Photoelectrochemical activity on Ga-polar and N-polar GaN surfaces for energy conversion.

Hydrogen generation through direct photoelectrolysis of water was studied using photoelectrochemical cells made of different facets of free-standing polar GaN system. To build the fundamental understanding at the differences of surface photochemistry afforded by the GaN {0001}and {000-1}polar surfaces, we correlated the relationship between the surface structure and photoelectrochemical performance on the different polar facets. The photoelectrochemical measurements clearly revealed that the Ga-polar surface had a more negative onset potential relative to the N-polar surface due to the much negative flat-band potential. At more positive applied voltages, however, the N-polar surface yielded much higher photocurrent with conversion efficiency of 0.61% compared to that of 0.55% by using the Ga-polar surface. The reason could be attributed to the variation in the band structure of the different polar facets via Mott-Schottky analyses. Based on this work, understanding the facet effect on photoelectrochemical activity can provide a blueprint for the design of materials in solar hydrogen applications.

Growth of ß-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation.

Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.

Symmetry groups of single-wall nanotubes.

This work investigates the symmetry properties of single-wall carbon nanotubes and their structural analogs, which are nanotubes consisting of different kinds of atoms. The symmetry group of a nanotube is studied by looking at symmetries and color fixing symmetries associated with a coloring of the tiling by hexagons in the Euclidean plane which, when rolled, gives rise to a geometric model of the nanotube. The approach is also applied to nanotubes with non-hexagonal symmetry arising from other isogonal tilings of the plane.