Tailoring Single-Electron Emission Distributions in the Time-Energy Phase Space.

The precise characterization and control of single-electron wave functions emitted from a single-electron source are essential for advancing electron quantum optics. Here, we introduce a method for tailoring a single-electron emission distribution using energy filtering, enabling selective control of the distribution under various energy barrier conditions of the filter. The tailored electron is studied by reconstructing its Wigner distribution in the time-energy phase space using the continuous-variable tomography method. Our results reveal that the filtering cuts the portion of the distribution below the energy-barrier height of the filter in the time-energy space. While the filtering is demonstrated in a classical regime of the emitted electrons, we expect that this study significantly contributes to the design and implementation of advanced experiments toward quantum information processing based on single electrons.

One-Lead Single-Electron Source with Charging Energy.

Single-electron sources, formed by a quantum dot (QD), are key elements for realizing electron analogue of quantum optics. We develop a new type of single-electron source with functionalities that are absent in existing sources. This source couples with only one lead. By an AC rf drive, it successively emits holes and electrons cotraveling in the lead, as in the mesoscopic capacitor. Thanks to the considerable charging energy of the QD, however, emitted electrons have energy levels a few tens of millielectronvolts above the Fermi level, so that emitted holes and electrons are split by a potential barrier on demand, resulting in a rectified quantized current. The resulting pump map exhibits quantized triangular islands, in good agreement with our theory. We also demonstrate that the source can be operated with another tunable-barrier single-electron source in a series double QD geometry, showing parallel electron pumping by a common gate driving.

Gate-tunable quantum dot formation between localized-resonant states in a few-layer MoS2.

We demonstrate a gate-tunable quantum dot (QD) located between two potential barriers defined in a few-layer MoS2. Although both local gates used to tune the potential barriers have disorder-induced QDs, we observe diagonal current stripes in current resonant islands formed by the alignment of the Fermi levels of the electrodes and the energy levels of the disorder-induced QDs, as evidence of the gate-tunable QD. We demonstrate that the charging energy of the designed QD can be tuned in the range of 2-6 meV by changing the local-gate voltages in ∼1 V.

Tunneling Spectroscopy for Electronic Bands in Multi-Walled Carbon Nanotubes with Van Der Waals Gap.

Various intriguing quantum transport measurements for carbon nanotubes (CNTs) based on their unique electronic band structures have been performed adopting a field-effect transistor (FET), where the contact resistance represents the interaction between the one-dimensional and three-dimensional systems. Recently, van der Waals (vdW) gap tunneling spectroscopy for single-walled CNTs with indium-metal contacts was performed adopting an FET device, providing the direct assignment of the subband location in terms of the current-voltage characteristic. Here, we extend the vdW gap tunneling spectroscopy to multi-walled CNTs, which provides transport spectroscopy in a tunneling regime of ~1 eV, directly reflecting the electronic density of states. This new quantum transport regime may allow the development of novel quantum devices by selective electron (or hole) injection to specific subbands.

Ultrafast Graphene Light Emitters.

Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge-carrier dynamics in graphene and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460% enhancement compared to the gray-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2000 K under ambient conditions as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes under electrical excitation. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.

Role of Remote Interfacial Phonon (RIP) Scattering in Heat Transport Across Graphene/SiO2 Interfaces.

Heat transfer across interfaces of graphene and polar dielectrics (e.g., SiO2) could be mediated by direct phonon coupling, as well as electronic coupling with remote interfacial phonons (RIPs). To understand the relative contribution of each component, we develop a new pump-probe technique called voltage-modulated thermoreflectance (VMTR) to accurately measure the change of interfacial thermal conductance under an electrostatic field. We employed VMTR on top gates of graphene field-effect transistors and find that the thermal conductance of SiO2/graphene/SiO2 interfaces increases by up to ΔG ≈ 0.8 MW m-2 K-1 under electrostatic fields of <0.2 V nm-1. We propose two possible explanations for the small observed ΔG. First, because the applied electrostatic field induces charge carriers in graphene, our VMTR measurements could originate from heat transfer between the charge carriers in graphene and RIPs in SiO2. Second, the increase in heat conduction could be caused by better conformity of graphene interfaces under electrostatic pressure exerted by the induced charge carriers. Regardless of the origins of the observed ΔG, our VMTR measurements establish an upper limit for heat transfer from unbiased graphene to SiO2 substrates via RIP scattering; for example, only <2% of the interfacial heat transport is facilitated by RIP scattering even at a carrier concentration of ∼4 × 1012 cm-2.

Electrical and Thermoelectric Transport by Variable Range Hopping in Thin Black Phosphorus Devices.

The moderate band gap of black phosphorus (BP) in the range of 0.3-2 eV, along a high mobility of a few hundred cm(2) V(-1) s(-1) provides a bridge between the gapless graphene and relatively low-mobility transition metal dichalcogenides. Here, we study the mechanism of electrical and thermoelectric transport in 10-30 nm thick BP devices by measurements of electrical conductance and thermopower (S) with various temperatures (T) and gate-electric fields. The T dependences of S and the sheet conductance (σ□) of the BP devices show behaviors of T(1/3) and exp[-(1/T)(1/3)], respectively, where S reaches ∼0.4 mV/K near room T. This result indicates that two-dimensional (2D) Mott's variable range hopping (VRH) is a dominant mechanism in the thermoelectric and electrical transport in our examined thin BP devices. We consider the origin of the 2D Mott's VRH transport in our BPs as trapped charges at the surface of the underlying SiO2 based on the analysis with observed multiple quantum dots.

Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation.

For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show that tensile strain decreases bulk carrier density while accentuating transport of topological surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy and density functional theory calculations. The induced strain was confirmed by transmittance X-ray scattering measurements. The results show the possibility of reversible topological surface state device control using structural deformation.

Tunable double and triple quantum dots in carbon nanotube with local side gates.

We demonstrate a simple but efficient design for forming tunable single, double and triple quantum dots (QDs) in a sub-µm-long carbon nanotube (CNT) with two major features that distinguish this design from that of traditional CNT QDs: the use of i) Al2Ox tunnelling barriers between the CNT and metal contacts and ii) local side gates for controlling both the height of the potential barrier and the electron-confining potential profile to define multiple QDs. In a serial triple QD, in particular, we find that a stable molecular coupling state exists between two distant outer QDs. This state manifests in anti-crossing charging lines that correspond to electron and hole triple points for the outer QDs. The observed results are also reproduced in calculations based on a capacitive interaction model with reasonable configurations of electrons in the QDs. Our design using artificial tunnel contacts and local side gates provides a simple means of creating multiple QDs in CNTs for future quantum-engineering applications.

Self-aligned nanotube-nanowire phase change memory.

A central issue of nanoelectronics concerns their fundamental scaling limits, that is, the smallest and most energy-efficient devices that can function reliably. Unlike charge-based electronics that are prone to leakage at nanoscale dimensions, memory devices based on phase change materials (PCMs) are more scalable, storing digital information as the crystalline or amorphous state of a material. Here, we describe a novel approach to self-align PCM nanowires with individual carbon nanotube (CNT) electrodes for the first time. The highly scaled and spatially confined memory devices approach the ultimate scaling limits of PCM technology, achieving ultralow programming currents (~0.1 µA set, ~1.6 µA reset), outstanding on/off ratios (~10(3)), and improved endurance and stability at few-nanometer bit dimensions. In addition, the powerful yet simple nanofabrication approach described here can enable confining and probing many other nanoscale and molecular devices self-aligned with CNT electrodes.

Transport measurement of Andreev bound states in a Kondo-correlated quantum dot.

We report nonequilibrium transport measurements of gate-tunable Andreev bound states in a carbon nanotube quantum dot coupled to two superconducting leads. In particular, we observe clear features of two types of Kondo ridges, which can be understood in terms of the interplay between the Kondo effect and superconductivity. In the first type (type I), the coupling is strong and the Kondo effect is dominant. Levels of the Andreev bound states display anticrossing in the middle of the ridge. On the other hand, crossing of the two Andreev bound states is shown in the second type (type II) together with the 0-π transition of the Josephson junction. Our scenario is well understood in terms of only a single dimensionless parameter, k(B)T(K)(min)/Δ, where T(K)(min) and Δ are the minimum Kondo temperature of a ridge and the superconducting order parameter, respectively. Our observation is consistent with measurements of the critical current, and is supported by numerical renormalization group calculations.

Transport in nanoribbon interconnects obtained from graphene grown by chemical vapor deposition.

We study graphene nanoribbon (GNR) interconnects obtained from graphene grown by chemical vapor deposition (CVD). We report low- and high-field electrical measurements over a wide temperature range, from 1.7 to 900 K. Room temperature mobilities range from 100 to 500 cm(2)·V(-1)·s(-1), comparable to GNRs from exfoliated graphene, suggesting that bulk defects or grain boundaries play little role in devices smaller than the CVD graphene crystallite size. At high-field, peak current densities are limited by Joule heating, but a small amount of thermal engineering allows us to reach ∼2 × 10(9) A/cm(2), the highest reported for nanoscale CVD graphene interconnects. At temperatures below ∼5 K, short GNRs act as quantum dots with dimensions comparable to their lengths, highlighting the role of metal contacts in limiting transport. Our study illustrates opportunities for CVD-grown GNRs, while revealing variability and contacts as remaining future challenges.

Quantum interference probed by the thermovoltage in Sb-doped Bi2Se3 nanowires.

The magnetic-flux-dependent dispersions of sub-bands in topologically protected surface states of a topological insulator nanowire manifest as Aharonov-Bohm oscillations (ABOs) observed in conductance measurements, reflecting the Berry's phase of π because of the spin-helical surface states. Here, we used thermoelectric measurements to probe a variation in the density of states at the Fermi level of the surface state of a topological insulator nanowire (Sb-doped Bi2Se3) under external magnetic fields and an applied gate voltage. The ABOs observed in the magnetothermovoltage showed 180° out-of-phase oscillations depending on the gate voltage values, which can be used to tune the Fermi wave number and the density of states at the Fermi level. The temperature dependence of the ABO amplitudes showed that the phase coherence was kept to T = 15 K. We suggest that thermoelectric measurements could be applied for investigating the electronic structure at the Fermi level in various quantum materials.

Stretchable, transparent graphene interconnects for arrays of microscale inorganic light emitting diodes on rubber substrates.

This paper describes the fabrication and design principles for using transparent graphene interconnects in stretchable arrays of microscale inorganic light emitting diodes (LEDs) on rubber substrates. We demonstrate several appealing properties of graphene for this purpose, including its ability to spontaneously conform to significant surface topography, in a manner that yields effective contacts even to deep, recessed device regions. Mechanics modeling reveals the fundamental aspects of this process, as well as the use of the same layers of graphene for interconnects designed to accommodate strains of 100% or more, in a completely reversible fashion. These attributes are compatible with conventional thin film processing and can yield high-performance devices in transparent layouts. Graphene interconnects possess attractive features for both existing and emerging applications of LEDs in information display, biomedical systems, and other environments.

Gate-voltage-induced reversible electrical phase transitions in Mo0.67W0.33Se2 devices.

Tunable electrical phase transitions based on the structural and quantum-state phase transitions in two-dimensional transition-metal dichalcogenides have attracted attention in both semiconducting electronics and quantum electronics applications. Here, we report gate-voltage-induced reversible electrical phase transitions in Mo0.67W0.33Se2 (MoWSe) field-effect transistors prepared on SiO2/Si substrates. In gate-induced depletion regions of the 2H phase, an electrical current resumes flow at 150 K < T < 200 K with decreasing T irrespective of the layer number (n) for MoWSe when n < 20. The newly appearing electron-doped-type conducting channel again enters the 2H-phase region when the back-gate voltage increases, accompanied by the negative differential transconductance for four-layer and monolayer devices or by a deflection point in the transfer curves for a multilayer device. The thermal activation energies of the new conducting and 2H-phase branches differ by one order of magnitude at the same gate voltage for both the four-layer and monolayer cases, indicating that the electrical band at the Fermi level was modified. The hysteresis measurements for the gate voltage were performed with a five-layer device, which confirms the reversible electrical transition behavior. The possible origins of the nucleated conducting phase in the depletion region of the 2H phase of MoWSe are discussed.

Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots.

We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 µm lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines.

Imaging, simulation, and electrostatic control of power dissipation in graphene devices.

We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier distributions, fields, and GFET power dissipation. The hot spot corresponds to the location of minimum charge density along the GFET; by changing the applied bias, this can be shifted between electrodes or held in the middle of the channel in ambipolar transport. Interestingly, the hot spot shape bears the imprint of the density of states in mono- vs bilayer graphene. More broadly, we find that thermal imaging combined with self-consistent simulation provide a noninvasive approach for more deeply examining transport and energy dissipation in nanoscale devices.

Heat conduction across monolayer and few-layer graphenes.

We report the thermal conductance G of Au/Ti/graphene/SiO(2) interfaces (graphene layers 1 ≤ n ≤ 10) typical of graphene transistor contacts. We find G ≈ 25 MW m(-2) K(-1) at room temperature, four times smaller than the thermal conductance of a Au/Ti/SiO(2) interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO(2) interfaces acting in series. The temperature dependence of G from 50 ≤ T ≤ 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings suggest that metal contacts can limit not only electrical transport but also thermal dissipation from submicrometer graphene devices.

Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials.

The electrical phase transition in van der Waals (vdW) layered materials such as transition-metal dichalcogenides and Bi2Sr2CaCu2O8+x (Bi-2212) high-temperature superconductor has been explored using various techniques, including scanning tunneling and photoemission spectroscopies, and measurements of electrical resistance as a function of temperature. In this study, we develop one useful method to elucidate the electrical phases in vdW layered materials: indium (In)-contacted vdW tunneling spectroscopy for 1T-TaS2, Bi-2212 and 2H-MoS2. We utilized the vdW gap formed at an In/vdW material interface as a tunnel barrier for tunneling spectroscopy. For strongly correlated electron systems such as 1T-TaS2 and Bi-2212, pronounced gap features corresponding to the Mott and superconducting gaps were respectively observed at T = 4 K. We observed a gate dependence of the amplitude of the superconducting gap, which has potential applications in a gate-tunable superconducting device with a SiO2/Si substrate. For In/10 nm-thick 2H-MoS2 devices, differential conductance shoulders at bias voltages of approximately ± 0.45 V were observed, which were attributed to the semiconducting gap. These results show that In-contacted vdW gap tunneling spectroscopy in a fashion of field-effect transistor provides feasible and reliable ways to investigate electronic structures of vdW materials.

Current-phase relationship, thermal and quantum phase slips in superconducting nanowires made on a scaffold created using adhesive tape.

Quantum phase slippage (QPS) in a superconducting nanowire is a new candidate for developing a quantum bit [Mooij et al. New J. Phys. 2005, 7, 219; Mooij et al. Nat. Phys. 2006, 2, 169; Khlebnikov http://arxiv.org/abs/quant-ph/0210019 2007]. It has also been theoretically predicted that the occurrence of QPS significantly changes the current-phase relationship (CPR) of the wire due to the tunneling between topologically different metastable states [Khlebnikov Phys. Rev. B 2008, 78, 014512]. We present studies on the microwave response of the superconducting nanowires to reveal their CPRs. First, we demonstrate a simple nanowire fabrication technique, based on commercially available adhesive tapes, which allows making thin superconducting wire from different metals. We compare the resistance vs temperature curves of Mo(76)Ge(24) and Al nanowires to the classical and quantum models of phase slips. In order to describe the experimentally observed microwave responses of these nanowires, we use the McCumber-Stewart model [McCumber J. Appl. Phys. 1968, 39, 3113; Stewart Appl. Phys. Lett. 1968, 12, 277], which is generalized to include either classical or quantum CPR.