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Skyrmion Hall effect (SkHE) remains an obstacle for the application of magnetic skyrmions. While methods have been established to cancel or compensate SkHE in artificial antiferromagnets and ferrimagnets, eliminating intrinsic SkHE in ferromagnets is still a big challenge. Here, we propose a strategy to eliminate SkHE by intercalating nonmagnetic elements into van der Waals bilayer ferromagnets featuring in-plane ferromagnetism. The in-plane magnetism, along with a delicate balance among exchange interactions, Dzyaloshinskii-Moriya interactions (DMI), and magnetocrystalline anisotropy, creates interlayer bimerons/quadmerons, whose polarity can be controlled by DMI. Opposite DMI in the upper and lower layers results in opposite polarity and topological charge number Q-locking of topological spin texture, therefore, eliminating the SkHE. By intercalating Sr (Ba) in bilayer VSe2, we identify ten topological magnetic structures with zero topological charge number. Furthermore, we present a phase diagram illustrating diverse magnetic configurations achievable within the bimagnetic atomic layer, offering valuable guidance for future investigations.
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Nonvolatile multistate manipulation of two-dimensional (2D) magnetic materials holds promise for low dissipation, highly integrated, and versatile spintronic devices. Here, utilizing density functional theory calculations and Monte Carlo simulations, we report the realization of nonvolatile and multistate control of topological magnetism in monolayer CrI3 by constructing multiferroic heterojunctions with quadruple-well ferroelectric (FE) materials. The Pt2Sn2Te6/CrI3 heterojunction exhibits multiple magnetic phases upon modulating FE polarization states of FE layers and interlayer sliding. These magnetic phases include Bloch-type skyrmions and ferromagnetism, as well as a newly discovered topological magnetic structure. We reveal that the Dzyaloshinskii-Moriya interaction (DMI) induced by interfacial coupling plays a crucial role in magnetic skyrmion manipulation, which aligns with the Fert-Levy mechanism. Moreover, a regular magnetic skyrmion lattice survives when removing a magnetic field, demonstrating its robustness. The work sheds light on an effective approach to nonvolatile and multistate control of 2D magnetic materials.
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Realizating of a low work function (WF) and room-temperature stability in electrides is highly desired for various applications, such as electron emitters, catalysts, and ion batteries. Herein, a criterion based on the electron localization function (ELF) and projected density of states (PDOS) in the vacancy of the oxide electride [Ca24Al28O64]4+(4e-) (C12A7) was adopted to screen out 13 electrides in single-metal oxides. By creating oxygen vacancies in nonelectride oxides, we find out 9 of them showed vacancy-induced anionic electrons. Considering the thermodynamic stability, two electrides with ordered vacancies, Nb3O3 and Ce4O3, stand out and show vacancy-induced zero-dimensional anionic electrons. Both exhibit low WFs, namely 3.1 and 2.3 eV for Nb3O3 and Ce4O3, respectively. In the case of Nb3O3, the ELF at oxygen vacancies decreases first and then increases during the decrease in the total number of electrons in self-consistent calculations due to Nb's multivalent state. Meanwhile, Ce4O3 displays promise for ammonia synthesis due to its low hydrogen diffusion barrier and low activation energy. Further calculations revealed that CeO with disordered vacancies at low concentrations also exhibits electride-like properties, suggesting its potential as a substitute for Ce4O3.
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Correlation of lattice vibrational properties with local atomic configurations in materials is essential for elucidating functionalities that involve phonon transport in solids. Recent developments in vibrational spectroscopy in a scanning transmission electron microscope have enabled direct measurements of local phonon modes at defects and interfaces by combining high spatial and energy resolution. However, pushing the ultimate limit of vibrational spectroscopy in a scanning transmission electron microscope to reveal the impact of chemical bonding on local phonon modes requires extreme sensitivity of the experiment at the chemical-bond level. Here we demonstrate that, with improved instrument stability and sensitivity, the specific vibrational signals of the same substitutional impurity and the neighbouring carbon atoms in monolayer graphene with different chemical-bonding configurations are clearly resolved, complementary with density functional theory calculations. The present work opens the door to the direct observation of local phonon modes with chemical-bonding sensitivity, and provides more insights into the defect-induced physics in graphene.
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Databases for charge-neutral two-dimensional (2D) building blocks (BBs), i.e., 2D materials, have been built for years due to their applications in nanoelectronics. Though lots of solids are constructed from charged 2DBBs, a database for them is still missing. Here, we identify 1028 charged 2DBBs from Materials Project database using a topological-scaling algorithm. These BBs host versatile functionalities including superconductivity, magnetism, and topological properties. We construct layered materials by assembling these BBs considering valence state and lattice mismatch and predict 353 stable layered materials by high-throughput density functional theory calculations. These materials can not only inherit their functionalities but also show enhanced/emergent properties compared with their parent materials: CaAlSiF displays superconducting transition temperature higher than NaAlSi; Na2CuIO6 shows bipolar ferromagnetic semiconductivity and anomalous valley Hall effect that are absent in KCuIO6; LaRhGeO possesses nontrivial band topology. This database expands the design space of functional materials for fundamental research and potential applications.
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All two-dimensional (2D) materials of group IV elements from Si to Pb are stabilized by carrier doping and interface bonding from substrates except graphene which can be free-standing. The involvement of strong hybrid of bonds, adsorption of exotic atomic species, and the high concentration of crystalline defects are often unavoidable, complicating the measurement of the intrinsic properties. In this work, we report the discovery of seven kinds of hitherto unreported bulk compounds (RO)nPb (R = rare earth metals, n = 1,2), which consist of quasi-2D Pb square nets that are spatially and electronically detached from the [RO]δ+ blocking layers. The band structures of these compounds near Fermi levels are relatively clean and dominantly contributed by Pb, resembling the electron-doped free-standing Pb monolayer. The R2O2Pb compounds are metallic at ambient pressure and become superconductors under high pressures with much enhanced critical fields. In particular, Gd2O2Pb (9.1 µB/Gd) exhibits an interesting bulk response of lattice distortion in conjunction with the emergence of superconductivity and magnetic anomalies at a critical pressure of 10 GPa. Our findings reveal the unexpected facets of 2D Pb sheets that are considerably different from their bulk counterparts and provide an alternative route for exploring 2D properties in bulk materials.
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Cobalt-based catalysts have been widely used for Fischer-Tropsch synthesis (FTS) in industry; however, achieving rational catalyst design at the atomic level and thereby a higher activity and more long-chain-hydrocarbon products simultaneously remain an attractive and difficult challenge. The dual-atomic-site catalysts with unique electronic and geometric interface interactions offer a great opportunity for exploiting advanced FTS catalysts with improved performance. Herein, we designed a Ru1Zr1/Co catalyst with Ru and Zr dual atomic sites on the Co nanoparticle (NP) surface through a metal-organic-framework-mediated synthesis strategy which presents greatly enhanced FTS activity (high turnover frequency of 3.8 × 10-2 s-1 at 200 °C) and C5+ selectivity (80.7%). Control experiments presented a synergic effect between Ru and Zr single-atom site on Co NPs. Further density functional theory calculations of the chain growth process from C1 to C5 revealed that the designed Ru/Zr dual sites remarkably lower the rate-limiting barriers due to the significantly weakened C-O bond and promote the chain growth processes, resulting in the greatly boosted FTS performance. Therefore, our work demonstrates the effectiveness of dual-atomic-site design in promoting the FTS performance and provides new opportunities for developing efficient industrial catalysts.
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In twisted h-BN/graphene heterostructures, the complex electronic properties of the fast-traveling electron gas in graphene are usually considered to be fully revealed. However, the randomly twisted heterostructures may also have unexpected transition behaviors, which may influence the device performance. Here, we study the twist-angle-dependent coupling effects of h-BN/graphene heterostructures using monochromatic electron energy loss spectroscopy. We find that the moiré potentials alter the band structure of graphene, resulting in a redshift of the intralayer transition at the M point, which becomes more pronounced up to 0.22 eV with increasing twist angle. Furthermore, the twisting of the Brillouin zone of h-BN relative to the graphene M point leads to tunable vertical transition energies in the range of 5.1-5.6 eV. Our findings indicate that twist-coupling effects of van der Waals heterostructures should be carefully considered in device fabrications, and the continuously tunable interband transitions through the twist angle can serve as a new degree of freedom to design optoelectrical devices.
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Spin spirals (SS) are a special case of noncollinear magnetism, where the magnetic-moment direction rotates along an axis. They have generated interest for novel phenomena, spintronics applications, and their potential formation in monolayers, but the search for monolayers exhibiting SS has not been particularly fruitful. Here, we employ density functional theory calculations to demonstrate that SS form in a recently synthesized monolayer, FeOCl. The SS wavelength and stability can be tuned by doping and uniaxial strain. The SS-state band gap is larger by 0.6 eV compared to the gap of both the ferromagnetic and antiferromagnetic state, enabling bandgap tuning and possibly an unusual formation of quantum wells in a single material via magnetic-field manipulation. The SS-induced out-of-plane ferroelectricity enables switching of the SS chirality by an electric field. Finally, forming heterostructures, for example, with graphene or boron nitride, maintains SS ordering and provides another method of modulation and a potential for magnetoelectric devices.
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The structure of amorphous materials has been debated since the 1930s as a binary question: amorphous materials are either Zachariasen continuous random networks (Z-CRNs) or Z-CRNs containing crystallites. It was recently demonstrated, however, that amorphous diamond can be synthesized in either form. Here we address the question of the structure of single-atom-thick amorphous monolayers. We reanalyze the results of prior simulations for amorphous graphene and report kinetic Monte Carlo simulations based on alternative algorithms. We find that crystallite-containing Z-CRN is the favored structure of elemental amorphous graphene, as recently fabricated, whereas the most likely structure of binary monolayer amorphous BN is altogether different than either of the two long-debated options: it is a compositionally disordered "pseudo-CRN" comprising a mix of B-N and noncanonical B-B and N-N bonds and containing "pseudocrystallites", namely, honeycomb regions made of noncanonical hexagons. Implications for other nonelemental 2D and bulk amorphous materials are discussed.
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Searching for functional square lattices in layered superconductor systems offers an explicit clue to modify the electron behavior and find exotic properties. The trigonal SnAs3 structural units in SnAs-based systems are relatively conformable to distortion, which provides the possibility to achieve structurally topological transformation and higher superconducting transition temperatures. In the present work, the functional As square lattice was realized and activated in Li0.6 Sn2 As2 and NaSnAs through a topotactic structural transformation of trigonal SnAs3 to square SnAs4 under pressure, resulting in a record-high Tc among all synthesized SnAs-based compounds. Meanwhile, the conductive channel transfers from the out-of-plane pz orbital to the in-plane px +py orbitals, facilitating electron hopping within the square 2D lattice and boosting the superconductivity. The reorientation of p-orbital following a directed local structure transformation provides an effective strategy to modify layered superconducting systems.
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Since the advent of graphene ushered the era of 2D materials, many forms of hydrogenated graphene have been reported, exhibiting diverse properties ranging from a tunable bandgap to ferromagnetic ordering. Patterned hydrogenated graphene with micron-scale patterns has been fabricated by lithographic means. Here, successful millimeter-scale synthesis of an intrinsically honeycomb-patterned form of hydrogenated graphene on Ru(0001) by epitaxial growth followed by hydrogenation is reported. Combining scanning tunneling microscopy observations with density-functional-theory (DFT) calculations, it is revealed that an atomic-hydrogen layer intercalates between graphene and Ru(0001). The result is a hydrogen honeycomb structure that serves as a template for the final hydrogenation, which converts the graphene into graphane only over the template, yielding honeycomb-patterned hydrogenated graphene (HPHG). In effect, HPHG is a form of patterned graphane. DFT calculations find that the unhydrogenated graphene regions embedded in the patterned graphane exhibit spin-polarized edge states. This type of growth mechanism provides a new pathway for the fabrication of intrinsically patterned graphene-based materials.
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TiSe_{2} is a layered material exhibiting a commensurate (2×2×2) charge density wave (CDW) with a transition temperature of â¼200 K. Recently, incommensurate CDW in bulk TiSe_{2} draws great interest due to its close relationship with the emergence of superconductivity. Here, we report an incommensurate superstructure in monolayer TiSe_{2}/CuSe/Cu(111) heterostructure. Characterizations by low-energy electron diffraction and scanning tunneling microscopy show that the main wave vector of the superstructure is â¼0.41a^{*} or â¼0.59a^{*} (here a^{*} is in-plane reciprocal lattice constant of TiSe_{2}). After ruling out the possibility of moiré superlattices, according to the correlation of the wave vectors of the superstructure and the large indirect band gap below the Fermi level, we propose that the incommensurate superstructure is associated with an incommensurate charge density wave (I-CDW). It is noteworthy that the I-CDW is robust with a transition temperature over 600 K, much higher than that of commensurate CDW in pristine TiSe_{2}. Based on our data and analysis, we present that interface effect may play a key role in the formation of the I-CDW state.
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Self-assembly of cyclohexyl cyclic (alkyl)(amino)carbenes (cyCAAC) can be realized and reversibly switched from a close-packed trimer phase to a chainlike dimer phase, enabled by the ring-flip of the cyclohexyl wingtip. Multiple methods including scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) calculations identified a distinct isomer (axial or equatorial chair conformer) in each phase, and consequently support the conclusion regarding the determination of molecular surface geometry on the self-assembly of cyCAAC. Moreover, various substrates such as Ag (111) and Cu (111) are tested to elucidate the importance of cyCAAC-surface interactions on cyCAAC based nanopatterns. These investigations of patterned surfaces prompted a deep understanding of cyCAAC binding mode, surface geometry and reversible self-assembly, which are of paramount significance in the areas of catalysis, biosensor design and surface functionalization.
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The in-depth understanding of local atomic environment-property relationships of p-block metal single-atom catalysts toward the 2 e- oxygen reduction reaction (ORR) has rarely been reported. Here, guided by first-principles calculations, we develop a heteroatom-modified In-based metal-organic framework-assisted approach to accurately synthesize an optimal catalyst, in which single In atoms are anchored by combined N,S-dual first coordination and B second coordination supported by the hollow carbon rods (In SAs/NSBC). The In SAs/NSBC catalyst exhibits a high H2 O2 selectivity of above 95 % in a wide range of pH. Furthermore, the In SAs/NSBC-modified natural air diffusion electrode exhibits an unprecedented production rate of 6.49â mol peroxide gcatalyst -1 h-1 in 0.1â M KOH electrolyte and 6.71â mol peroxide gcatalyst -1 h-1 in 0.1â M PBS electrolyte. This strategy enables the design of next-generation high-performance single-atom materials, and provides practical guidance for H2 O2 electrosynthesis.
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Van der Waals (vdW) heterojunctions constructed by vertical stacking two-dimensional transition metal dichalcogenides hold exciting promise in realizing future atomically thin electronic and optoelectronic devices. Recently, a Janus WSSe structure has been successfully synthesized by using chemical vapor deposition, selective epitaxy atomic replacement, and pulsed laser deposition methods. Herein, based on first-principles calculations, we introduce the structures and performances of MoS2/WSSe vdW heterojunctions with different interfaces and stacking modes. The vdW heterojunctions possess indirect band gaps for S-S interfaces, while direct band gaps for Se-S interfaces. Besides, the potential drop indicates an efficient separation of photogenerated charges. Interestingly, the opposite built-in electric fields formed in the vdW heterojunctions with a S-S interface and a Se-S interface suggest different charge transfer paths, which would motivate further theoretical and experimental investigations on charge transfer dynamics. Moreover, the electronic property is adjustable by applying external in-plane strains, accomplishing with indirect to direct bandgap transition and semiconductor to metal transition. The findings are helpful for the design of multi-functional high-performance electronic and optoelectronic devices based on the MoS2/WSSe vdW heterojunctions.
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Opening a band gap in bilayer graphene (BLG) is of significance for potential applications in graphene-based electronic and photonic devices. Here, we report the generation of a sizable band gap in BLG by intercalating silicene between BLG and Ru substrate. We first grow high-quality Bernal-stacked BLG on Ru(0001) and then intercalate silicene to the interface between the BLG and Ru, which is confirmed by low-energy electron diffraction and scanning tunneling microscopy. Raman spectroscopy shows that the G and 2D peaks of the intercalated BLG are restored to the freestanding-BLG features. Angle-resolved photoelectron spectroscopy measurements show that a band gap of about 0.2 eV opens in the BLG. Density functional theory calculations indicate that the large-gap opening results from a cooperative contribution of the doping and rippling/strain in the BLG. This work provides insightful understanding on the mechanism of band gap opening in BLG and enhances the potential of graphene-based device development.
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Graphene on SiO2 enables fabrication of Si-technology-compatible devices, but a transfer of these devices from other substrates and direct growth have severe limitations due to a relatively small grain size or device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for electronic devices, on an insulating SiO2 film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO2 film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (â¼1 nm) crystalline or thicker (â¼2 nm) amorphous SiO2 has been produced. The insulating nature of the thick amorphous SiO2 is verified by transport measurements. The device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within in situ fabricated Hall bar devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in electronics.
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Combining solution-based and surface-assisted synthesis, we demonstrate the first synthesis of NBN-doped bis-tetracene (NBN-BT) and peri-tetracene (NBN-PT). The chemical structures are clearly elucidated by high-resolution scanning tunneling microscopy (STM) in combination with noncontact atomic force microscopy (nc-AFM). Scanning tunneling spectroscopy (STS) characterizations reveal that NBN-BT and NBN-PT possess higher energy gaps than bis-tetracene and peri-tetracene. Interestingly, NBN-BT can undergo stepwise one-electron oxidation and convert into its corresponding radical cation and then to its dication. The energy gap of the NBN-BT dication is similar to that of bis-tetracene, indicating their isoelectronic relationship. Moreover, a similar energy gap between the NBN-PT dication and peri-tetracene can be predicted by DFT calculations. This work provides a novel synthesis along with characterizations of multi-NBN-doped zigzag-edged peri-acenes with tunable electronic properties.
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We report an Ag1 single-atom catalyst (Ag1 /MnO2 ), which was synthesized from thermal transformation of Ag nanoparticles (NPs) and surface reconstruction of MnO2 . The evolution process of Ag NPs to single atoms is firstly revealed by various techniques, including inâ situ ETEM, inâ situ XRD and DFT calculations. The temperature-induced surface reconstruction process from the MnO2 (211) to (310) lattice plane is critical to firmly confine the existing surface of Ag single atoms; that is, the thermal treatment and surface reconstruction of MnO2 is the driving force for the formation of single Ag atoms. The as-obtained Ag1 /MnO2 achieved 95.7 % Faradic efficiency at -0.85â V vs. RHE, and coupled with long-term stability for electrochemical CO2 reduction reaction (CO2 RR). DFT calculations indicated single Ag sites possessed high electronic density close to Fermi Level and could act exclusively as the active sites in the CO2 RR. As a result, the Ag1 /MnO2 catalyst demonstrated remarkable performance for the CO2 RR, far surpassing the conventional Ag nanosized catalyst (AgNP /MnO2 ) and other reported Ag-based catalysts.