MO detector (MOD): a dual-function optical modulator-detector for on-chip communication.

While augmenting network on chips (NoC) with photonic links enables high-bandwidth communication, the overhead for photonics is rather large, mainly driven by bulky footprints and the multi-functionality of transceivers. The latter requires, in addition to a photon source, signal modulation and detection. If the NoC were photonically augmented at every network point to enable all-to-all connectivity, the resulting photonic overhead would be excessive. Besides, the high bandwidth of a single optical bus may be sufficient to supply the data-sharing demand of a network. Spatial signal routing is a necessary function of data communication in NoCs. However, if photonic links are used to augment electronics, an energy-costly optical-electrical-optical (OEO) conversion is required since routing is currently executed in the electronic domain. Here we show a novel integrated broadband hybrid photonic-plasmonic device termed an MO detector featuring dual light modulation and detection. With 10 dB extinction ratio and 0.8 dB insertion loss at the modulation state and 0.7 A/W responsivity at the detection state based on the finite-different time-domain simulation, this transceiver-like device (i) eliminates the OEO conversion, (ii) reduces optical losses from photodetectors via bypassing the photodetector when not needed, and (iii) enables cognitive routing strategies for network-on-chips. As such, the MO detector acts as a micrometer-compact transceiver for next-generation NoCs.

Attojoule-efficient graphene optical modulators.

Electro-optic modulation is a technology-relevant function for signal keying, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. With silicon-based modulators being bulky and inefficient, here we discuss graphene-based devices heterogeneously integrated. This study provides a critical and encompassing discussion of the physics and performance of graphene. We provide a holistic analysis of the underlying physics of modulators including graphene's index tunability, the underlying optical mode, and discuss resulting performance vectors for this novel class of hybrid modulators. Our results show that reducing the modal area and reducing the effective broadening of the active material are key to improving device performance defined by the ratio of energy-bandwidth and footprint. We further show how the waveguide's polarization must be in-plane with graphene, such as given by plasmonic-slot structures, for performance improvements. A high device performance can be obtained by introducing multi- or bi-layer graphene modulator designs. Lastly, we present recent results of a graphene-based hybrid-photon-plasmon modulator on a silicon platform and discuss electron beam lithography treatments for transferred graphene for the relevant Fermi level tuning. Being physically compact, this 100 aJ/bit modulator opens the path towards a novel class of attojoule efficient opto-electronics.

Enhancing the modulation bandwidth of VCSELs to the millimeter-waveband using strong transverse slow-light feedback.

We present modeling on the millimeter (mm)-wave modulation of vertical-cavity surface-emitting laser (VCSEL) with a transverse coupled cavity (TCC). We show that strong slow-light feedback can induce 300% boosting of the modulation bandwidth of the TCC-VCSEL. Also, the strong lateral feedback can induce resonance modulation over passbands centered on frequencies as high as 3.8 times the VCSEL bandwidth. The slow-light feedback is modeled by a time-delay rate equation model that takes into account the multiple round trips as well as the optical loss and phase delay in each round trip in the feedback cavity.

Low-voltage, high-speed and compact electro-absorption modulator laterally integrated with 980-nm VCSEL.

We present a compact electro-absorption slow-light modulator laterally-integrated with a 980-nm VCSEL. We figured out the small signal modulation response for different modulator lengths. While the 3-dB small-signal modulation bandwidth of conventional directly modulated VCSELs on the same epi-wafer structure was limited below 10 GHz, we obtained a modulation bandwidth over 21 GHz for a 30 µm long modulator. We also demonstrated large signal modulation up to 25 Gbps with a low driving voltage below 600 mV(pp) and an extinction ratio of 4 dB for the modulator length of 50 µm. Prospects of much higher speed (> 40 Gbps) were examined with reducing the size of the modulator. Also, the tapered waveguide coupling structure enables "quasi-unidirectional coupling", which reduces the optical feedback in a VCSEL from the integrated modulator.

Comprehensive Study and Design of Graphene Transistor.

Graphene, renowned for its exceptional electrical, optical, and mechanical properties, takes center stage in the realm of next-generation electronics. In this paper, we provide a thorough investigation into the comprehensive fabrication process of graphene field-effect transistors. Recognizing the pivotal role graphene quality plays in determining device performance, we explore many techniques and metrological methods to assess and ensure the superior quality of graphene layers. In addition, we delve into the intricate nuances of doping graphene and examine its effects on electronic properties. We uncover the transformative impact these dopants have on the charge carrier concentration, bandgap, and overall device performance. By amalgamating these critical facets of graphene field-effect transistors fabrication and analysis, this study offers a holistic understanding for researchers and engineers aiming to optimize the performance of graphene-based electronic devices.

Enhancing Focusing and Defocusing Capabilities with a Dynamically Reconfigurable Metalens Utilizing Sb2Se3 Phase-Change Material.

Metalenses are emerging as an alternative to digital micromirror devices (DMDs), with the advantages of compactness and flexibility. The exploration of metalenses has ignited enthusiasm among optical engineers, positioning them as the forthcoming frontier in technology. In this paper, we advocate for the implementation of the phase-change material, Sb2Se3, capable of providing swift, reversible, non-volatile focusing and defocusing within the 1550 nm telecom spectrum. The lens, equipped with a robust ITO microheater, offers unparalleled functionality and constitutes a significant step toward dynamic metalenses that can be integrated with beamforming applications. After a meticulously conducted microfabrication process, we showcase a device capable of rapid tuning (0.1 MHz level) for metalens focusing and defocusing at C band communication, achieved by alternating the PCM state between the amorphous and crystalline states. The findings from the experiment show that the device has a high contrast ratio for switching of 28.7 dB.

Self-Powered Sb2Te3/MoS2 Heterojunction Broadband Photodetector on Flexible Substrate from Visible to Near Infrared.

Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS2/Sb2Te3 vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. These heterojunction devices provide ultra-low dark currents as small as 4.3 pA, a robust photoresponsivity of 0.12 A W-1, and reasonable response times characterized by rising and falling durations of 0.197 s and 0.138 s, respectively. These novel devices exhibit remarkable tunability under the application of compressive strain up to 0.3%. The introduction of strain at the heterojunction interface influences the bandgap of the materials, resulting in a significant alteration of the heterojunction's band structure. This subsequently shifts the detector's optical absorption properties. The proposed strategy of strain-induced engineering of the stacked 2D crystal materials allows the tuning of the electronic and optical properties of the device. Such a technique enables fine-tuning of the optoelectronic performance of vdWs devices, paving the way for tunable high-performance, low-power consumption applications. This development also holds significant potential for applications in wearable sensor technology and flexible electro-optic circuits.

Electrical programmable multilevel nonvolatile photonic random-access memory.

Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase-Change Materials (PCMs) have been showed multilevel memory capability, but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumption and system package challenges. Here we demonstrate a multistate electrically programmed low-loss nonvolatile photonic memory based on a broadband transparent phase-change material (Ge2Sb2Se5, GSSe) with ultralow absorption in the amorphous state. A zero-static-power and electrically programmed multi-bit P-RAM is demonstrated on a silicon-on-insulator platform, featuring efficient amplitude modulation up to 0.2 dB/µm and an ultralow insertion loss of total 0.12 dB for a 4-bit memory showing a 100× improved signal to loss ratio compared to other phase-change-materials based photonic memories. We further optimize the positioning of dual microheaters validating performance tradeoffs. Experimentally we demonstrate a half-a-million cyclability test showcasing the robust approach of this material and device. Low-loss photonic retention-of-state adds a key feature for photonic functional and programmable circuits impacting many applications including neural networks, LiDAR, and sensors for example.

Fast, accurate, point-of-care COVID-19 pandemic diagnosis enabled through advanced lab-on-chip optical biosensors: Opportunities and challenges.

The sudden rise of the worldwide severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) pandemic in early 2020 has called into drastic action measures to perform instant detection and reduce the rate of spread. Common clinical and nonclinical diagnostic testing methods have been partially effective in satisfying the increasing demand for fast detection point-of-care (POC) methods to slow down further spread. However, accurate point-of-risk diagnosis of this emerging viral infection is paramount as the need for simultaneous standard operating procedures and symptom management of SARS-CoV-2 will be the norm for years to come. A sensitive, cost-effective biosensor with mass production capability is crucial until a universal vaccination becomes available. Optical biosensors can provide a noninvasive, extremely sensitive rapid detection platform with sensitivity down to ∼67 fg/ml (1 fM) concentration in a few minutes. These biosensors can be manufactured on a mass scale (millions) to detect the COVID-19 viral load in nasal, saliva, urine, and serological samples, even if the infected person is asymptotic. Methods investigated here are the most advanced available platforms for biosensing optical devices that have resulted from the integration of state-of-the-art designs and materials. These approaches include, but are not limited to, integrated optical devices, plasmonic resonance, and emerging nanomaterial biosensors. The lab-on-chip platforms examined here are suitable not only for SARS-CoV-2 spike protein detection but also for other contagious virions such as influenza and Middle East respiratory syndrome (MERS).

Heterogeneously integrated ITO plasmonic Mach-Zehnder interferometric modulator on SOI.

Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines the high group-index in hybrid plasmonic with nanoscale optical modes. Following this design paradigm, here, we demonstrate a spectrally broadband, GHz-fast Mach-Zehnder interferometric modulator, exhibiting a high efficiency signified by a miniscule VπL of 95 V µm, deploying a one-micrometer compact electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics. Furthermore we show, that this device paradigm enables spectrally broadband operation across the entire telecommunication near infrared C-band. Such sub-wavelength short efficient and fast modulators monolithically integrated into Silicon platform open up new possibilities for high-density photonic circuitry, which is critical for high interconnect density of photonic neural networks or applications in GHz-fast optical phased-arrays, for example.

InGaAs Membrane Waveguide: A Promising Platform for Monolithic Integrated Mid-Infrared Optical Gas Sensor.

Mid-infrared (mid-IR) absorption spectroscopy based on integrated photonic circuits has shown great promise in trace-gas sensing applications in which the mid-IR radiation directly interacts with the targeted analyte. In this paper, considering monolithic integrated circuits with quantum cascade lasers (QCLs) and quantum cascade detectors (QCDs), the InGaAs-InP platform is chosen to fabricate passive waveguide gas sensing devices. Fully suspended InGaAs waveguide devices with holey photonic crystal waveguides (HPCWs) and subwavelength grating cladding waveguides (SWWs) are designed and fabricated for mid-infrared sensing at λ = 6.15 µm in the low-index contrast InGaAs-InP platform. We experimentally detect 5 ppm ammonia with a 1 mm long suspended HPCW and separately with a 3 mm long suspended SWW, with propagation losses of 39.1 and 4.1 dB/cm, respectively. Furthermore, based on the Beer-Lambert infrared absorption law and the experimental results of discrete components, we estimated the minimum detectable gas concentration of 84 ppb from a QCL/QCD integrated SWW sensor. To the best of our knowledge, this is the first demonstration of suspended InGaAs membrane waveguides in the InGaAs-InP platform at such a long wavelength with gas sensing results. Also, this result emphasizes the advantage of SWWs to reduce the total transmission loss and the size of the fully integrated device's footprint by virtue of its low propagation loss and TM mode compatibility in comparison to HPCWs. This study enables the possibility of monolithic integration of quantum cascade devices with TM polarized characteristics and passive waveguide sensing devices for on-chip mid-IR absorption spectroscopy.

Ultra Sensitivity Silicon-Based Photonic Crystal Microcavity Biosensors for Plasma Protein Detection in Patients with Pancreatic Cancer.

Defect-engineered photonic crystal (PC) microcavities were fabricated by UV photolithography and their corresponding sensitivities to biomarkers in patient plasma samples were compared for different resonant microcavity characteristics of quality factor Q and biomarker fill fraction. Three different biomarkers in plasma from pancreatic cancer patients were experimentally detected by conventional L13 defect-engineered microcavities without nanoholes and higher sensitivity L13 PC microcavities with nanoholes. 8.8 femto-molar (0.334 pg/mL) concentration of pancreatic cancer biomarker in patient plasma samples was experimentally detected which are 50 times dilution than ELISA in a PC microcavity with high quality factor and high analyte fill fraction.

Electronic-photonic arithmetic logic unit for high-speed computing.

The past two decades have witnessed the stagnation of the clock speed of microprocessors followed by the recent faltering of Moore's law as nanofabrication technology approaches its unavoidable physical limit. Vigorous efforts from various research areas have been made to develop power-efficient and ultrafast computing machines in this post-Moore's law era. With its unique capacity to integrate complex electro-optic circuits on a single chip, integrated photonics has revolutionized the interconnects and has shown its striking potential in optical computing. Here, we propose an electronic-photonic computing architecture for a wavelength division multiplexing-based electronic-photonic arithmetic logic unit, which disentangles the exponential relationship between power and clock rate, leading to an enhancement in computation speed and power efficiency as compared to the state-of-the-art transistors-based circuits. We experimentally demonstrate its practicality by implementing a 4-bit arithmetic logic unit consisting of 8 high-speed microdisk modulators and operating at 20 GHz. This approach paves the way to future power-saving and high-speed electronic-photonic computing circuits.

Towards integrated metatronics: a holistic approach on precise optical and electrical properties of Indium Tin Oxide.

The class of transparent conductive oxides includes the material indium tin oxide (ITO) and has become a widely used material of modern every-day life such as in touch screens of smart phones and watches, but also used as an optically transparent low electrically-resistive contract in the photovoltaics industry. More recently ITO has shown epsilon-near-zero (ENZ) behavior in the telecommunication frequency band enabling both strong index modulation and other optically-exotic applications such as metatronics. However, the ability to precisely obtain targeted electrical and optical material properties in ITO is still challenging due to complex intrinsic effects in ITO and as such no integrated metatronic platform has been demonstrated to-date. Here we deliver an extensive and accurate description process parameter of RF-sputtering, showing a holistic control of the quality of ITO thin films in the visible and particularly near-infrared spectral region. We are able to custom-engineer the ENZ point across the telecommunication band by explicitly controlling the sputtering process conditions. Exploiting this control, we design a functional sub-wavelength-scale filter based on lumped circuit-elements, towards the realization of integrated metatronic devices and circuits.

Pedestal subwavelength grating metamaterial waveguide ring resonator for ultra-sensitive label-free biosensing.

Mode volume overlap factor is one of the parameters determining the sensitivity of a sensor. In past decades, many approaches have been proposed to increase the mode volume overlap. As the increased mode volume overlap factor results in reduced mode confinement, the maximum value is ultimately determined by the micro- and nano-structure of the refractive index distribution of the sensing devices. Due to the asymmetric index profile along the vertical direction on silicon-on-insulator platform, further increasing the sensitivity of subwavelength grating metamaterial (SGM) waveguide based sensors is challenging. In this paper, we propose and demonstrate pedestaled SGM which reduces the asymmetricity and thus allows further increasing the interaction between optical field and analytes. The pedestal structure can be readily formed by a controlled undercut etching. Both theoretical analysis and experimental demonstration show a significant improvement of sensitivity. The bulk sensitivity and surface sensitivity are improved by 28.8% and 1000 times, respectively. The detection of streptavidin at a low concentration of 0.1 ng/mL (∼1.67 pM) is also demonstrated through real-time monitoring of the resonance shift. A ∼400 fM streptavidin limit of detection is expected with a 0.01nm resolution spectrum analyzer based on the real-time measurement of streptavidin detection results from two-site binding model fitting.