Conductivity fluctuations in proton-implanted ZnO microwires.

Electric noise can be an important limitation for applications of conducting elements in the nanometer size range. The intrinsic electrical noise of prospective materials for opto-spintronics applications like ZnO has not yet been characterized. In this study, we have investigated the conductivity fluctuations in 10 nm thick current paths produced by proton implantation of ZnO microwires at room temperature. The voltage noise under a constant dc current bias in undoped, as well as in Li-doped microwires, is characterized by [Formula: see text] power spectra with [Formula: see text]. The noise intensity scales with the square of the bias current pointing to bias-independent resistivity fluctuations as a source of the observed noise. The normalized power spectral density appears inversely proportional to the number of carriers in the probed sample volume, in agreement with the phenomenological Hooge law. For the proton-implanted ZnO microwire and at 1 Hz we obtain a normalized power spectral density as low as [Formula: see text] Hz(-1).

Large local Hall effect in pin-hole dominated multigraphene spin-valves.

We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during magnetic field sweeping similar to the signal observed due to spin injection into multigraphene. The switching behavior has been explained in terms of a local Hall effect due to a thickness irregularity of the tunnel barrier. The local Hall effect appears due to a large local magnetostatic field produced near the roughness in the AlO(x) tunnel barrier. In our samples the resistance change due to the local Hall effect remains negligibly small above 75 K. A strong local Hall effect might hinder spin injection into multigraphene, resulting in no spin signal in non-local measurements.

Quantum oscillations and ferromagnetic hysteresis observed in iron filled multiwall carbon nanotubes.

We report on the electrical transport properties of single multiwall carbon nanotubes with and without an iron filling as a function of temperature and magnetic field. For the iron filled nanotubes the magnetoresistance shows a magnetic behavior induced by iron, which can be explained by taking into account a contribution of s-d hybridization. In particular, ferromagnetic-like hysteresis loops were observed up to 50 K for the iron filled multiwall carbon nanotubes. The magnetoresistance shows quantum interference phenomena such as universal conductance fluctuations and weak localization effects.

An alternative route towards micro- and nano-patterning of oxide films.

This paper presents a method to obtain submicron- and nanometer structures of different oxide films and heterostructures combining e-beam lithography and chemical etching. The most relevant advantage of this method is that structures of tens of microns in length and below ∼100 nm width can be produced, keeping the intrinsic bulk film properties, as proven by electrical transport measurements. In this way our method provides a bridge that connects the attractive properties of oxide films and the nanoworld.

Tailoring magnetic interlayer coupling in La0.7Sr0.3MnO3/SrRuO3 superlattices.

The magnetic interlayer coupling in La0.7Sr0.3MnO3/SrRuO3 superlattices was investigated. High quality superlattices with ultrathin La0.7Sr0.3MnO3 and SrRuO3 layers were fabricated by pulsed laser deposition. The superlattices grew coherently with Mn/Ru intermixing restricted to about one interfacial monolayer. Strong antiferromagnetic interlayer coupling depended delicately on magnetocrystalline anisotropy and intermixing at interfaces. Ab initio calculations elucidated that the antiferromagnetic coupling is mediated by the Mn-O-Ru bond. The theoretical calculations allowed for a quantitative correlation between the total magnetic moment of the superlattice and the degree of Mn/Ru intermixing.

The influence of Ga(+) irradiation on the transport properties of mesoscopic conducting thin films.

We studied the influence of 30 keV Ga(+)-ions-commonly used in focused-ion-beam (FIB) devices-on the transport properties of thin crystalline graphite flakes, and La(0.7)Ca(0.3)MnO(3) and Co thin films. The changes in electrical resistance were measured in situ during irradiation and also the temperature and magnetic field dependence before and after irradiation. Our results show that the transport properties of these materials strongly change at Ga(+) fluences much below those used for patterning and ion-beam-induced deposition (IBID), seriously limiting the use of FIB when the intrinsic properties of the materials of interest are of importance. We present a method that can be used to protect the sample as well as to produce selectively irradiation-induced changes.

Vectorial calibration of superconducting magnets with a quantum magnetic sensor.

Cryogenic vector magnet systems make it possible to study the anisotropic magnetic properties of materials without mechanically rotating the sample but by electrically tilting and turning the magnetic field. Vector magnetic fields generated inside superconducting vector magnets are generally measured with three Hall sensors. These three probes must be calibrated over a range of temperatures, and the temperature-dependent calibrations cannot be easily carried out inside an already magnetized superconducting magnet because of remaining magnetic fields. A single magnetometer based on an ensemble of nitrogen vacancy (NV) centers in diamond is proposed to overcome these limitations. The quenching of the photoluminescence intensity emitted by NV centers can determine the field in the remanent state of the solenoids and allows an easy and fast canceling of the residual magnetic field. Once the field is reset to zero, the calibration of this magnetometer can be performed in situ by a single measurement of an optically detected magnetic resonance spectrum. Thereby, these magnetometers do not require any additional temperature-dependent calibrations outside the magnet and offer the possibility to measure vector magnetic fields in three dimensions with a single sensor. Its axial alignment is given by the crystal structure of the diamond host, which increases the accuracy of the field orientation measured with this sensor, compared to the classical arrangement of three Hall sensors. It is foreseeable that the magnetometer described here has the potential to be applied in various fields in the future, such as the characterization of ferromagnetic core solenoids or other magnetic arrangements.

Transport properties and atomic structure of ion-beam-deposited W, Pd and Pt nanostructures.

We investigate the atomic structure and transport properties as a function of temperature (T) and applied magnetic field (H) of ion-beam-induced deposition (IBID) of tungsten, palladium and platinum micrometer and nanometer sized thin films and wires. The samples show a non-metallic behavior due to the low metallic content. Electron diffraction at room temperature reveals that the samples are amorphous (W, Pt) and polycrystalline (Pd). The temperature and magnetic field dependence of the samples reveal a behavior similar to that found in disordered or granular conductors. The resistivity rho decreases with T following a function of the type rho(T) = a-bT(alpha)+cT(-beta) (alpha,beta > or = 0) and the magnetoresistance of all samples shows a scaling of the form [rho(H,T)-rho(0,T)]/rho(0,T) = f(H/C(T)), with a temperature-and sample-dependent parameter C(T).

Unconventional Magnetization below 25 K in Nitrogen-doped Diamond provides hints for the existence of Superconductivity and Superparamagnetism.

The magnetization of nitrogen-doped single crystalline diamond bulk samples shows unconventional field and temperature hysteresis loops at T [Formula: see text] 25 K. The results suggest the existence of superparamagnetic and superconducting regions in samples with nitrogen concentration <200 ppm. Both phases vanish at temperatures above 25 K where the samples show diamagnetic behavior similar to undoped diamond. The observation of superparamagnetism and superconductivity is attributed to the nitrogen doping and to the existence of defective regions. From particle-induced X-ray emission with ppm resolution we rule out that the main observations below 25 K are due to magnetic impurities. We investigated also the magnetic properties of ferromagnetic/high-temperature superconducting oxide bilayers. The magnetization results obtained from those bilayers show remarkable similarities to the ones in nitrogen-doped diamond.

Transport properties and growth parameters of PdC and WC nanowires prepared in a dual-beam microscope.

In this work we investigate the electrical transport properties and growth conditions of tungsten carbon (WC) and palladium carbon (PdC) nanostructures on Si substrates using a focused ion beam and scanning electron microscope. In situ energy dispersive x-ray (EDX) characterizations reveal that electron-beam-induced WC and PdC nanostructure depositions (EBID) show a lower metal concentration (below 3% atomic percentage) than in ion-beam-induced deposition (IBID) (above 20%). In the case of PdC the growth pattern and the Pd/C content were optimized by adjusting the deposition temperature of the precursor material. In situ measurements of the resistivity of the nanostructures as a function of thickness reveal a minimum at a thickness approximately 200 nm. The lowest resistivity obtained for the PdC and WC structures is two orders of magnitude higher than the corresponding bulk values for pure Pd and W. The EBID samples show a non-metallic behaviour due to the low metal content. The temperature and magnetic field dependence of the IBID structures reveal a behaviour similar to disordered or granular conductors. The upper critical field and critical current density of the WC structures were measured below the superconducting critical temperature of approximately 5 K.

Study of the negative magneto-resistance of single proton-implanted lithium-doped ZnO microwires.

The magneto-transport properties of single proton-implanted ZnO and of Li(7%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7%) doped ZnO microwires showed a non-monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non-magnetic heterostructure in the wire after proton implantation.

Can doping graphite trigger room temperature superconductivity? Evidence for granular high-temperature superconductivity in water-treated graphite powder.

Granular superconductivity in powders of small graphite grains (several tens of micrometers) is demonstrated after treatment with pure water. The temperature, magnetic field and time dependence of the magnetic moment of the treated graphite powder provides evidence for the existence of superconducting vortices with some similarities to high-temperature granular superconducting oxides but even at temperatures above 300 K. Room temperature superconductivity in doped graphite or at its interfaces appears to be possible.

Magnetite (Fe3O4): a new variant of relaxor multiferroic?

The electric polarization, dielectric permittivity, magnetoelectric effect, heat capacity, magnetization and ac susceptibility of magnetite films and polycrystals were investigated. The electric polarization of magnetite films with saturation values between 4 and 8 µC cm(-2) was found to vanish between 32 and 38 K, but in polycrystals no phase transition was detected in this range by heat capacity. Both types of samples showed magnetoelectric effects at low temperatures below a frequency-dependent crossover. This is interpreted as arising from multiferroic relaxor behavior.

Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO3 bilayer.

We have investigated exchange bias effects in bilayers composed of the antiferromagnetic o-YMnO(3) and ferromagnetic Co thin film by means of SQUID magnetometry, magnetoresistance, anisotropic magnetoresistance and the planar Hall effect. The magnetization and magneto-transport properties show pronounced asymmetries in the field and magnetization axes of the field hysteresis loops. Both exchange bias parameters, the exchange bias field H(E)(T) as well as the magnetization shift M(E)(T), vanish around the Néel temperature T(N) =/~ 45 K. We show that the magnetization shift M(E)(T) is also measured by a shift in the anisotropic magnetoresistance and planar Hall resistance having a similar temperature dependence as the one obtained from magnetization measurements. Because the o-YMnO(3) film is highly insulating, our results demonstrate that the M(E)(T) shift originates at the interface within the ferromagnetic Co layer. To show that the main results obtained are general and not because of some special characteristics of the o-YMO(3) layer, similar measurements were done in Co/CoO micro-wires. The transport and magnetization characterization of the micro-wires supports the main conclusion that these effects are related to the response of the ferromagnetic Co layer at the interface.

Disordered electrical potential observed on the surface of SiO2 by electric field microscopy.

The electrical potential on the surface of ∼300 nm thick SiO(2) grown on single-crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to ∼0.4 V within regions of 1 µm. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.