Organic amine-mediated free-radical carbocyclization reactions of 2,2,2-trihalogeno-substituted N-(2-alkynylphenyl)acetamides.

An efficient method for the synthesis of 3-halogeno-substituted 4-benzoylquinolin-2-(1H)-ones from N-(2-alkynylphenyl)-substituted trihaloacetamides has been developed, in which organic amines (TNPA and DIEA) act as the electron donors. In this carbocyclization reaction, a new C-C bond formation occurred regioselectively via a 6-exo-dig radical cyclization. A variety of useful functional groups are compatible with the reaction conditions. In this process, readily removable organic amines were employed and no heavy metal catalysts were required.

The Solitary Isomer of C60 H18 Is Proven to Have a C3v Crown Shape: Crystal Structure Determination and Synthesis of Its Triruthenium Cluster Complex.

Analytically pure C60 H18 is obtained by a Ru3 cluster complexation and decomplexation method. The crystal structure of C60 H18 consists of one flattened hemisphere, to which all 18 hydrogen atoms are symmetrically bonded, and one curved hemisphere akin to C60 . A benzenoid ring in the flattened hemisphere is isolated from the residual π systems by a belt composed of sp(3) -hybridized CH units. The average out-of-plane distances for carbon atoms attached to the benzenoid ring (0.14 Å) is substantially larger than that found in C60 F18 (0.06 Å). Several long C(sp(3) )C(sp(3) ) single bond lengths [1.61(3)-1.65(3) Å] are observed for C60 H18 . The reaction of [Ru3 (CO)12 ] and C60 H18 produces [Ru3 (CO)9 (µ3 -η(2) ,η(2) ,η(2) -C60 H18 )] (1), where the Ru3 triangle is regiospecifically linked to the hexagon opposite to the benzenoid ring. Compound 1 is the first transition metal complex of a polyhydrofullerene (fullerane). C60 H18 and 1 have been characterized by (1) H and (13) C NMR, UV/Vis, and mass spectroscopies. The HOMO-LUMO gap of C60 H18 is evaluated to be 1.51 V by cyclic voltammetry.

Harnessing of Spatially Confined Perovskite Nanocrystals Using Polysaccharide-based Block Copolymer Systems.

Metal halide perovskite nanocrystals (PVSK NCs) are generally unstable upon their transfer from colloidal dispersions to thin film devices. This has been a major obstacle limiting their widespread application. In this study, we proposed a new approach to maintain their exceptional optoelectronic properties during this transfer by dispersing brightly emitting cesium lead halide PVSK NCs in polysaccharide-based maltoheptaose-block-polyisoprene-block-maltoheptaose (MH-b-PI-b-MH) triblock copolymer (BCP) matrices. Instantaneous crystallization of ion precursors with favorable coordination to the sugar (maltoheptaose) domains produced ordered NCs with varied nanostructures of controlled domain size (≈10-20 nm). Confining highly ordered and low dimension PVSK NCs in polysaccharide-based BCPs constituted a powerful tool to control the self-assembly of BCPs and PVSK NCs into predictable structures. Consequently, the hybrid thin films exhibited excellent durability to humidity and stretchability with a relatively high PL intensity and photoluminescence quantum yield (>70%). Furthermore, stretchable phototransistor memory devices were produced and maintained with a good memory ratio of 105 and exhibited a long-term memory retention over 104 s at a high strain of 100%.

Comprehensive Non-volatile Photo-programming Transistor Memory via a Dual-Functional Perovskite-Based Floating Gate.

Photonic transistor memory has received increasing attention as next-generation optoelectronic devices for light fidelity (Li-Fi) application due to the attractive advantages of ultra-speed, high security, and low power consumption. However, most transistor-type photonic memories developed to date still rely on electrical bias for operation, imposing certain limits on data transmission efficiency and energy consumption. In this study, the dual manipulation of "photo-writing" and "photo-erasing" of a novel photonic transistor memory is successfully realized by cleverly utilizing the complementary light absorption between the photoactive material, n-type BPE-PTCDI, in the active channel and the hybrid floating gate, CH3NH3PbBr3/poly(2-vinylpyridine). The fabricated device not only can be operated under the full spectrum but also shows stable switching cycles of photo-writing (PW)-reading (R)-photo-erasing (PE)-reading (R) (PW-R-PE-R) with a high memory ratio of ∼104, and the memory characteristics possess a stable long-term retention of >104 s. Notably, photo-erasing only requires 1 s light illumination. Due to the fully optical functionality, the rigid gate electrode is removed and a novel two-terminal flexible photonic memory is fabricated. The device not only exhibits stable electrical performance after 1000 bending cycles but also manifests a multilevel functional behavior, demonstrating a promising potential for the future development of photoactive electronic devices.

Nanostructure- and Orientation-Controlled Resistive Memory Behaviors of Carbohydrate-block-Polystyrene with Different Molecular Weights via Solvent Annealing.

We report the resistive electrical memory characteristics controlled by the self-assembled nanostructures of maltoheptaose-block-polystyrene (MH-b-PS) block copolymers, where the MH and PS blocks provide the charge-trapping and the insulating tunneling layer, respectively. A simple solvent annealing process, with various annealing conditions, were introduced for MH-b-PS thin films to achieve disordered, orientated cylinders and ordered-packed spheres morphologies. More details about the self-assembled MH-b-PS nanostructures, coupled with different volume fractions between MH and PS blocks, were investigated using atomic force microscopy and grazing-incidence small-angle X-ray scattering analyses. Moreover, various electrical memory behaviors including nonvolatile write-once-read-many-times (WORM) and Flash, and volatile dynamic-random-access-memory (DRAM) could be obtained by the same material (MH-b-PS3k). This study establishes a detailed relationship between the nanostructure of the MH-b-PS-based block copolymers and their memory behavior of the resistive memory devices.