Nonreciprocal Supercurrents in a Field-Free Graphene Josephson Triode.

Superconducting diodes are proposed nonreciprocal circuit elements that should exhibit nondissipative transport in one direction while being resistive in the opposite direction. Multiple examples of such devices have emerged in the past couple of years; however, their efficiency is typically limited, and most of them require a magnetic field to function. Here we present a device that achieves efficiencies approaching 100% while operating at zero field. Our samples consist of a network of three graphene Josephson junctions linked by a common superconducting island, to which we refer as a Josephson triode. The three-terminal nature of the device inherently breaks the inversion symmetry, and the control current applied to one of the contacts breaks the time-reversal symmetry. The triode's utility is demonstrated by rectifying a small (nA scale amplitude) applied square wave. We speculate that devices of this type could be realistically employed in the modern quantum circuits.

Loss and Decoherence at the Quantum Hall-Superconductor Interface.

We perform a systematic study of Andreev conversion at the interface between a superconductor and graphene in the quantum Hall (QH) regime. We find that the probability of Andreev conversion from electrons to holes follows an unexpected but clear trend: the dependencies on temperature and magnetic field are nearly decoupled. We discuss these trends and the role of the superconducting vortices, whose normal cores could both absorb and dephase the individual electrons in a QH edge. Our Letter may pave the road to engineering a future generation of hybrid devices for exploiting superconductivity proximity in chiral channels.

Dynamical Stabilization of Multiplet Supercurrents in Multiterminal Josephson Junctions.

The dynamical properties of multiterminal Josephson junctions (MT-JJs) have attracted interest, driven by the promise of new insights into synthetic topological phases of matter and Floquet states. This effort has culminated in the discovery of Cooper multiplets in which the splitting of a Cooper pair is enabled via a series of Andreev reflections that entangle four (or more) electrons. Here, we show that multiplet resonances can also emerge as a consequence of the three-terminal circuit model. The supercurrent appears due to correlated phase dynamics at values that correspond to the multiplet condition nV1 = -mV2 of applied bias. Multiplet resonances are seen in nanofabricated three-terminal graphene JJs, analog three-terminal JJ circuits, and circuit simulations. The stabilization of the supercurrent is purely dynamical, and a close analog to Kapitza's inverted pendulum problem. We describe parameter considerations that optimize the detection of the multiplet lines both for design of future devices.

Graphene-Based Quantum Hall Interferometer with Self-Aligned Side Gates.

The vanishing band gap of graphene has long presented challenges for making high-quality quantum point contacts (QPCs)─the partially transparent p-n interfaces introduced by conventional split gates tend to short circuit the QPCs. This complication has hindered the fabrication of graphene quantum Hall Fabry-Pérot interferometers, until recent advances have allowed split-gate QPCs to operate utilizing the highly resistive ν = 0 state. Here, we present a simple recipe to fabricate QPCs by etching a narrow trench in the graphene sheet to separate the conducting channel from self-aligned graphene side gates. We demonstrate operation of the individual QPCs in the quantum Hall regime and further utilize these QPCs to create and study a quantum Hall interferometer.

Multiterminal Inverse AC Josephson Effect.

When a Josephson junction is exposed to microwave radiation, it undergoes the inverse AC Josephson effect─the phase of the junction locks to the drive frequency. As a result, the I-V curves of the junction acquire "Shapiro steps" of quantized voltage. If the junction has three or more superconducting contacts, coupling between different pairs of terminals must be taken into account and the state of the junction evolves in a phase space of higher dimensionality. Here, we study the multiterminal inverse AC Josephson effect in a graphene sample with three superconducting terminals. We observe robust fractional Shapiro steps and correlated switching events, which can only be explained by considering the device as a completely connected Josephson network. We successfully simulate the observed behaviors using a modified two-dimensional RCSJ model. Our results suggest that multiterminal Josephson junctions are a playground to study highly connected nonlinear networks with novel topologies.

Zero Crossing Steps and Anomalous Shapiro Maps in Graphene Josephson Junctions.

The AC Josephson effect manifests itself in the form of "Shapiro steps" of quantized voltage in Josephson junctions subject to radiofrequency (RF) radiation. This effect presents an early example of a driven-dissipative quantum phenomenon and is presently utilized in primary voltage standards. Shapiro steps have also become one of the standard tools to probe junctions made in a variety of novel materials. Here we study Shapiro steps in a widely tunable graphene-based Josephson junction in which the high-frequency dynamics is determined by the on-chip environment. We investigate the variety of patterns that can be obtained in this well-understood system depending on the carrier density, temperature, RF frequency, and magnetic field. Although the patterns of Shapiro steps can change drastically when just one parameter is varied, the overall trends can be understood and the behaviors straightforwardly simulated, showing some key differences from the conventional RCSJ model. The resulting understanding may help interpret similar measurements in more complex materials.

Supercurrent Flow in Multiterminal Graphene Josephson Junctions.

We investigate the electronic properties of ballistic planar Josephson junctions with multiple superconducting terminals. Our devices consist of monolayer graphene encapsulated in boron nitride with molybdenum-rhenium contacts. Resistance measurements yield multiple resonant features, which are attributed to supercurrent flow among adjacent and nonadjacent Josephson junctions. In particular, we find that superconducting and dissipative currents coexist within the same region of graphene. We show that the presence of dissipative currents primarily results in electron heating and estimate the associated temperature rise. We find that the electrons in encapsulated graphene are efficiently cooled through the electron-phonon coupling.

Critical Current Scaling in Long Diffusive Graphene-Based Josephson Junctions.

We present transport measurements on long, diffusive, graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ∼9 µm but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in these junctions ranges from a few nanoamperes up to more than 5 µA, while the Thouless energy, ETh, covers almost 2 orders of magnitude. Over much of this range, the product of the critical current and the normal resistance ICRN is found to scale linearly with ETh, as expected from theory. However, the value of the ratio ICRN/ETh is found to be 0.1-0.2, which much smaller than the predicted ∼10 for long diffusive SNS junctions.

Unconventional Correlation between Quantum Hall Transport Quantization and Bulk State Filling in Gated Graphene Devices.

We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly, a comparison of these measurements reveals that quantized transport typically occurs below the complete filling of bulk Landau levels, when the bulk is still conductive. This result points to a revised understanding of transport quantization when carriers are accumulated by gating. We discuss the implications on transport study of the quantum Hall effect in graphene and related topological states in other two-dimensional electron systems.

Effective cleaning of hexagonal boron nitride for graphene devices.

Hexagonal boron nitride (h-BN) films have attracted considerable interest as substrates for graphene. ( Dean, C. R. et al. Nat. Nanotechnol. 2010 , 5 , 722 - 6 ; Wang, H. et al. Electron Device Lett. 2011 , 32 , 1209 - 1211 ; Sanchez-Yamagishi, J. et al. Phys. Rev. Lett. 2012 , 108 , 1 - 5 .) We study the presence of organic contaminants introduced by standard lithography and substrate transfer processing on h-BN films exfoliated on silicon oxide substrates. Exposure to photoresist processing adds a large broad luminescence peak to the Raman spectrum of the h-BN flake. This signal persists through typical furnace annealing recipes (Ar/H(2)). A recipe that successfully removes organic contaminants and results in clean h-BN flakes involves treatment in Ar/O(2) at 500 °C.

Quantum Hall-based superconducting interference device.

We present a study of a graphene-based Josephson junction with dedicated side gates carved from the same sheet of graphene as the junction itself. These side gates are highly efficient and allow us to modulate carrier density along either edge of the junction in a wide range. In particular, in magnetic fields in the 1- to 2-T range, we are able to populate the next Landau level, resulting in Hall plateaus with conductance that differs from the bulk filling factor. When counter-propagating quantum Hall edge states are introduced along either edge, we observe a supercurrent localized along that edge of the junction. Here, we study these supercurrents as a function of magnetic field and carrier density.

Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene.

The fractional quantum Hall effect is a canonical example of electron-electron interactions producing new ground states in many-body systems. Most fractional quantum Hall studies have focussed on the lowest Landau level, whose fractional states are successfully explained by the composite fermion model. In the widely studied GaAs-based system, the composite fermion picture is thought to become unstable for the N≥2 Landau level, where competing many-body phases have been observed. Here we report magneto-resistance measurements of fractional quantum Hall states in the N=2 Landau level (filling factors 4<|ν|<8) in bilayer graphene. In contrast with recent observations of particle-hole asymmetry in the N=0/N=1 Landau levels of bilayer graphene, the fractional quantum Hall states we observe in the N=2 Landau level obey particle-hole symmetry within the fully symmetry-broken Landau level. Possible alternative ground states other than the composite fermions are discussed.

Switchable friction enabled by nanoscale self-assembly on graphene.

Graphene monolayers are known to display domains of anisotropic friction with twofold symmetry and anisotropy exceeding 200%. This anisotropy has been thought to originate from periodic nanoscale ripples in the graphene sheet, which enhance puckering around a sliding asperity to a degree determined by the sliding direction. Here we demonstrate that these frictional domains derive not from structural features in the graphene but from self-assembly of environmental adsorbates into a highly regular superlattice of stripes with period 4-6 nm. The stripes and resulting frictional domains appear on monolayer and multilayer graphene on a variety of substrates, as well as on exfoliated flakes of hexagonal boron nitride. We show that the stripe-superlattices can be reproducibly and reversibly manipulated with submicrometre precision using a scanning probe microscope, allowing us to create arbitrary arrangements of frictional domains within a single flake. Our results suggest a revised understanding of the anisotropic friction observed on graphene and bulk graphite in terms of adsorbates.