Controllable Synthesis of Transferable Ultrathin Bi2Ge(Si)O5 Dielectric Alloys with Composition-Tunable High-κ Properties.

Two-dimensional (2D) alloys hold great promise to serve as important components of 2D transistors, since their properties allow continuous regulation by varying their compositions. However, previous studies are mainly limited to the metallic/semiconducting ones as contact/channel materials, but very few are related to the insulating dielectrics. Here, we use a facile one-step chemical vapor deposition (CVD) method to synthesize ultrathin Bi2SixGe1-xO5 dielectric alloys, whose composition is tunable over the full range of x just by changing the relative ratios of the GeO2/SiO2 precursors. Moreover, their dielectric properties are highly composition-tunable, showing a record-high dielectric constant of >40 among CVD-grown 2D insulators. The vertically grown nature of Bi2GeO5 and Bi2SixGe1-xO5 enables polymer-free transfer and subsequent clean van der Waals integration as the high-κ encapsulation layer to enhance the mobility of 2D semiconductors. Besides, the MoS2 transistors using Bi2SixGe1-xO5 alloy as gate dielectrics exhibit a large Ion/Ioff (>108), ideal subthreshold swing of ∼61 mV/decade, and a small gate hysteresis (∼5 mV). Our work not only gives very few examples on controlled CVD growth of insulating dielectric alloys but also expands the family of 2D single-crystalline high-κ dielectrics.

A Universal Synthesis Strategy for Lanthanide Sulfide Nanocrystals with Efficient Photocatalytic Hydrogen Production.

As an important lanthanide (Ln)-based functional materials, the Ln chalcogenides possess unique properties and various applications. However, the controllable synthesis of Ln chalcogenide nanocrystals still faces great challenges because of the rather poor affinity between Ln and chalcogenide ions (S, Se, Te) as well as strong preference of combination with existed oxygen. Herein, a facile but general heterogeneous nucleation synthetic strategy is established toward a series of colloidal ternary Cu Ln sulfides nanocrystals using the Ln dithiocarbamates and CuI as precursors. To extend this synthetic protocol, similar strategy is used to prepare six kinds of high quality CuLnS2 nanocrystals, while the bulk ones are only obtained by the traditional solid-state reaction at rigorous condition. Importantly, high-entropy nanocrystals CuLnS2 and CuEux Ln2-x S3 which contain six Ln elements (Nd, Sm, Gd, Tb, Dy) are readily obtained by the co-decomposed process attributed to their similar diffusion speed. As a proof-of-concept application, CuEu2 S3 nanocrystals showed efficient photocatalytic hydrogen production properties.

Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric.

Single-crystalline high-κ dielectric materials are desired for the development of future two-dimensional (2D) electronic devices. However, curent 2D gate insulators still face challenges, such as insufficient dielectric constant and difficult to obtain free-standing and transferrable ultrathin films. Here, we demonstrate that ultrathin Bi2SiO5 crystals grown by chemical vapor deposition (CVD) can serve as excellent gate dielectric layers for 2D semiconductors, showing a high dielectric constant (>30) and large band gap (~3.8 eV). Unlike other 2D insulators synthesized via in-plane CVD on substrates, vertically grown Bi2SiO5 can be easily transferred onto other substrates by polymer-free mechanical pressing, which greatly facilitates its ideal van der Waals integration with few-layer MoS2 as high-κ dielectrics and screening layers. The Bi2SiO5 gated MoS2 field-effect transistors exhibit an ignorable hysteresis (~3 mV) and low drain induced barrier lowering (~5 mV/V). Our work suggests vertically grown Bi2SiO5 nanoflakes as promising candidates to improve the performance of 2D electronic devices.

Solar Hydrogen Production from Cost Effective Stannic Oxide Under Visible Light Irradiation.

Visible-light-driven stannic oxide was synthesized by facile one-pot solvothermal method from SnCl2·2H2O and methanol. The as-prepared powder was identified by XRD as the low crystalline phase of SnO2, and its absorption edge reached about 530 nm, presenting good potential to respond to visible light. Under visible light irradiation (λ > 420 nm), the as-prepared tin oxide showed good anodic photocurrent effects on FTO photoelectrode, and showed hydrogen and oxygen evolution activities under electron donor (methanol) and acceptor (AgNO3), respectively, even without any co-catalyst loading. The visible-light-driven mechanism for this SnO2-x maybe ascribed to Sn2+ self-doped into Sn4+ and formed an energy gap between the band gap of SnO2.