Direct detection of virus-like particles using color images of plasmonic nanostructures.

We propose a measurement method for sensitive and label-free detections of virus-like particles (VLPs) using color images of nanoplasmonic sensing chips. The nanoplasmonic chip consists of 5×5 gold nanoslit arrays and the gold surface is modified with specific antibodies for spike protein. The resonant wavelength of the 430-nm-period gold nanoslit arrays underwater environment is about 570 nm which falls between the green and red bands of the color CCD. The captured VLPs by the specific antibodies shift the plasmonic resonance of the gold nanoslits. It results in an increased brightness of green pixels and decreased brightness of red pixels. The image contrast signals of (green - red) / (red + green) show good linearity with the surface particle density. The experimental tests show the image contrast method can detect 100-nm polystyrene particles with a surface density smaller than 2 particles/µm2. We demonstrate the application for direct detection of SARS-CoV-2 VLPs using a simple scanner platform. A detection limit smaller than 1 pg/mL with a detection time less than 30 minutes can be achieved.

Luminous efficiency improvement of polymer light-emitting diodes with platinum nanolayer at the PEDOT:PSS-ITO interface.

A platinum (Pt) nanolayer was successfully deposited on indium titanium oxide (ITO) as a buffer layer for polymer light-emitting diodes (PLEDs) using a rapid and low-cost sputtering system at room temperature. With a 5 s Pt-dispersed ITO as the anode window substrate of the PLED, a maximum current efficiency of 4.00 cd/A was realized, which is notably higher than that of a typical PLED (1.13 cd/A). It was determined that the average current efficiency and electroluminescence intensity of the proposed PLED were enhanced by 2.5 times and 290%, respectively, compared to a typical PLED.

Polymer LEDs with improved efficacy via periodic nanostructure-based aluminum.

Periodic aluminum-capped nanoslit arrays were produced on a polycarbonate plastic substrate by rapid hot embossing nanoimprint lithography and thermal evaporation, and they were used as a transparent window for blue-emitting polymer light-emitting diodes (PLEDs). The external quantum efficiency of blue-emitting PLEDs was enhanced by the surface plasmon polaritons of the periodic aluminum-capped nanoslit arrays. A maximum current efficiency of 4.84 cd/A was achieved for the proposed PLED, which was over 2.2 times that of the reference PLED (2.18 cd/A). These results demonstrate that periodic nanostructure can assist in the simple and low-cost fabrication of high-performance polymer optoelectronic devices.

Influence of the Silver Nanocrystal Shape on the Luminous Efficiency of Blue-Emitting Polymer Light-Emitting Diodes.

Truncated silver nanodecahedrons (TAgNDs) and truncated silver nanoplates (TAgNPs) fabricated via chemical reduction and photochemical methods were added to poly[3,4-ethylenedioxythiophene]:poly[styrenesulfonate] (PEDOT:PSS) as dopants to promote the luminous efficiency of blue-emitting polymer light-emitting diodes (PLEDs). The differences in shape between TAgNDs and TAgNPs result in better dispersion of TAgNDs in PEDOT:PSS. Therefore, at an optimal doping concentration (the distributed density in the light-emitting region is 6.88 µg cm-2 for TAgNDs and 5.16 µg cm-2 for TAgNPs), the average current efficacy and maximum electroluminescence intensity enhancement factor for TAgND-doped PLEDs were 4.18 cd A-1 and 420%, respectively, which are much higher than those for TAgNP-doped PLEDs (1.83 cd A-1 and 200%) at a luminescence wavelength of 440 nm.

Efficacy improvement in polymer LEDs via silver-nanoparticle doping in the emissive layer.

The coupling of surface plasmons and excitons in the emissive layer (EML) can improve the performance of polymer light-emitting diodes (PLEDs). Silver nanoparticles (Ag-NPs) with a decahedron structure are prepared by the chemical reduction and photochemical methods and doped directly into the EML after the phase-transfer process. The surface plasmon resonance effect of Ag-NPs, which makes full use of quenched excitons and increases the efficiency of excitons in the EML in a PLED, enhances the current efficacy by a factor of 75 relative to that of the undoped reference device (from 0.22 to 16.64 cd/A). These results demonstrate that Ag-NPs can assist in simple and low-cost fabrication of high-performance polymer optoelectronic devices.

InGaN light emitting diodes with a nanopipe layer formed from the GaN epitaxial layer.

A Si-heavy doped GaN:Si epitaxial layer is transformed into a directional nanopipe GaN layer through a laser-scribing process and a selectively electrochemical (EC) etching process. InGaN light-emitting diodes (LEDs) with an EC-treated nanopipe GaN layer have a high light extraction efficiency. The direction of the nanopipe structure was directed perpendicular to the laser scribing line and was guided by an external bias electric field. An InGaN LED structure with an embedded nanopipe GaN layer can enhance external quantum efficiency through a one-step epitaxial growth process and a selective EC etching process. A birefringence optical property and a low effective refractive index were observed in the directional-nanopipe GaN layer.

Effects of external light in the magnetic field-modulated photocatalytic reactions in a microfluidic chip reactor.

Photocatalytic reactions and their magnetic-field enhancement present significant potential for practical applications in green chemistry. This work presents the mutual enhancement of plasmonic photocatalytic reaction by externally applied magnetic field and plasmonic enhancement in a micro optofluidic chip reactor. The tiny gold (Au) nanoparticles of only a few atoms fixed on the surface of titanium dioxide (TiO2) nanoparticles lead to mutually boosted enhancement photocatalytic reactions under an external magnetic field and plasmonic effects. The dominant factor of adding green light to the photocatalytic reaction leads to the understanding that it is a plasmonic effect. The positive results of adding ethanol alcohol (EA) in the experiments further present that it is a hot electron dominant path photocatalytic reaction that is positively enhanced by both the external magnetic field and plasmonic effects. This work offers great potential for utilizing magnetic field enhancement in plasmonic photocatalytic reactions.

Enhanced luminescence efficiency of Ag nanoparticles dispersed on indium tin oxide for polymer light-emitting diodes.

This study presents a substantial enhancement in electroluminescence achieved by depositing Ag nanoparticles on an ITO-coated glass substrate (Ag/ITO) for approximately 10-s to form novel window materials for use in polymer light-emitting diodes (PLEDs). The PLEDs discussed herein are single-layer devices based on a poly[9,9-dioctylfluorene-co-benzothiadiazole] (F8BT) emissive layer. In addition to its low cost, this novel fabrication method can effectively increase the charge transport properties of the active layer to meet the high performance requirements of PLEDs. Due to the increased conductivity and work function of the Ag/ITO substrate, the electroluminescence intensity was increased by nearly 3.3-fold compared with that of the same PLED with a bare ITO substrate.

Enhancement of luminous efficacy of polymer light-emitting diodes with silver-nanoparticles by oxygen-plasma treatment.

Silver-nanoparticles deposited on indium tin oxide (AgNPs/ITO) with different O2 -plasma treatment times are used as the anode window substrate for polymer light-emitting diodes (PLED). When AgNPs/ITO with an O2 -plasma treatment time of 10 min is used for PLED, a maximum current efficiency of 3.33 cd/A is realized, which is notably higher than that of a reference PLED (1.00 cd/A). Compared to those of the reference PLED, the mean current efficiency and electroluminescence intensity of the optimal PLED are enhanced by 3.24 times and 480%, respectively. O2 -plasma treatment is an easy method for optimizing the localized surface plasmon resonance effect of metal nanoparticles, exhibiting advantages of scalable mass production and high suitability for applications in related optoelectronic components.

Silver-doped nickel oxide as an efficient hole-transport layer in polymer light-emitting diodes.

In this study, silver-doped nickel oxide (NiO:Ag) was successfully synthesized by a sol-gel method and spin-coated on indium titanium oxide (ITO) as a hole-transport layer for polymer light-emitting diodes (PLED). After the calcination of the NiO:Ag/ITO substrate at 300°C for 1 h, stable conductive regions and the mean work-function on the NiO:Ag/ITO surface reached 89.43% and 5.53 eV, respectively, which were greater than those on a conventional poly [3,4-ethylenedioxythiophene] polystyrene sulfonate (PEDOT:PSS)/ITO surface. When NiO:Ag (300°C)/ITO was used as an anode window substrate for PLEDs, the enhancement factor for the average current efficiency in the current-density range of 20-50 mA/cm2 and electroluminescence intensity at an applied bias of 8.0 V were 4.60 and 2.55 times, respectively, in comparison with those of PLED based on a conventional PEDOT:PSS/ITO anode. HIGHLIGHTS: NiO:Ag is synthesized by a sol-gel method and spin-coated on ITO as a HTL for PLED. NiO:Ag/ITO calcined at 300°C for 1 h has the best microscopic electrical properties. The performance for proposed PLED is much better than that for typical PLED.

Enhanced luminescence efficiency by surface plasmon coupling of Ag nanoparticles in a polymer light-emitting diode.

This study achieved a substantial enhancement in electroluminescence by coupling localized surface plasmons in a single layer of Ag nanoparticles. Thermal evaporation was used to fabricate 20-nm Ag particles sandwiched between a gallium-doped zinc oxide film and a glass substrate to form novel window materials for use in polymer light-emitting diodes (PLEDs). The PLEDs discussed herein are single-layer devices based on a poly(9,9-di-n-octyl-2,7-fluorene) (PFO) emissive layer. In addition to low cost, this novel fabrication method can effectively prevent interruption or degradation of the charge transport properties of the active layer to meet the high performance requirements of PLEDs. Due to the surface-plasmon-enhanced emission, the electroluminescence intensity was increased by nearly 1-fold, compared to that of the same PLED without the interlayer of Ag nanoparticles.

InGaN-based light-emitting diodes with an embedded conical air-voids structure.

The conical air-void structure of an InGaN light-emitting diode (LEDs) was formed at the GaN/sapphire interface to increase the light extraction efficiency. The fabrication process of the conical air-void structure consisted of a dry process and a crystallographic wet etching process on an undoped GaN layer, followed by a re-growth process for the InGaN LED structure. A higher light output power (1.54 times) and a small divergent angle (120°) were observed, at a 20 mA operation current, on the treated LED structure when compared to a standard LED without the conical air-void structure. In this electroluminescence spectrum, the emission intensity and the peak wavelength varied periodically by corresponding to the conical air-void patterns that were measured through a 100 nm-optical-aperture fiber probe. The conical air-void structure reduced the compressed strain at the GaN/sapphire interface by inducing the wavelength blueshift phenomenon and the higher internal quantum efficiency of the photoluminescence spectra for the treated LED structure.

InGaN light emitting diodes with a laser-treated tapered GaN structure.

InGaN light-emitting diode (LED) structures get an air-void structure and a tapered GaN structure at the GaN/sapphire interface through a laser decomposition process and a lateral wet etching process. The light output power of the treated LED structure had a 70% enhancement compared to a conventional LED structure at 20 mA. The intensities and peak wavelengths of the micro-photoluminescence spectra were varied periodically by aligning to the air-void (461.8nm) and the tapered GaN (459.5nm) structures. The slightly peak wavelength blueshift phenomenon of the EL and the PL spectra were caused by a partial compressed strain release at the GaN/sapphire interface when forming the tapered GaN structure. The relative internal quantum efficiency of the treated LED structure (70.3%) was slightly increased compared with a conventional LED (67.8%) caused by the reduction of the piezoelectric field in the InGaN active layer.

A multichannel color filter with the functions of optical sensor and switch.

This paper reports a multichannel color filter with the functions of optical sensor and switch. The proposed structure comprises a metal-insulator-metal (MIM) bus waveguide side-couples to six circular cavities with different sizes for filtering ultra-violet and visible lights into individual colors in the wavelength range of 350-700 nm. We used the finite element method to analyze the electromagnetic field distributions and transmittance properties by varying the structural parameters in detail. The designed plasmonic filter takes advantage of filtering out different colors since the light-matter resonance and interference between the surface plasmon polaritons (SPPs) modes within the six cavities. Results show that the designed structure can preferentially select the desired colors and confine the SPPS modes in one of the cavities. This designed structure can filter eleven color channels with a small full width at half maximum (FWHM) ~ 2 nm. Furthermore, the maximum values of sensitivity, figure of merit, quality factor, dipping strength, and extinction ratio can achieve of 700 nm/RIU, 350 1/RIU, 349.0, 65.04%, and 174.50 dB, respectively, revealing the excellent functions of sensor performance and optical switch, and offering a chance for designing a beneficial nanophotonic device.

Ultrahigh Sensitivity of a Plasmonic Pressure Sensor with a Compact Size.

This study proposes a compact plasmonic metal-insulator-metal pressure sensor comprising a bus waveguide and a resonator, including one horizontal slot and several stubs. We calculate the transmittance spectrum and the electromagnetic field distribution using the finite element method. When the resonator's top layer undergoes pressure, the resonance wavelength redshifts with increasing deformation, and their relation is nearly linear. The designed pressure sensor possesses the merits of ultrahigh sensitivity, multiple modes, and a simple structure. The maximum sensitivity and resonance wavelength shift can achieve 592.44 nm/MPa and 364 nm, respectively, which are the highest values to our knowledge. The obtained sensitivity shows 23.32 times compared to the highest one reported in the literature. The modeled design paves a promising path for applications in the nanophotonic field.

Using a slightly tapered optical fiber to attract and transport microparticles.

We exploit a fiber puller to transform a telecom single-mode optical fiber with a 125 microm diameter into a symmetric and unbroken slightly tapered optical fiber with a 50 microm diameter at the minimum waist. When the laser light is launched into the optical fiber, we can observe that, due to the evanescent wave of the slightly tapered fiber, the nearby polystyrene microparticles with 10 microm diameters will be attracted onto the fiber surface and roll separately in the direction of light propagation. We have also simulated and compared the optical propulsion effects on the microparticles when the laser light is launched into a slightly tapered fiber and a heavily tapered (subwavelength) fiber, respectively.

Nanoscale surface electrical properties of zinc oxide films investigated by conducting atomic force microscopy.

In this study, conducting atomic force microscopy was employed to investigate the nanoscale surface electrical properties of zinc oxide (ZnO) films prepared by pulsed laser deposition (PLD) at different substrate temperatures for use as anode materials in polymer light-emitting diodes. The results show that the surface conductivity distribution of ZnO is related to its surface structure. At substrate temperatures of 150-200 degrees C, the conducting regions may cover over 90% of the ZnO thin-film surface, thus providing the best local conductivity. Moreover, heating at substrate temperatures of above 250 degrees C can effectively make the conductivity on the ZnO surface uniform. In particular, at substrate temperatures of around 300 degrees C, the conducting regions where currents are between 1 and 2 muA may cover as much as 83% of the surface, and furthermore, the transmission ratio in the visible range is higher than 80%. This is a rather ideal production temperature for the PLD for ZnO films.

Rapid and accurate measurement for phase-change optical recording bits.

Conducting atomic force microscopy (CAFM) and scanning surface potential microscopy (SSPM) have been used to image the phase-change optical recording bits. Commercially available digital versatile discs (DVD) + rewritable (RW) with initialization process were measured in experiments. Comparing the measurement results of both, the measurement resolution of CAFM is far superior to that of SSPM. With the DVD + RW disc rotating at a linear speed of 3.5 m/s, appropriate writing laser power range, may be precisely identified by CAFM as 10-15 mW. This is sufficient to verify the high-resolution recording bits research method. This new method may also be applied to the development of new types of phase-change recording materials.

Nanoscale electrical properties of ZnO nanorods grown by chemical bath deposition.

Well-aligned zinc oxide nanorod arrays (ZNAs) synthesized using chemical bath deposition were fabricated on a gallium-doped zinc oxide substrate, and the effects of varying the precursor concentrations on the growth and nanoscale electrical properties of the ZNAs were investigated. The as-synthesized ZNAs were characterized using field-emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), conducting atomic force microscopy (CAFM), and scanning surface potential microscopy (SSPM). The FESEM and AFM images show that the growth rate in terms of length and diameter is highly sensitive to the precursor concentration. CAFM and SSPM analyses indicate that when concentrations of both the zinc acetate and hexamethylenetetramine solutions were 30 mM, the coverage percentages of the recordable and conducting regions on the ZNA surface were 48.3% and 0.9%, which is suitable for application in resistive random access memory devices.

Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy.

Gallium nitride (GaN) films were grown on sapphire and zinc oxide (ZnO) single crystal substrates using plasma-assisted molecular beam epitaxy. As ZnO for GaN have a better lattice match, the coverage ratio of the GaN (002) plane on the ZnO substrate was significantly higher by about 45%. According to conducting atomic force microscopy and scanning surface potential microscopy measurements, the surface of GaN films grown on the ZnO substrate had two excellent physical characteristics: (a) an 18% reduction of the high contact current region, and (b) a highly uniform work function distribution. Therefore, for future applications in GaN-based light-emitting diodes, the use of ZnO as a substrate will prolong the luminescence lifetime and enhance the luminescent monochromaticity.