RESUMO
Solution-processed zinc oxide (ZnO) is one of the widely used electron transporting layers (ETLs) for organic solar cells (OSCs). However, low optical transparency along with thickness-sensitivity of ZnO ETL constrains the improvement of photovoltaic performance and large-scale fabrication compatibility. To resolve these issues, zirconium (Zr) doping is applied to tailor the optoelectronic and morphological properties of ZnO layer. This approach not only improves light transmittance with the suppressed parasitic absorption, but also provides an optimized surface morphology for enhancing charge extraction property and reducing potential of charge trap-assisted recombination. By using ZnO:Zr as ETL in inverted device configuration, the maximum power conversion efficiency (PCE) of PM6:Y6:PC71 BM solar cell devices is up to 17.2%, which makes an enhancement of 9.55% compared to ZnO-based devices (15.7%). As the thickness of ZnO:Zr ETL increases to ≈60 nm, the presence of the lower parasitic absorption together with uniform surface morphology can help photovoltaic performance maintain above 15%, which is beyond the performance of the pristine ZnO-based device achieving only 11.9%. Such superiority of ZnO:Zr ETL is also validated by a series of well-known BHJ systems, where in comparison with the devices based on pristine ZnO ETL, a better photovoltaic performance from ZnO:Zr device can be achieved.