Top-Down Fabrication of Bulk-Insulating Topological Insulator Nanowires for Quantum Devices.

In a nanowire (NW) of a three-dimensional topological insulator (TI), the quantum confinement of topological surface states leads to a peculiar sub-band structure that is useful for generating Majorana bound states. Top-down fabrication of TINWs from a high-quality thin film would be a scalable technology with great design flexibility, but there has been no report on top-down-fabricated TINWs where the chemical potential can be tuned to the charge neutrality point (CNP). Here we present a top-down fabrication process for bulk-insulating TINWs etched from high-quality (Bi1-xSbx)2Te3 thin films without degradation. We show that the chemical potential can be gate-tuned to the CNP, and the resistance of the NW presents characteristic oscillations as functions of the gate voltage and the parallel magnetic field, manifesting the TI-sub-band physics. We further demonstrate the superconducting proximity effect in these TINWs, preparing the groundwork for future devices to investigate Majorana bound states.

Nonlinear Transport due to Magnetic-Field-Induced Flat Bands in the Nodal-Line Semimetal ZrTe_{5}.

The Dirac material ZrTe_{5} at very low carrier density was recently found to be a nodal-line semimetal, where ultraflat bands are expected to emerge in magnetic fields parallel to the nodal-line plane. Here, we report that in very low carrier-density samples of ZrTe_{5}, when the current and the magnetic field are both along the crystallographic a axis, the current-voltage characteristics presents a pronounced nonlinearity which tends to saturate in the ultra quantum limit. The magnetic-field dependence of the nonlinear coefficient is well explained by the Boltzmann theory for flat-band transport, and we argue that this nonlinear transport is likely due to the combined effect of flat bands and charge puddles; the latter appear due to very low carrier densities.

Gigantic Magnetochiral Anisotropy in the Topological Semimetal ZrTe_{5}.

Topological materials with broken inversion symmetry can give rise to nonreciprocal responses, such as the current rectification controlled by magnetic fields via magnetochiral anisotropy. Bulk nonreciprocal responses usually stem from relativistic corrections and are always very small. Here we report our discovery that ZrTe_{5} crystals in proximity to a topological quantum phase transition present gigantic magnetochiral anisotropy, which is the largest ever observed to date. We argue that a very low carrier density, inhomogeneities, and a torus-shaped Fermi surface induced by breaking of inversion symmetry in a Dirac material are central to explain this extraordinary property.

Two-Dimensional-Dirac Surface States and Bulk Gap Probed via Quantum Capacitance in a Three-Dimensional Topological Insulator.

BiSbTeSe2 is a 3D topological insulator (3D-TI) with Dirac type surface states and low bulk carrier density, as donors and acceptors compensate each other. Dominating low-temperature surface transport in this material is heralded by Shubnikov-de Haas oscillations and the quantum Hall effect. Here, we experimentally probe and model the electronic density of states (DOS) in thin layers of BiSbTeSe2 by capacitance experiments both without and in quantizing magnetic fields. By probing the lowest Landau levels, we show that a large fraction of the electrons filled via field effect into the system ends up in (localized) bulk states and appears as a background DOS. The surprisingly strong temperature dependence of such background DOS can be traced back to Coulomb interactions. Our results point at the coexistence and intimate coupling of Dirac surface states with a bulk many-body phase (a Coulomb glass) in 3D-TIs.

Nanomosaic of Topological Dirac States on the Surface of Pb5Bi24Se41 Observed by Nano-ARPES.

We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41, which is a member of the (PbSe)5(Bi2Se3)3 m homologous series (PSBS) with m = 4 consisting of alternate stacking of the topologically trivial insulator PbSe bilayer and four quintuple layers (QLs) of the topological insulator Bi2Se3. This allows us to visualize a mosaic of topological Dirac states at a nanometer scale coming from the variable thickness of the Bi2Se3 nanoislands (1-3 QLs) that remain on top of the PbSe layer after cleaving the PSBS crystal, because the local band structure of topological origin changes drastically with the thickness of the Bi2Se3 nanoislands. A comparison of the local band structure with that in ultrathin Bi2Se3 films on Si(111) gives us further insights into the nature of the observed topological states. This result demonstrates that nano-ARPES is a very useful tool for characterizing topological heterostructures.

Observation of Chiral Fermions with a Large Topological Charge and Associated Fermi-Arc Surface States in CoSi.

Topological semimetals materialize a new state of quantum matter where massless fermions protected by a specific crystal symmetry host exotic quantum phenomena. Distinct from well-known Dirac and Weyl fermions, structurally chiral topological semimetals are predicted to host new types of massless fermions characterized by a large topological charge, whereas such exotic fermions are yet to be experimentally established. Here, by using angle-resolved photoemission spectroscopy, we experimentally demonstrate that a transition-metal silicide CoSi hosts two types of chiral topological fermions, a spin-1 chiral fermion and a double Weyl fermion, in the center and corner of the bulk Brillouin zone, respectively. Intriguingly, we found that the bulk Fermi surfaces are purely composed of the energy bands related to these fermions. We also find the surface states connecting the Fermi surfaces associated with these fermions, suggesting the existence of the predicted Fermi-arc surface states. Our result provides the first experimental evidence for the chiral topological fermions beyond Dirac and Weyl fermions in condensed-matter systems, and paves the pathway toward realizing exotic electronic properties associated with unconventional chiral fermions.

Anomalous Fraunhofer Patterns in Gated Josephson Junctions Based on the Bulk-Insulating Topological Insulator BiSbTeSe2.

One-dimensional Majorana modes are predicated to form in Josephson junctions based on three-dimensional topological insulators (TIs). While observations of supercurrents in Josephson junctions made on bulk-insulating TI samples have been reported recently, the Fraunhofer patters observed in such TI-based Josephson junctions, which sometimes present anomalous features, are still not well-understood. Here, we report our study of highly gate-tunable TI-based Josephson junctions made of one of the most bulk-insulating TI materials, BiSbTeSe2, and Al. The Fermi level can be tuned by gating across the Dirac point, and the high transparency of the Al-BiSbTeSe2 interface is evinced by a high characteristic voltage and multiple Andreev reflections, with peak indices reaching 12. Anomalous Fraunhofer patterns with missing lobes were observed in the entire range of gate voltage. We found that, by employing an advanced fitting procedure to use the maximum entropy method in a Monte Carlo algorithm, the anomalous Fraunhofer patterns are explained as a result of inhomogeneous supercurrent distributions on the TI surface in the junction. Besides establishing a highly promising fabrication technology, this work clarifies one of the important open issues regarding TI-based Josephson junctions.

Observation of Room-Temperature Photoluminescence Blinking in Armchair-Edge Graphene Nanoribbons.

By enhancing the photoluminescence from aligned seven-atom wide armchair-edge graphene nanoribbons using plasmonic nanoantennas, we are able to observe blinking of the emission. The on- and off-times of the blinking follow power law statistics. In time-resolved spectra, we observe spectral diffusion. These findings together are a strong indication of the emission originating from a single quantum emitter. The room temperature photoluminescence displays a narrow spectral width of less than 50 meV, which is significantly smaller than the previously observed ensemble line width of 0.8 eV. From spectral time traces, we identify three optical transitions, which are energetically situated below the lowest bulk excitonic state E11 of the nanoribbons. We attribute the emission to transitions involving Tamm states localized at the end of the nanoribbon. The photoluminescence from a single ribbon is strongly enhanced when its end is in the antenna hot spot resulting in the observed single molecule characteristics of the emission. Our findings illustrate the essential role of the end termination of graphene nanoribbons in light emission and allow us to construct a model for photoluminescence from nanoribbons.

Topological superconductors: a review.

This review elaborates pedagogically on the fundamental concept, basic theory, expected properties, and materials realizations of topological superconductors. The relation between topological superconductivity and Majorana fermions are explained, and the difference between dispersive Majorana fermions and a localized Majorana zero mode is emphasized. A variety of routes to topological superconductivity are explained with an emphasis on the roles of spin-orbit coupling. Present experimental situations and possible signatures of topological superconductivity are summarized with an emphasis on intrinsic topological superconductors.

Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi(1.5)Sb(0.5)Te(1.7)Se(1.3).

We detected the spin polarization due to charge flow in the spin nondegenerate surface state of a three-dimensional topological insulator by means of an all-electrical method. The charge current in the bulk-insulating topological insulator Bi1.5Sb0.5Te1.7Se1.3 (BSTS) was injected/extracted through a ferromagnetic electrode made of Ni80Fe20, and an unusual current-direction-dependent magnetoresistance gave evidence for the appearance of spin polarization, which leads to a spin-dependent resistance at the BSTS/Ni80Fe20 interface. In contrast, our control experiment on Bi2Se3 gave null result. These observations demonstrate the importance of the Fermi-level control for the electrical detection of the spin polarization in topological insulators.

Spin-electricity conversion induced by spin injection into topological insulators.

We report successful spin injection into the surface states of topological insulators by using a spin pumping technique. By measuring the voltage that shows up across the samples as a result of spin pumping, we demonstrate that a spin-electricity conversion effect takes place in the surface states of bulk-insulating topological insulators Bi(1.5)Sb(0.5)Te(1.7)Se(1.3) and Sn-doped Bi(2)Te(2)Se. In this process, the injected spins are converted into a charge current along the Hall direction due to the spin-momentum locking on the surface state.

Robust protection from backscattering in the topological insulator Bi1.5Sb0.5Te1.7Se1.3.

Electron scattering in the topological surface state (TSS) of the topological insulator Bi1.5Sb0.5Te1.7Se1.3 was studied using quasiparticle interference observed by scanning tunneling microscopy. It was found that not only the 180° backscattering but also a wide range of backscattering angles of 100°-180° are effectively prohibited in the TSS. This conclusion was obtained by comparing the observed scattering vectors with the diameters of the constant-energy contours of the TSS, which were measured for both occupied and unoccupied states using time- and angle-resolved photoemission spectroscopy. The robust protection from backscattering in the TSS is good news for applications, but it poses a challenge to the theoretical understanding of the transport in the TSS.

Selective-Area Epitaxy of Bulk-Insulating (BixSb1-x)2Te3 Films and Nanowires by Molecular Beam Epitaxy.

Selective-area epitaxy (SAE) is a useful technique to grow epitaxial films with a desired shape on a prepatterned substrate. Although SAE of patterned topological-insulator (TI) thin films has been performed in the past, there has been no report of SAE-grown TI structures that are bulk-insulating. Here we report the successful growth of Hall-bars and nanowires of bulk-insulating TIs using the SAE technique. Their transport properties show that the quality of the selectively grown structures is comparable to that of bulk-insulating TI films grown on pristine substrates. In SAE-grown TI nanowires, we were able to observe Aharonov-Bohm-like magnetoresistance oscillations that are characteristic of the quantum-confined topological surface states. The availability of bulk-insulating TI nanostructures via the SAE technique opens the possibility to fabricate intricate topological devices in a scalable manner.

Atomic Diffusion-Induced Polarization and Superconductivity in Topological Insulator-Based Heterostructures.

The proximity effect at a highly transparent interface of an s-wave superconductor (S) and a topological insulator (TI) provides a promising platform to create Majorana zero modes in artificially designed heterostructures. However, structural and chemical issues pertinent to such interfaces have been poorly explored so far. Here, we report the discovery of Pd diffusion-induced polarization at interfaces between superconductive Pd1+x(Bi0.4Te0.6)2 (xPBT, 0 ≤ x ≤ 1) and Pd-intercalated Bi2Te3 by using atomic-resolution scanning transmission electron microscopy. Our quantitative image analysis reveals that nanoscale lattice strain and QL polarity synergistically suppress and promote Pd diffusion at the normal and parallel interfaces, formed between Te-Pd-Bi triple layers (TLs) and Te-Bi-Te-Bi-Te quintuple layers (QLs), respectively. Further, our first-principles calculations unveil that the superconductivity of the xPBT phase and topological nature of the Pd-intercalated Bi2Te3 phase are robust against the broken inversion symmetry. These findings point out the necessity of considering the coexistence of electric polarization with superconductivity and topology in such S-TI systems.

Observation of Josephson harmonics in tunnel junctions.

Approaches to developing large-scale superconducting quantum processors must cope with the numerous microscopic degrees of freedom that are ubiquitous in solid-state devices. State-of-the-art superconducting qubits employ aluminium oxide (AlOx) tunnel Josephson junctions as the sources of nonlinearity necessary to perform quantum operations. Analyses of these junctions typically assume an idealized, purely sinusoidal current-phase relation. However, this relation is expected to hold only in the limit of vanishingly low-transparency channels in the AlOx barrier. Here we show that the standard current-phase relation fails to accurately describe the energy spectra of transmon artificial atoms across various samples and laboratories. Instead, a mesoscopic model of tunnelling through an inhomogeneous AlOx barrier predicts percent-level contributions from higher Josephson harmonics. By including these in the transmon Hamiltonian, we obtain orders of magnitude better agreement between the computed and measured energy spectra. The presence and impact of Josephson harmonics has important implications for developing AlOx-based quantum technologies including quantum computers and parametric amplifiers. As an example, we show that engineered Josephson harmonics can reduce the charge dispersion and associated errors in transmon qubits by an order of magnitude while preserving their anharmonicity.

Fermiology of the strongly spin-orbit coupled superconductor Sn(1-x)In(x)Te: implications for topological superconductivity.

We have performed angle-resolved photoemission spectroscopy on the strongly spin-orbit coupled low-carrier density superconductor Sn(1-x)In(x)Te (x = 0.045) to elucidate the electronic states relevant to the possible occurrence of topological superconductivity, as recently reported for this compound based on point-contact spectroscopy. The obtained energy-band structure reveals a small holelike Fermi surface centered at the L point of the bulk Brillouin zone, together with a signature of a topological surface state, indicating that this material is a doped topological crystalline insulator characterized by band inversion and mirror symmetry. A comparison of the electronic states with a band-noninverted superconductor possessing a similar Fermi surface structure, Pb(1-x)Tl(x)Te, suggests that the anomalous behavior in the superconducting state of Sn(1-x)In(x)Te is related to the peculiar orbital characteristics of the bulk valence band and/or the presence of a topological surface state.

Anomalous dressing of Dirac fermions in the topological surface state of Bi2Se3, Bi2Te3, and Cu-doped Bi2Se3.

Quasiparticle dynamics on the topological surface state of Bi(2(3), Bi(2)Te(3), and superconducting Cu(x)Bi(2)Se(3) are studied by 7 eV laser-based angle resolved photoemission spectroscopy. We find strong mode couplings in the Dirac-cone surface states at energies of ~3 and ~15-20 meV associated with an exceptionally large coupling constant λ of ~3, which is one of the strongest ever reported for any material. This result is compatible with the recent observation of a strong Kohn anomaly in the surface phonon dispersion of Bi(2)Se(3), but it appears that the theoretically proposed "spin-plasmon" excitations realized in helical metals are also playing an important role. Intriguingly, the ~3 meV mode coupling is found to be enhanced in the superconducting state of Cu(x)Bi(2)Se(3).

Visualizing pair formation on the atomic scale in the high-Tc superconductor Bi2Sr2CaCu2O8+delta.

Pairing of electrons in conventional superconductors occurs at the superconducting transition temperature T(c), creating an energy gap Delta in the electronic density of states (DOS). In the high-T(c) superconductors, a partial gap in the DOS exists for a range of temperatures above T(c) (ref. 2). A key question is whether the gap in the DOS above T(c) is associated with pairing, and what determines the temperature at which incoherent pairs form. Here we report the first spatially resolved measurements of gap formation in a high-T(c) superconductor, measured on Bi2Sr2CaCu2O8+delta samples with different T(c) values (hole concentration of 0.12 to 0.22) using scanning tunnelling microscopy. Over a wide range of doping from 0.16 to 0.22 we find that pairing gaps nucleate in nanoscale regions above T(c). These regions proliferate as the temperature is lowered, resulting in a spatial distribution of gap sizes in the superconducting state. Despite the inhomogeneity, we find that every pairing gap develops locally at a temperature T(p), following the relation 2Delta/k(B)T(p) = 7.9 +/- 0.5. At very low doping (< or =0.14), systematic changes in the DOS indicate the presence of another phenomenon, which is unrelated and perhaps competes with electron pairing. Our observation of nanometre-sized pairing regions provides the missing microscopic basis for understanding recent reports of fluctuating superconducting response above T(c) in hole-doped high-T(c) copper oxide superconductors.

Antiferromagnetic topological insulator with selectively gapped Dirac cones.

Antiferromagnetic (AF) topological materials offer a fertile ground to explore a variety of quantum phenomena such as axion magnetoelectric dynamics and chiral Majorana fermions. To realize such intriguing states, it is essential to establish a direct link between electronic states and topology in the AF phase, whereas this has been challenging because of the lack of a suitable materials platform. Here we report the experimental realization of the AF topological-insulator phase in NdBi. By using micro-focused angle-resolved photoemission spectroscopy, we discovered contrasting surface electronic states for two types of AF domains; the surface having the out-of-plane component in the AF-ordering vector displays Dirac-cone states with a gigantic energy gap, whereas the surface parallel to the AF-ordering vector hosts gapless Dirac states despite the time-reversal-symmetry breaking. The present results establish an essential role of combined symmetry to protect massless Dirac fermions under the presence of AF order and widen opportunities to realize exotic phenomena utilizing AF topological materials.

Manifestation of topological protection in transport properties of epitaxial Bi2Se3 thin films.

The massless Dirac fermions residing on the surface of three-dimensional topological insulators are protected from backscattering and cannot be localized by disorder, but such protection can be lifted in ultrathin films when the three-dimensionality is lost. By measuring the Shubnikov-de Haas oscillations in a series of high-quality Bi2Se3 thin films, we revealed a systematic evolution of the surface conductance as a function of thickness and found a striking manifestation of the topological protection: The metallic surface transport abruptly diminishes below the critical thickness of ~6 nm, at which an energy gap opens in the surface state and the Dirac fermions become massive. At the same time, the weak antilocalization behavior is found to weaken in the gapped phase due to the loss of π Berry phase.