Pesquisa | BVS Doenças Infecciosas e Parasitárias

1.

High-Performance Complementary Circuits from Two-Dimensional MoTe₂.

Cai, Jun; Sun, Zheng; Wu, Peng; Tripathi, Rahul; Lan, Hao-Yu; Kong, Jing; Chen, Zhihong; Appenzeller, Joerg.

Nano Lett ; 23(23): 10939-10945, 2023 Dec 13.

Artigo em Inglês | MEDLINE | ID: mdl-37976291

2.

Mobility Extraction in 2D Transition Metal Dichalcogenide Devices-Avoiding Contact Resistance Implicated Overestimation.

Pang, Chin-Sheng; Zhou, Ruiping; Liu, Xiangkai; Wu, Peng; Hung, Terry Y T; Guo, Shiqi; Zaghloul, Mona E; Krylyuk, Sergiy; Davydov, Albert V; Appenzeller, Joerg; Chen, Zhihong.

Small ; 17(28): e2100940, 2021 Jul.

Artigo em Inglês | MEDLINE | ID: mdl-34110675

3.

Electric-field induced structural transition in vertical MoTe₂- and Mo_1-xW_xTe₂-based resistive memories.

Zhang, Feng; Zhang, Huairuo; Krylyuk, Sergiy; Milligan, Cory A; Zhu, Yuqi; Zemlyanov, Dmitry Y; Bendersky, Leonid A; Burton, Benjamin P; Davydov, Albert V; Appenzeller, Joerg.

Nat Mater ; 18(1): 55-61, 2019 01.

Artigo em Inglês | MEDLINE | ID: mdl-30542093

4.

Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions.

Zhou, Ruiping; Ostwal, Vaibhav; Appenzeller, Joerg.

Nano Lett ; 17(8): 4787-4792, 2017 08 09.

Artigo em Inglês | MEDLINE | ID: mdl-28718653

5.

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

Azcatl, Angelica; Qin, Xiaoye; Prakash, Abhijith; Zhang, Chenxi; Cheng, Lanxia; Wang, Qingxiao; Lu, Ning; Kim, Moon J; Kim, Jiyoung; Cho, Kyeongjae; Addou, Rafik; Hinkle, Christopher L; Appenzeller, Joerg; Wallace, Robert M.

Nano Lett ; 16(9): 5437-43, 2016 09 14.

Artigo em Inglês | MEDLINE | ID: mdl-27494551

6.

Tunability of short-channel effects in MoS2 field-effect devices.

Zhang, Feng; Appenzeller, Joerg.

Nano Lett ; 15(1): 301-6, 2015 Jan 14.

Artigo em Inglês | MEDLINE | ID: mdl-25545046

7.

Where does the current flow in two-dimensional layered systems?

Das, Saptarshi; Appenzeller, Joerg.

Nano Lett ; 13(7): 3396-402, 2013 Jul 10.

Artigo em Inglês | MEDLINE | ID: mdl-23802773

8.

Utilizing the unique properties of nanowire MOSFETs for RF applications.

Razavieh, Ali; Mehrotra, Saumitra; Singh, Navab; Klimeck, Gerhard; Janes, David; Appenzeller, Joerg.

Nano Lett ; 13(4): 1549-54, 2013 Apr 10.

Artigo em Inglês | MEDLINE | ID: mdl-23464859

9.

High performance multilayer MoS2 transistors with scandium contacts.

Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma; Appenzeller, Joerg.

Nano Lett ; 13(1): 100-5, 2013 Jan 09.

Artigo em Inglês | MEDLINE | ID: mdl-23240655

10.

Spin transfer torque in a graphene lateral spin valve assisted by an external magnetic field.

Lin, Chia-Ching; Penumatcha, Ashish Verma; Gao, Yunfei; Diep, Vinh Quang; Appenzeller, Joerg; Chen, Zhihong.

Nano Lett ; 13(11): 5177-81, 2013 Nov 13.

Artigo em Inglês | MEDLINE | ID: mdl-24127734

11.

Experimental demonstration of an on-chip p-bit core based on stochastic magnetic tunnel junctions and 2D MoS₂ transistors.

Daniel, John; Sun, Zheng; Zhang, Xuejian; Tan, Yuanqiu; Dilley, Neil; Chen, Zhihong; Appenzeller, Joerg.

Nat Commun ; 15(1): 4098, 2024 May 15.

Artigo em Inglês | MEDLINE | ID: mdl-38750065

12.

Tailoring amorphous boron nitride for high-performance two-dimensional electronics.

Chen, Cindy Y; Sun, Zheng; Torsi, Riccardo; Wang, Ke; Kachian, Jessica; Liu, Bangzhi; Rayner, Gilbert B; Chen, Zhihong; Appenzeller, Joerg; Lin, Yu-Chuan; Robinson, Joshua A.

Nat Commun ; 15(1): 4016, 2024 May 13.

Artigo em Inglês | MEDLINE | ID: mdl-38740890

13.

Graphene-based frequency tripler.

Chen, Hong-Yan; Appenzeller, Joerg.

Nano Lett ; 12(4): 2067-70, 2012 Apr 11.

Artigo em Inglês | MEDLINE | ID: mdl-22452648

14.

Observation of 1D behavior in Si nanowires: toward high-performance TFETs.

Salazar, Ramon B; Mehrotra, Saumitra R; Klimeck, Gerhard; Singh, Navab; Appenzeller, Joerg.

Nano Lett ; 12(11): 5571-5, 2012 Nov 14.

Artigo em Inglês | MEDLINE | ID: mdl-23030672

15.

Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors.

Zhao, Yanjie; Candebat, Drew; Delker, Collin; Zi, Yunlong; Janes, David; Appenzeller, Joerg; Yang, Chen.

Nano Lett ; 12(10): 5331-6, 2012 Oct 10.

Artigo em Inglês | MEDLINE | ID: mdl-22950905

16.

Synthesis of antimony-based nanowires using the simple vapor deposition method.

Zi, Yunlong; Zhao, Yanjie; Candebat, Drew; Appenzeller, Joerg; Yang, Chen.

Chemphyschem ; 13(10): 2585-8, 2012 Jul 16.

Artigo em Inglês | MEDLINE | ID: mdl-22438329

17.

FeTRAM. An organic ferroelectric material based novel random access memory cell.

Das, Saptarshi; Appenzeller, Joerg.

Nano Lett ; 11(9): 4003-7, 2011 Sep 14.

Artigo em Inglês | MEDLINE | ID: mdl-21859101

18.

Transport modulation in Ge/Si core/shell nanowires through controlled synthesis of doped Si shells.

Zhao, Yanjie; Smith, Joshua T; Appenzeller, Joerg; Yang, Chen.

Nano Lett ; 11(4): 1406-11, 2011 Apr 13.

Artigo em Inglês | MEDLINE | ID: mdl-21417251

19.

Signatures of disorder in the minimum conductivity of graphene.

Sui, Yang; Low, Tony; Lundstrom, Mark; Appenzeller, Joerg.

Nano Lett ; 11(3): 1319-22, 2011 Mar 09.

Artigo em Inglês | MEDLINE | ID: mdl-21329334

20.

Statistical Assessment of High-Performance Scaled Double-Gate Transistors from Monolayer WS₂.

Sun, Zheng; Pang, Chin-Sheng; Wu, Peng; Hung, Terry Y T; Li, Ming-Yang; Liew, San Lin; Cheng, Chao-Ching; Wang, Han; Wong, H-S Philip; Li, Lain-Jong; Radu, Iuliana; Chen, Zhihong; Appenzeller, Joerg.

ACS Nano ; 16(9): 14942-14950, 2022 Sep 27.

Artigo em Inglês | MEDLINE | ID: mdl-36094410

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