughness and the growth exponent values deduced from the scaling laws suggest that the kinetic sputtering and the large surface diffusion steps of the atoms are the primary reasons for the formation of the self-organized nanodots on the surface. X-ray photo-electron spectroscopy (XPS) studies show that the surface stoichiometry changes with the ion fluence. With irradiation, the surface becomes more indium (In)-rich owing to the preferential sputtering of the phosphorus atoms (P) and the pure metallic In nano-dots evolve at the highest ion fluence. The cross-sectional scanning electron microscopy (SEM) analysis of the sample irradiated with the highest fluence showed the absence of the nanostructuring beneath the surface. The surface morphological changes at this medium energy ion irradiation are discussed in correlation with the low and high energy experiments to shed more light on the mechanism of the well separated nano-dot formation.

Quasi-aligned gold nanodots on a nanorippled silica surface: experimental and atomistic simulation investigations.

Quasi-aligned gold nanodots with a periodicity of ∼ 40 nm have been synthesized on a silica substrate by oblique deposition of gold on fast argon atom-beam-created nanoripples of wavelength 40 nm and subsequent annealing. The size distribution of these aligned nanodots resulting from oblique deposition at 85° of 0.5 nm Au film perpendicular to ripples is narrower than the similar deposition on a flat surface. The deposition and annealing process was simulated with a three-dimensional kinetic lattice Monte Carlo technique in order to understand the formation of aligned nanodots. The atomistic simulation and the experimental results suggest that there is an optimal thickness which can result in nanodots aligned along the ripples in the case of depositions perpendicular to the ripples. The nanodots formed after annealing of the films deposited parallel to ripples or on flat surface lack alignment.

Structure-modified stress dynamics and wetting characteristics of carbon nanotubes and multilayer graphene for electron field emission investigations.

In the present work, feasibility of achieving enhanced electron field-emission properties of stress-induced carbon nanotubes (CNTs) and multilayer graphene (MLGs) by ion modification is studied. Micro-Raman spectroscopy is used as a potent technique for in-depth investigations of stress-induced CNTs and MLGs. It is found that iron used as a catalyst, compresses at particular fluence and induces stresses in CNTs and MLGs to modify these structures, supported by high-resolution transmission electron microscopy (HRTEM) studies. The stresses are explained by the buckling wavelength (λ ∝ e((r/t)0.5)). Furthermore, the stresses induced in exotic nanostructures are studied for investigating wetting properties, which are well-corroborated with electron emission characteristics. It is found out that less-wetted CNTs and MLGs display enhanced emission properties with turn-on voltages (Eon) of 1.5 and 2.1 V/µm, respectively, in comparison to hydrophilic CNTs and MLGs with Eon of 2.6 and 4 V/µm, respectively.

A study on the consequence of swift heavy ion irradiation of Zn-silica nanocomposite thin films: electronic sputtering.

Zn-silica nanocomposite thin films with varying Zn metal content, deposited by atom beam sputtering technique were subjected to 100 MeV Ag ion irradiation. Rutherford backscattering spectrometry reveals the loss of Zn with irradiation, which is observed to be greater from thin films with lower Zn content. The sputtered species collected on carbon-coated transmission electron microscopy (TEM) grids consist of Zn nanoparticles of sizes comparable to those present in the nanocomposite thin film. The process of size-dependent electronic sputtering of Zn is explained on the basis of an inelastic thermal spike model. The possibility of direct cluster emission is explained by pressure spike built inside the track, initiated by a temperature spike.