Thermal probe maskless lithography for 27.5 nm half-pitch Si technology.

Thermal scanning probe lithography is used for creating lithographic patterns with 27.5 nm half-pitch line density in a 50 nm thick high carbon content organic resist on a Si substrate. The as-written patterns in the poly phthaladehyde thermal resist layer have a depth of 8 nm, and they are transformed into high-aspect ratio binary patterns in the high carbon content resist using a SiO2 hard-mask layer with a thickness of merely 4 nm and a sequence of selective reactive ion etching steps. Using this process, a line-edge roughness after transfer of 2.7 nm (3σ) has been achieved. The patterns have also been transferred into 50 nm deep structures in the Si substrate with excellent conformal accuracy. The demonstrated process capabilities in terms of feature density and line-edge roughness are in accordance with today's requirements for maskless lithography, for example for the fabrication of extreme ultraviolet (EUV) masks.

Three-dimensional photonic crystals by large-area membrane stacking.

We designed and analyzed a "mesh-stack" three-dimensional photonic crystal of a 12.4% bandgap with a dielectric constant ratio of 12 : 1. The mesh-stack consists of four offset identical square-lattice air-hole patterned membranes in each vertical period that is equal to the in-plane period of the square lattice. This design is fully compatible with the membrane-stacking fabrication method, which is based on alignment and stacking of large-area single-crystal membranes containing engineered defects. A bandgap greater than 10% is preserved as long as the membranes are subjected to in-plane misalignment less than 3% of the square period. By introducing a linear defect with a nonsymmorphic symmetry into the mesh-stack, we achieved a single-mode waveguide over a wide bandwidth.

Neon Ion Beam Lithography (NIBL).

Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm(2), ∼1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography.