Chromone-Based Cd(II) Fluorescent Coordination Polymer Fabricated to Study Optoelectronic and Explosive Sensing Properties.

Here, electrical conductivity and explosive sensing properties of multifunctional chromone-Cd(II)-based coordination polymers (CPs) (1-4) have been explored. The presence of different pseudohalide linkers, thiocyanate ions, and dicyanamide ions resulted in 1D and 3D architecture in the CPs. Thin film devices developed from CPs 1-4 (complex-based Schottky devices, CSD1, CSD2, CSD3, and CSD4, respectively) showed semiconductor behavior. Their conductivity values increased under photo illumination (1.37 × 10-5, 1.85 × 10-5, 1.61 × 10-5, and 2.01 × 10-5 S m-1 under dark conditions and 5.06 × 10-5, 8.78 × 10-5, 7.26 × 10-5, and 10.21 × 10-5 S m-1 under light). The nature of the I-V plots of these thin film devices under light irradiation and dark are nonlinear rectifying, which has been observed in Schottky barrier diodes (SBDs). All four CPs (1-4) exhibited highly selective fluorescence quenching-based sensing properties toward well-known explosives, 2,4-dinitrophenol (DNP) and 2,4,6-trinitrophenol (TNP). The limit of detection (LOD) values are 55, 28, 27, and 31 µM for TNP and 78, 44, 32, and 41 µM for DNP for complexes 1-4, respectively. A structure property correlation has been established to explain optoelectronic and explosive sensing properties.

Magnetic Stress-Driven Metal-Insulator Transition in Strongly Correlated Antiferromagnetic CrN.

Traditionally, the Coulomb repulsion or Peierls instability causes the metal-insulator phase transitions in strongly correlated quantum materials. In comparison, magnetic stress is predicted to drive the metal-insulator transition in materials exhibiting strong spin-lattice coupling. However, this mechanism lacks experimental validation and an in-depth understanding. Here we demonstrate the existence of the magnetic stress-driven metal-insulator transition in an archetypal material, chromium nitride. Structural, magnetic, electronic transport characterization, and first-principles modeling analysis show that the phase transition temperature in CrN is directly proportional to the strain-controlled anisotropic magnetic stress. The compressive strain increases the magnetic stress, leading to the much-coveted room-temperature transition. In contrast, tensile strain and the inclusion of nonmagnetic cations weaken the magnetic stress and reduce the transition temperature. This discovery of a new physical origin of metal-insulator phase transition that unifies spin, charge, and lattice degrees of freedom in correlated materials marks a new paradigm and could lead to novel device functionalities.

Pyridyl-Isonicotinoyl Hydrazone-Bridged Zn(II) Coordination Framework with Thiophenedicarboxylato Link: Structure, Biological Activity, and Electrical Conductivity.

Multidimensional applicability of functional materials is one of the focal attractions in today's scientific research. Highly stable and crystalline coordination polymers served as one of the active members in the club of multifunctional materials. Toward this concept, a 3-dimensional (3D) coordination framework, {[Zn2(tdc)2(pcih)2]n} (1) (tdc2-, 2,5-thiophene dicarboxylate; pcih, pyridine-4-carboxaldehyde isonicotinoyl hydrazine), is designed and has been structurally well characterized by single crystal X-ray crystallography. One of the carboxylate groups of tdc2- chelates to Zn(II), while the other carboxylato group (-COO) acts as bridging-O to neighboring Zn(II); the pcih serves as pyridyl-N bridging motif to two Zn(II) centers. The optical band gap, 3.83 eV (Tauc's plot), implies probable semiconducting ability of the material. Interestingly, the device fabricated using compound 1 measures the electrical conductivity, 2.21 × 10-5 S cm-1, and series resistance (Rs), 807 Ω, at the dark phase, which are improved significantly to 6.36 × 10-5 S cm-1 and 460 Ω, respectively, under illumination conditions. Isoniazid, used to synthesize pcih and hence the Zn(II) compound 1, is a medicine; so, the medicinal efficiency of 1 is checked by measuring the anticancer activity against MDA-MB-231, HeLa, HCT-116, and HepG2 cells. It is observed that drug efficacy is highest on MDA-MB-231 cells (IC50: 19.43 ± 1.36 µM) than other cancer cells [IC50: 24.43 ± 2.02 µM (HeLa), 26.06 ± 3.48 µM (HCT-116), and 44.28 ± 3.04 µM (HepG2)]. Therefore, the material has significant contribution in the area of energy and health toward the sustainable development goals.

Beam damage of single semiconductor nanowires during X-ray nanobeam diffraction experiments.

Nanoprobe X-ray diffraction (nXRD) using focused synchrotron radiation is a powerful technique to study the structural properties of individual semiconductor nanowires. However, when performing the experiment under ambient conditions, the required high X-ray dose and prolonged exposure times can lead to radiation damage. To unveil the origin of radiation damage, a comparison is made of nXRD experiments carried out on individual semiconductor nanowires in their as-grown geometry both under ambient conditions and under He atmosphere at the microfocus station of the P08 beamline at the third-generation source PETRA III. Using an incident X-ray beam energy of 9 keV and photon flux of 1010 s-1, the axial lattice parameter and tilt of individual GaAs/In0.2Ga0.8As/GaAs core-shell nanowires were monitored by continuously recording reciprocal-space maps of the 111 Bragg reflection at a fixed spatial position over several hours. In addition, the emission properties of the (In,Ga)As quantum well, the atomic composition of the exposed nanowires and the nanowire morphology were studied by cathodoluminescence spectroscopy, energy-dispersive X-ray spectroscopy and scanning electron microscopy, respectively, both prior to and after nXRD exposure. Nanowires exposed under ambient conditions show severe optical and morphological damage, which was reduced for nanowires exposed under He atmosphere. The observed damage can be largely attributed to an oxidation process from X-ray-induced ozone reactions in air. Due to the lower heat-transfer coefficient compared with GaAs, this oxide shell limits the heat transfer through the nanowire side facets, which is considered as the main channel of heat dissipation for nanowires in the as-grown geometry.

Nanoparticle Induced Morphology Modulation in Spin Coated PS/PMMA Blend Thin Films.

The influence of adding nanoparticles on the ascast morphology of spin coated immiscible polystyrene/poly(methyl methacrylate) (PS/PMMA) thin films of different thickness (hE) and composition (RB, volume ratio of PS to PMMA) has been explored in this article. To understand the precise effect of nanoparticle addition, the morphology of PS/PMMA thin blend films spin cast from toluene on a native oxide covered silicon wafer substrate was first investigated. It is seen that in particle free films, the generic morphology of the films remains nearly unaltered with increase in hE, for RB = 3:1 and 1:3. In contrast, strong hE dependent morphology transformation is observed in films with RB = 1:1. Subsequently, thiol-capped gold nanoparticles (AuNP) containing films with different particle concentrations (CNP) were cast from the same solvent along with the polymer mixture. We observe that addition of AuNPs barely alters the generic morphology of the films with RB = 3:1. In contrast, the presence of the particles significantly influences the morphology of the films with RB = 1:1 and 1:3, particularly at higher CNP (≈10.0%). X-ray photoelectron spectroscopy and X-ray reflectivity of some samples reveal that the AuNPs tend to migrate to the free surface through the PS phase, thereby stabilizing this layer partially or fully (depending on CNP) against dewetting over a surface of adsorbed PMMA layer and influencing the ascast morphology as a function of CNP. The work is fundamentally important in understanding largely overlooked implications of nanoparticle addition on the morphology of PS/PMMA blend thin films which forms the fundamental basis for future interesting studies involving dynamics of nanoparticles within the blend thin films.

Biporous Cd(II) Coordination Polymer via in Situ Disulfide Bond Formation: Self-Healing and Application to Photosensitive Optoelectronic Device.

A heteroporous metal-organic framework, [Cd2(2,2'-DSB)2(INH)2(H2O)2]n (1), is fabricated by the reaction of CdI2, 2-mercaptobenzoic acid (2-MBAH), and isoniazid (INH). The X-ray structure of the compound 1 shows the bridging INH and 2,2'-disulfanediyldibenzoic acid (H22,2'-DSBA) around the Cd(II) ion center. 2-MBAH has been in situ dimerized to the formation of 2,2'-DSB2- (S-S-bonded dianion), which has further extended to form the 2D network. However, supramolecular assembly via π···π and hydrogen bonds strengthens the structural motif within the 3D array. Optical stimulation generated the thiol radical under an argon environment followed by the electron paramagnetic resonance (EPR) study, but upon exposure to air, the EPR signal gradually disappeared by the formation of the S-S bond, which was commonly known as a self-healing property. Again, compound 1 exhibited as a semiconducting material with a band gap of 3.7 eV. The I-V characteristics of 1 show that the conductivity is intensified by an optical response. The Schottky diode property of 1 shows a lower barrier height, a lower resistance, and a higher conductivity upon illumination at 360 nm.

Multifunctional Ni(II)-Based Metamagnetic Coordination Polymers for Electronic Device Fabrication.

The combination of two 8-aminoquinoline-based Schiff base ligands (L1 and L2) with SCN- and Ni(II) has led to the synthesis of two new one-dimensional thiocyanato-bridged coordination polymers: [Ni(L1)(NCS)2]n (1) and [Ni(L2)(NCS)2]n (2). Both compounds are isostructural and consists of regular zigzag thiocyanato-bridged chains with very weak S···S interchain interactions. The measured room-temperature conductivities of compounds 1 and 2 (7.0 × 10-5 and 2.0 × 10-5 S m-1, respectively) are indicative of semiconductor behavior which increases in the presence of photoillumination (3.5 × 10-4 and 4.9 × 10-4 S m-1, respectively). The measured I-V characteristics of compound 1 and 2 based thin film metal-semiconductor (MS) junction devices under irradiation and nonirradiation conditions show a nonlinear rectifying behavior, typical of a Schottky diode (SD). The rectification ratios (Ion/Ioff) of the SDs in the dark at ±2 V (26.96 and 31.96 for 1- and 2-based devices, respectively) increase to 44.19 and 79.42, respectively, upon light irradiation. The photoinduced behavior has been analyzed by thermionic emission theory, and to determine the diode parameters, the Cheung's method has been employed. These diode parameters indicate that compound 2 has a better performance in comparison to compound 1 and that these materials are good candidates for applications in electrochemical devices. Magnetic measurements show that both compounds present ferromagnetic Ni-Ni intrachain and weak antiferromagnetic interchain interactions. The isothermal magnetizations at 2 K show that both compounds are metamagnets with critical fields of ca. 130 mT in 1 and 90 mT in 2 at 2 K. In the ferromagnetic phase (above the critical field), both compounds exhibit a long-range ferromagnetic order with critical temperatures of around 3.5 K in 1 and 3.0 K in 2. DC and AC measurements with different applied DC fields confirm the metamagnetic behaviors and have allowed the determination of the magnetic phase diagram in both compounds.

Correction: Citrate combustion synthesized Al-doped CaCu3Ti4O12 quadruple perovskite: synthesis, characterization and multifunctional properties.

Correction for 'Citrate combustion synthesized Al-doped CaCu3Ti4O12 quadruple perovskite: synthesis, characterization and multifunctional properties' by Kamalesh Pal et al., Phys. Chem. Chem. Phys., 2020, 22, 3499-3511, DOI: 10.1039/C9CP05005A.

Citrate combustion synthesized Al-doped CaCu3Ti4O12 quadruple perovskite: synthesis, characterization and multifunctional properties.

The facile synthesis of the Al-doped CaCu3Ti4O12 quadruple perovskite, a well-known and vastly studied material for various technological applications, using the modified citrate combustion route along with structural, microstructural, and X-ray photoelectron spectroscopic (XPS) characterization and magnetic, dielectric and electrical properties has been investigated and reported here. The possible applications of the material as a Schottky barrier diode (SBD) in optoelectronic devices and as a catalyst in methanol steam reforming (MSR) reaction for hydrogen generation, hitherto unreported in the open literature, have also been explored. The compound is crystallized in the cubic body centered Im3[combining macron] space group and the particle size is found to be in nanodimension with rather narrow size distribution. The enhanced resistivity could be attributed to the grain boundary effect, and consequently, it exhibits better performance as a SBD compared to the undoped sample. Desired cationic composition with expected valence states within the probe range is confirmed by XPS analysis. A better catalytic activity towards MSR is noticed for the Al-doped CaCu3Ti4O12 compared to the undoped composition. These new findings, namely MSR activity and applicability in the Schottky device, have highlighted further the multifunctional nature of the material in energy related issues and would thus be of interest to the materials community searching for functional materials.

Sunlight-Induced Topochemical Photodimerization and Switching of the Conductivity of a Metal-Organic Compound.

A metal-organic compound [Cd(quin)2(4-nvp)2] [1; Hquin = quinoline-2-carboxylic acid and 4-nvp = 4-(1-naphthylvinyl)pyridine] undergoes topochemical [2 + 2] cycloaddition by sunlight irradiation to generate a one-dimensional coordination polymer. This reaction is thermally reversible, and switching between two crystalline forms can be monitored by conductivity measurements.

Enhanced magnetism and time-stable remanence at the interface of hematite and carbon nanotubes.

The interface of two dissimilar materials is well known for surprises in condensed matter, and provides avenues for rich physics as well as seeds for future technological advancements. We present some exciting magnetization (M) and remanence (µ) results, which conclusively arise at the interface of two highly functional materials, namely the graphitic shells of a carbon nanotube (CNT) and α-Fe2O3, a Dzyaloshinskii-Moriya interaction driven weak ferromagnet (WFM) and piezomagnet (PzM). We show that the encapsulation inside a CNT leads to a significant enhancement in M and correspondingly in µ, a time-stable part of the remanence, exclusive to the WFM phase. Up to 70% of in-field magnetization is retained in the form of µ at room temperature. The lattice parameter of the CNT around the Morin transition of the encapsulate exhibits a clear anomaly, confirming the novel interface effects. Control experiments on bare α-Fe2O3 nanowires bring into the fore that the weak ferromagnets such as α-Fe2O3 are not as weak, as far as their remanence and its stability with time is concerned, and encapsulation inside a CNT leads to a substantial enhancement in these functionalities.

Photochemical Structural Transformation of a Linear 1D Coordination Polymer Impacts the Electrical Conductivity.

A pair of 4-(1-naphthylvinyl)pyridine (4-nvp) ligands has been successfully aligned in head-to-tail fashion in a one-dimensional (1D) double chain ladder polymer [Cd(adc)(4-nvp)2(H2O)] n (1; H2adc = acetylenedicarboxylic acid) that undergoes a photochemical [2 + 2] cycloaddition reaction accompanied by single-crystal to single-crystal (SCSC) structural transformation from a 1D chain to a 2D layer structure. These structural changes have a significant impact on the conductivity and Schottky nature of the compound.

Set of Multifunctional Azo Functionalized Semiconducting Cd(II)-MOFs Showing Photoswitching Property and Selective CO2 Adsorption.

Syntheses, structural characterizations, photoluminescence, and adsorption properties of three new azo-functionalized Cd(II)-MOFs, namely, {[Cd(azbpy)(msuc)]·2.5(H2O)}n (2), {[Cd(azbpy)(mglu)]·5(H2O)}n (3), and {[Cd1.5(azbpy)2(glu)]·(NO3)·MeOH}n (4) [where msuc2- = methylsuccinate; mglut2- = methylglutarate; glut2- = glutarate; azbpy = 4,4'-azobispyridine] have been reported. The compounds show different structures only with the variation of aliphatic dicarboxylates. The photoswitching behavior for the above-mentioned newly synthesized Cd(II)-MOFs along with one of our previously reported other azo-functionalized Cd(II)-MOF, namely, {[Cd(azbpy)(suc)]·2(H2O)}n (1), has been studied extensively. At photoilluminated condition, the conductivity values can draw a clear structure-property relationship among the structures of compounds 1-4. Single crystal structural analysis reveals that all the compounds exhibit a three-dimensional (3D) framework connected by azbpy linker and respective aliphatic dicarboxylate through their bis-chelating mono/bis oxo-bridging fashion. Compounds 1-3 exhibit an iso-structural honeycomb like 3D framework showing the same coordination environments, where the metal-carboxylate 2D sheets of compounds 1-3 are pillared by N,N'-donor azbpy linkers. On the other hand, compound 4 exhibits a 2-fold interpenetrated 3D framework with a little difference in its coordination environment and the pillaring of 1D metal-carboxylate ladder by azbpy linkers. All the compounds significantly demonstrate their enhanced sensitivity under light rather than the dark condition. The gas and solvent vapor sorption studies have been performed for the synthesized compounds 2-4. Moreover, compound 2 exhibits an enhanced type IV selective CO2 adsorption isotherm over N2 along with the appearance of gate opening phenomena in that.

Engineered solid-state aggregates in brickwork stacks of n-type organic semiconductors: a way to achieve high electron mobility.

Efficient, economically viable n-type organic semiconductor materials suitable for solution-processed OFET devices with high electron mobility and ambient stability are scarce. Merging these attributes into a single molecule remains a significant challenge and a careful molecular design is needed. To address this, synthetic viability (achievable in fewer than three steps) and using cost-effective starting materials are crucial. Our research presents a strategy that meets these criteria using naphthalene diimide (NDI) core structures. The approach involves a simple synthesis process with a cost of $ 5-10 per gram for the final products. This paper highlights our success in scaling up the production using affordable known reagents, creating ambient condition solution-processed OFET devices with impressive electron mobility, on-off current ratio (1 cm2 V-1 s-1 and I on/I off ∼ 109) and good ambient stability (more than 100 h). We conducted a comprehensive study on EHNDIBr2, a material that demonstrates superior performance due to its unique supramolecular arrangement in its brickwork stack. This was compared with two similar structures to validate our findings. The superior performance of EHNDIBr2 is attributed to the effective interlocking of charge-hopping units within the NDI core in its brickwork stack. Our findings include detailed electronic, spectroscopic, and microscopic analyses of these layers.

Synthesis, characterization, crystal structure, and fabrication of photosensitive Schottky device of a binuclear Cu(ii)-Salen complex: a DFT investigations.

This work explores one centrosymmetric binuclear Cu(ii)-Salen complex synthesis, characterization, photosensitive Schottky barrier diode (PSBD) function, and DFT spectrum. The crystal growth involves H2LSAL and Cu(NO3)2·3H2O in CH3OH + ACN (acetonitrile) solvent medium. Herein, structural characterization employs elemental, IR/Raman, NMR, UV-VIS, DRS, SEM-EDX, PXRD, SCXRD, and XPS analyses. The complex crystal size is 0.2 × 0.2 × 0.2, showing monoclinic space group C2/c. The dimeric unit contains two Cu(ii) centres with distorted square pyramidal (SQP) geometries. The crystal packing consists of weak C-H⋯O interactions. DFT and Hirshfeld surface (HS) further substantiated the packing interactions, providing valuable insights into the underlying mechanisms. The 2-D fingerprint plots showed the presence of N⋯H (3%) and O⋯H (8.2%) contacts in the molecular arrangement. NBO, QTAIM, ELF-LOL, and energy frameworks are utilized to investigate the bonding features of the complex. We extensively studied electrical conductivity and PSBD for H2LSAL and the complex based on band gap (3.09 and 3.07 eV). Like an SBD, the complex has better electrical conductivity, evidencing potentiality in optoelectronic device applications. Optical response enhances conductivity, according to I-V characteristics. Complex Schottky diode has lower barrier height, resistance, and higher conductivity under light. The complex transports charge carriers through space and is rationalized by the 'hopping process' and 'structure-activity-relationship' (SAR). The charge transport mechanism was analysed by estimating complex mobility (µeff), lifetime (τ), and diffusion length (LD). The experimental and theoretical DOS/PDOS plots provide evidence for the Schottky diode function of the complex.

A novel supramolecular Zn(ii)-metallogel: an efficient microelectronic semiconducting device application.

A unique strategy for the synthesis of a supramolecular metallogel employing zinc ions and adipic acid in DMF medium has been established at room temperature. Rheological analysis was used to investigate the mechanical characteristics of the supramolecular Zn(ii)-metallogel. Field emission scanning electron microscopy and transmission electron microscopy were used to analyse the hexagonal shape morphological features of the Zn(ii)-metallogel. Interestingly, the electrical conductivity is observed in the electronic device with Zn(ii)-metallogel based metal-semiconductor (MS) junctions. All aspects of the metallogel's electrical properties were investigated. The electrical conductivity of the metallogel-based thin film device was 7.38 × 10-5 S m-1. The synthesised Zn(ii)-metallogel based device was investigated for its semi-conductive properties, such as its Schottky barrier diode nature.

Layer-resolved electronic behavior in a Kondo lattice system, CeAgAs2.

We investigate the electronic structure of an antiferromagnetic Kondo lattice system CeAgAs2employing hardx-ray photoemission spectroscopy. CeAgAs2, an orthorhombic variant of HfCuSi2structure, exhibits antiferromagnetic ground state, Kondo like resistivity upturn and compensation of magnetic moments at low temperatures. The photoemission spectra obtained at different photon energies suggest termination of the cleaved surface at cis-trans-As layers. The depth-resolved data show significant surface-bulk differences in the As and Ce core level spectra. The As 2pbulk spectrum shows distinct two peaks corresponding to two different As layers. The peak at higher binding energy correspond to cis-trans-As layers and is weakly hybridized with the adjacent Ce layers. The As layers between Ce and Ag-layers possess close to trivalent configuration due to strong hybridization with the neighboring atoms and the corresponding feature appear at lower binding energy. Ce 3dcore level spectra show multiple features reflecting strong Ce-As hybridization and strong correlation. Intensef0peak is observed in the surface spectrum while it is insignificant in the bulk. In addition, we observe a features at binding energy lower than the well-screened feature indicating the presence of additional interactions. This feature becomes more intense in the bulk spectra suggesting it to be a bulk property. Increase in temperature leads to a spectral weight transfer to higher binding energies in the core level spectra and a depletion of spectral intensity at the Fermi level as expected in a Kondo material. These results reveal interesting surface-bulk differences, complex interplay of intra- and inter-layer covalency, and electron correlation in the electronic structure of this novel Kondo lattice system.

Culling a Self-Assembled Quantum Dot as a Single-Photon Source Using X-ray Microscopy.

Epitaxially grown self-assembled semiconductor quantum dots (QDs) with atom-like optical properties have emerged as the best choice for single-photon sources required for the development of quantum technology and quantum networks. Nondestructive selection of a single QD having desired structural, compositional, and optical characteristics is essential to obtain noise-free, fully indistinguishable single or entangled photons from single-photon emitters. Here, we show that the structural orientations and local compositional inhomogeneities within a single QD and the surrounding wet layer can be probed in a screening fashion by scanning X-ray diffraction microscopy and X-ray fluorescence with a few tens of nanometers-sized synchrotron radiation beam. The presented measurement protocol can be used to cull the best single QD from the enormous number of self-assembled dots grown simultaneously. The obtained results show that the elemental composition and resultant strain profiles of a QD are sensitive to in-plane crystallographic directions. We also observe that lattice expansion after a certain composition-limit introduces shear strain within a QD, enabling the possibility of controlled chiral-QD formation. Nanoscale chirality and compositional anisotropy, contradictory to common assumptions, need to be incorporated into existing theoretical models to predict the optical properties of single-photon sources and to further tune the epitaxial growth process of self-assembled quantum structures.

Strategic fabrication of efficient photo-responsive semiconductor electronic diode-devices by Bovine Serum Albumin protein-based Cu(II)-metallohydrogel scaffolds.

Bovine Serum Albumin protein-based two fascinating functional self-healing Cu(II) metallohydrogel scaffolds (MD1 and MD2) have been studied for the development of metal-semiconductor junction based Schottky diode device. Multiple metal-semiconductor (MS) junction devices, offering the sandwich-like configuration of Indium tin oxide (ITO)/ metallogel/Aluminium (Al), have been made-up to investigate the electrical properties of the synthesized metallohydrogel materials. Optical characterizations including optical band gap measurement have been carried out using Tauc's equation for both the metallohydrogels. The current-voltage (I-V) characteristics of just made-up devices are studied under irradiation and non- irradiation conditions to explore the electrical features through investigating the charge transport phenomenon. The electrical conductivity gets estimated as 3.13 × 10-5 S.m-1 and 2.69 × 10-5 S.m-1 for MD1 and MD2 under dark condition, and 11.06 × 10-5 S.m-1 and 5.99 × 10-5 S.m-1 for MD1 and MD2, respectively, in photo-irradiation. The measured optical and electrical properties of MD1 and MD2 metallohydrogels are thoroughly investigated and the data indicates that MD1 and MD2 metallohyrogels are semiconducting in nature with excellent photo-responsive behaviour. Moreover, the representative I - V characteristic of the MD1 and MD2 metallohydrogels at both irradiation and non-irradiation conditions represents the nonlinear rectifying behaviour, a typical signature for Schottky diode (SD).

Rational synthesis of a pyridyl-imidazoquinazoline based multifunctional 3D Zn(II)-MOF: structure, luminescence, selective and sensitive detection of Al3+ and TNP, and its semiconducting device application.

In the age of sustainable development, the exploration of multifunctional materials is of high priority due to their economic benefits and environmental suitability. A stable luminescent coordination polymer, [Zn2(tdc)4(pdiq)3] (1), (pdiq = pyridyl-imidazoquinazoline; H2tdc = 2,5-thiophenedicarboxylic acid) has been prepared and structurally confirmed by single-crystal X-ray diffraction analysis. The 3D framework consists of a distorted octahedral geometry with a ZnO4N2 coordination sphere where four carboxylato-O donations come from two tdc2- as bridging ligands and two pyridyl-Ns come from two pdiq. The π⋯π interactions between the imidazolium and phenyl groups bestow robustness on the architecture. The compound is chemically stable to water, shows tolerance to acid/base aqueous solutions (pH = 2-12), and is stable to the impact of organic solvents. The high dispersibility of Zn-MOF (1) in acetonitrile may enhance the fluorescence intensity compared to that in water, which prompted fluorescence measurements in the former solvent and it is used for the efficient and selective turn-off ratiometric sensing of Al3+ ions (LOD, 1.39 × 10-7 M). In addition, the fluorescence emission of 1 is instantly quenched by trinitrophenol (TNP) and the LOD is 1.54 × 10-7 M. The Tauc's plot is used to measure the semiconducting band gap (3.33 eV) and the electrical conductivity is significantly increased upon illumination (Λ: 1.14 × 10-3 S m-1 (dark), 5.35 × 10-3 S m-1 (light)) and the energy barrier declines marginally (FB: 0.57 (dark), 0.49 (light)). Transit time (τ) and diffusion length (LD) at the quasi-Fermi level were analyzed to offer information on the charge transport mechanism of the compound. The better performance on photo-irradiation signifies the enhanced charge transfer kinetics of a Zn-MOF coated thin-film device (TFD 1), which encourages its application in semiconductor devices.