Nanofeather ruthenium nitride electrodes for electrochemical capacitors.

Fast charging is a critical concern for the next generation of electrochemical energy storage devices, driving extensive research on new electrode materials for electrochemical capacitors and micro-supercapacitors. Here we introduce a significant advance in producing thick ruthenium nitride pseudocapacitive films fabricated using a sputter deposition method. These films deliver over 0.8 F cm-2 (~500 F cm-3) with a time constant below 6 s. By utilizing an original electrochemical oxidation process, the volumetric capacitance doubles (1,200 F cm-3) without sacrificing cycling stability. This enables an extended operating potential window up to 0.85 V versus Hg/HgO, resulting in a boost to 3.2 F cm-2 (3,200 F cm-3). Operando X-ray absorption spectroscopy and transmission electron microscopy analyses reveal novel insights into the electrochemical oxidation process. The charge storage mechanism takes advantage of the high electrical conductivity and the morphology of cubic ruthenium nitride and Ru phases in the feather-like core, leading to high electrical conductivity in combination with high capacity. Accordingly, we have developed an analysis that relates capacity to time constant as a means of identifying materials capable of retaining high capacity at high charge/discharge rates.

High Capacitance Porous Ruthenium Nitride Films with High Rate Capability for Micro-Supercapacitors.

The demand for high-performance energy storage devices to power Internet of Things applications has driven intensive research on micro-supercapacitors (MSCs). In this study, RuN films made by magnetron sputtering as an efficient electrode material for MSCs are investigated. The sputtering parameters are carefully studied in order to maximize film porosity while maintaining high electrical conductivity, enabling a fast charging process. Using a combination of advanced techniques, the relationships among the morphology, structure, and electrochemical properties of the RuN films are investigated. The films are shown to have a complex structure containing a mixture of crystallized Ru and RuN phases with an amorphous oxide layer. The combination of high electrical conductivity and pseudocapacitive charge storage properties enabled a 16 µm-thick RuN film to achieve a capacitance value of 0.8 F cm-2 in 1 m KOH with ultra-high rate capability.

Advances on Microsupercapacitors: Real Fast Miniaturized Devices toward Technological Dreams for Powering Embedded Electronics?

Microsupercapacitors (MSCs) have emerged as the next generation of electrochemical energy storage sources for powering miniaturized embedded electronic and Internet of Things devices. Despite many advantages such as high-power density, long cycle life, fast charge/discharge rate, and moderate energy density, MSCs are not at the industrial level in 2022, while the first MSC was published more than 20 years ago. MSC performance is strongly correlated to electrode material, device configuration, and the used electrolyte. There are therefore many questions and scientific/technological locks to be overcome in order to raise the technological readiness level of this technology to an industrial stage: the type of electrode material, device topology/configuration, and use of a solid electrolyte with high ionic conductivity and photopatternable capabilities are key parameters that we have to optimize in order to fulfill the requirements. Carbon-based, pseudocapacitive materials such as transition metal oxide, transition metal nitride, and MXene used in symmetric or asymmetric configurations are extensively investigated. In this Review, the current progress toward the fabrication of MSCs is summarized. Challenges and prospectives to improve the performance of MSCs are discussed.