Distinguishing Different Stackings in Layered Materials via Luminescence Spectroscopy.

Despite its simple crystal structure, layered boron nitride features a surprisingly complex variety of phonon-assisted luminescence peaks. We present a combined experimental and theoretical study on ultraviolet-light emission in hexagonal and rhombohedral bulk boron nitride crystals. Emission spectra of high-quality samples are measured via cathodoluminescence spectroscopy, displaying characteristic differences between the two polytypes. These differences are explained using a fully first-principles computational technique that takes into account radiative emission from "indirect," finite-momentum excitons via coupling to finite-momentum phonons. We show that the differences in peak positions, number of peaks, and relative intensities can be qualitatively and quantitatively explained, once a full integration over all relevant momenta of excitons and phonons is performed.

Sublattice Dependence and Gate Tunability of Midgap and Resonant States Induced by Native Dopants in Bernal-Stacked Bilayer Graphene.

The properties of semiconductors can be crucially impacted by midgap states induced by dopants, which can be native or intentionally incorporated in the crystal lattice. For Bernal-stacked bilayer graphene (BLG), which has a tunable band gap, the existence of midgap states induced by dopants or adatoms has been investigated theoretically and observed indirectly in electron transport experiments. Here, we characterize BLG midgap states in real space, with atomic-scale resolution with scanning tunneling microscopy and spectroscopy. We show that the midgap states in BLG-for which we demonstrate gate tunability-appear when the dopant is hosted on the nondimer sublattice sites. We further evidence the presence of narrow resonances at the onset of the high-energy bands (valence or conduction, depending on the dopant type) when the dopants lie on the dimer sublattice sites. Our results are supported by tight-binding calculations that agree remarkably well with the experimental findings.

Momentum-Resolved Dielectric Response of Free-Standing Mono-, Bi-, and Trilayer Black Phosphorus.

Black phosphorus (BP), a 2D semiconducting material of interest in electronics and photonics, exhibits physical properties characterized by strong anisotropy and band gap energy that scales with reducing layer number. However, the investigation of its intrinsic properties is challenging because thin-layer BP is photo-oxidized under ambient conditions and the energy of its electronic states shifts in different dielectric environments. We prepared free-standing samples of few-layer BP under glovebox conditions and probed the dielectric response in a vacuum using scanning transmission electron microscopy and electron energy loss spectroscopy (STEM-EELS). Thresholds of the excitation energy are measured at 1.9, 1.4, and 1.1 eV for the mono-, bi-, and trilayer BP, respectively, and these values are used to estimate the corresponding optical band gaps. A comparison of our results with electronic structure calculations indicates that the variation of the quasi-particle gap is larger than that of the exciton binding energy. The dispersion of the plasmons versus momentum for one- to three-layer BP and bulk BP highlights a deviation from parabolic to linear dispersion and strong anisotropic fingerprints.

Bright Luminescence from Indirect and Strongly Bound Excitons in h-BN.

A quantitative analysis of the excitonic luminescence efficiency in hexagonal boron nitride (h-BN) is carried out by cathodoluminescence in the ultraviolet range and compared with zinc oxide and diamond single crystals. A high quantum yield value of ∼50% is found for h-BN at 10 K comparable to that of direct band-gap semiconductors. This bright luminescence at 215 nm remains stable up to room temperature, evidencing the strongly bound character of excitons in bulk h-BN. Ab initio calculations of the exciton dispersion confirm the indirect nature of the lowest-energy exciton whose binding energy is found equal to 300±50 meV, in agreement with the thermal stability observed in luminescence. The direct exciton is found at a higher energy but very close to the indirect one, which solves the long debated Stokes shift in bulk h-BN.

Interdependency of subsurface carbon distribution and graphene-catalyst interaction.

The dynamics of the graphene-catalyst interaction during chemical vapor deposition are investigated using in situ, time- and depth-resolved X-ray photoelectron spectroscopy, and complementary grand canonical Monte Carlo simulations coupled to a tight-binding model. We thereby reveal the interdependency of the distribution of carbon close to the catalyst surface and the strength of the graphene-catalyst interaction. The strong interaction of epitaxial graphene with Ni(111) causes a depletion of dissolved carbon close to the catalyst surface, which prevents additional layer formation leading to a self-limiting graphene growth behavior for low exposure pressures (10(-6)-10(-3) mbar). A further hydrocarbon pressure increase (to ∼10(-1) mbar) leads to weakening of the graphene-Ni(111) interaction accompanied by additional graphene layer formation, mediated by an increased concentration of near-surface dissolved carbon. We show that growth of more weakly adhered, rotated graphene on Ni(111) is linked to an initially higher level of near-surface carbon compared to the case of epitaxial graphene growth. The key implications of these results for graphene growth control and their relevance to carbon nanotube growth are highlighted in the context of existing literature.

Structural Size Effect in Capped Metallic Nanoparticles.

The surfactant used during a colloidal synthesis is known to control the size and shape of metallic nanoparticles. However, its influence on the nanoparticle (NP) structure is still not well understood. In this study, we show that the surfactant can significantly modify the lattice parameter of a crystalline particle. First, our electron diffraction measurements reveals that NiPt nanoparticles around 4 nm in diameter covered by a mixture of oleylamine and oleic acid (50:50) display a lattice parameter expansion around 2% when compared to the same particles without surfactant. Using high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and energy-dispersive X-ray spectroscopy (EDX) techniques, we show that this expansion can not be explained by crystal defects, twinning, oxidation, or atoms insertion. Then, using covered NPs in the 4-22 nm size range, we show that the lattice parameter evolves linearly with the inverse of the NP size, as it is expected when a surface stress is present. Finally, the study is extended to pure nickel and pure platinum NPs, with different sizes, coated by different surfactants (oleylamine, trioctylphosphine, polyvinylpyrrolidone). The surfactants induce lattice parameter variations, whose magnitude could be related to the charge transfer between the surfactant and the particle surface.

Entropy-driven stability of chiral single-walled carbon nanotubes.

Single-walled carbon nanotubes are hollow cylinders that can grow centimeters long via carbon incorporation at the interface with a catalyst. They display semiconducting or metallic characteristics, depending on their helicity, which is determined during their growth. To support the quest for a selective synthesis, we develop a thermodynamic model that relates the tube-catalyst interfacial energies, temperature, and the resulting tube chirality. We show that nanotubes can grow chiral because of the configurational entropy of their nanometer-sized edge, thus explaining experimentally observed temperature evolutions of chiral distributions. Taking the chemical nature of the catalyst into account through interfacial energies, we derive structural maps and phase diagrams that will guide a rational choice of a catalyst and growth parameters toward a better selectivity.

Dimensionality effects on the luminescence properties of hBN.

Cathodoluminescence (CL) experiments at low temperature have been undertaken on various bulk and exfoliated hexagonal boron nitride (hBN) samples. Different bulk crystals grown from different synthesis methods have been studied. All of them present the same so-called S series in the 5.6-6 eV range, proving its intrinsic character. Luminescence spectra of flakes containing 100 down to 6 layers have been recorded. Strong modifications in the same UV range are observed and discussed within the general framework of 2D exciton properties in lamellar crystals.

Electronic interaction between nitrogen atoms in doped graphene.

Many potential applications of graphene require either the possibility of tuning its electronic structure or the addition of reactive sites on its chemically inert basal plane. Among the various strategies proposed to reach these objectives, nitrogen doping, i.e., the incorporation of nitrogen atoms in the carbon lattice, leads in most cases to a globally n-doped material and to the presence of various types of point defects. In this context, the interactions between chemical dopants in graphene have important consequences on the electronic properties of the systems and cannot be neglected when interpreting spectroscopic data or setting up devices. In this report, the structural and electronic properties of complex doping sites in nitrogen-doped graphene have been investigated by means of scanning tunneling microscopy and spectroscopy, supported by density functional theory and tight-binding calculations. In particular, based on combined experimental and simulation works, we have systematically studied the electronic fingerprints of complex doping configurations made of pairs of substitutional nitrogen atoms. Localized bonding states are observed between the Dirac point and the Fermi level in contrast with the unoccupied state associated with single substitutional N atoms. For pyridinic nitrogen sites (i.e., the combination of N atoms with vacancies), a resonant state is observed close to the Dirac energy. This insight into the modifications of electronic structure induced by nitrogen doping in graphene provides us with a fair understanding of complex doping configurations in graphene, as it appears in real samples.

Charge transfer and electronic doping in nitrogen-doped graphene.

Understanding the modification of the graphene's electronic structure upon doping is crucial for enlarging its potential applications. We present a study of nitrogen-doped graphene samples on SiC(000) combining angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and spectroscopy and X-ray photoelectron spectroscopy (XPS). The comparison between tunneling and angle-resolved photoelectron spectra reveals the spatial inhomogeneity of the Dirac energy shift and that a phonon correction has to be applied to the tunneling measurements. XPS data demonstrate the dependence of the N 1s binding energy of graphitic nitrogen on the nitrogen concentration. The measure of the Dirac energy for different nitrogen concentrations reveals that the ratio usually computed between the excess charge brought by the dopants and the dopants' concentration depends on the latter. This is supported by a tight-binding model considering different values for the potentials on the nitrogen site and on its first neighbors.

Identification of nitrogen dopants in single-walled carbon nanotubes by scanning tunneling microscopy.

Using scanning tunnelling microscopy and spectroscopy, we investigated the atomic and electronic structure of nitrogen-doped single walled carbon nanotubes synthesized by chemical vapor deposition. The insertion of nitrogen in the carbon lattice induces several types of point defects involving different atomic configurations. Spectroscopic measurements on semiconducting nanotubes reveal that these local structures can induce either extended shallow levels or more localized deep levels. In a metallic tube, a single doping site associated with a donor state was observed in the gap at an energy close to that of the first van Hove singularity. Density functional theory calculations reveal that this feature corresponds to a substitutional nitrogen atom in the carbon network.

Nickel-assisted healing of defective graphene.

The healing of graphene grown from a metallic substrate is investigated using tight-binding Monte Carlo simulations. At temperatures (ranging from 1000 to 2500 K), an isolated graphene sheet can anneal a large number of defects suggesting that their healings are thermally activated. We show that in the presence of a nickel substrate we obtain a perfect graphene layer. The nickel-carbon chemical bonds keep breaking and reforming around defected carbon zones, providing a direct interaction, necessary for the healing. Thus, the action of Ni atoms is found to play a key role in the reconstruction of the graphene sheet by annealing defects.

Early stages in the nucleation process of carbon nanotubes.

The early stages of carbon nanotube nucleation are investigated using field ion/electron microscopy along with in situ local chemical probing of a single nanosized nickel crystal. To go beyond experiments, tight-binding Monte Carlo simulations are performed on oriented Ni slabs. Real-time field electron imaging demonstrates a carbon-induced increase of the number density of steps in the truncated vertices of a polyhedral Ni nanoparticle. The necessary diffusion and step-site trapping of adsorbed carbon atoms are observed in the simulations and precede the nucleation of graphene-based sheets in these steps. Chemical probing of selected nanofacets of the Ni crystal reveals the occurrence of Cn (n=1-4) surface species. Kinetic studies prove C2+ species are formed from C1 with a delay time of several milliseconds at 623 K. Carbon dimers, C2, must not necessarily be formed on the Ni surface. Tight-binding Monte Carlo simulations reveal the high stability of such dimers in the first layer beneath the surface.