Molecular beam epitaxial growth of multilayer 2D-boron nitride on Ni substrates from borazine and plasma-activated nitrogen.

2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. The excess of nitrogen atoms allows to overcome the thickness self-limitation active on Ni when using borazine alone. The nucleation density and the shape of the 2D-BN domains are clearly related to the Ni substrate preparation and to the growth parameters. Based on spatially-resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of the N1s and B1s components and their relationship with an electronic coupling at the interface. After optimization of the growth parameters, a full 2D-BN coverage is obtained, although the material thickness is not evenly distributed. The 2D-BN presents a granular structure on (111) oriented Ni grains, showing a rather poor cristallographic quality. On the contrary, high quality 2D-BN is found on (101) and (001) Ni grains, where triangular islands are observed whose lateral size is limited to ∼20µm.

The effects of substitutional doping on Cu vacancy formation in Cu2O(111): a density functional theory study.

Using density functional theory (DFT) calculations, we examined the effects of substitutional doping on the formation of Cu vacancies in Cu2O(111). Upon replacing coordinatively unsaturated O with other elements (N, F, P, S, and Cl) and calculating the formation energies, we found that compared to the undoped surface, Cu vacancy formation is most favorable in the F-doped surface and least favorable in the N-doped Cu2O(111) surface. In addition, we found that in most cases, vacancy formation of the coordinatively saturated Cu has higher vacancy formation energy than coordinatively unsaturated Cu atoms. In the electron localization function plots and the projected charge distributions of the local density of states, we found bonding enhancement between Cu and N in N-Cu2O(111) but no corresponding enhancement was observed in the F-doped surface. Our results showed that the interaction between the substitutional dopants and the Cu atoms affects the formation of the doped system and the Cu vacancy formation in the surface.

Degradation of Albumin on Plasma-Treated Polystyrene by Soft X-ray Exposure.

Thin films of human serum albumin (HSA) were immobilized on polystyrene (PS) substrates previously functionalized either with polar or nonpolar functional groups. The functionalization was performed by treatment with cold gaseous plasma created in pure oxygen and tetrafluoromethane (CF4) plasmas, respectively. Samples were examined with soft X-rays in the photon energy range of 520 to 710 eV in the ANTARES beam line at SOLEIL Synchrotron. NEXAFS spectra of O K-edge and F K-edge were collected at different spots of the sample, and measurements at each spot were repeated many times. A strong degradation of the HSA protein was observed. The weakly irradiated samples exhibited strong absorption at 531.5 eV associated with the O 1s→π*amide transitions, and a broad non distinctive peak at 540 eV was attributed to the O 1s→σ*C⁻O transitions. Both peaks decreased with increasing irradiation time until they were completely replaced by a broad non-distinctive peak at around 532 eV, indicating the destruction of the original protein conformation. The shortage of the amide groups indicated breakage of the peptide bonds.

The quasiparticle band dispersion in epitaxial multilayer silicene.

The growth of multilayer silicene is an exciting challenge for the future of silicon nano-electronics. Here, we use angle-resolved photoemission spectroscopy to map the entire Brillouin zone (BZ) of (√3 × âˆš3)R30° reconstructed epitaxial multilayer silicene islands, growing on top of the first (3 × 3) reconstructed silicene wetting layer, on Ag(111) substrates. We found Λ- and V-shape linear dispersions, which we relate to the π and π* bands of massless quasiparticles in multilayer silicene, at the BZ centre [Formula: see text] and at all the [Formula: see text] centres of the (√3 × âˆš3)R30° Brillouin zones in the extended scheme, due to folding of the Dirac cones at the [Formula: see text] and [Formula: see text] points of the (1 × 1) silicene BZ. The Fermi velocity of ∼0.3 × 10(6) m s(-1) obtained is highly promising for potential silicene-based devices.