Fast energy relaxation of hot carriers near the Dirac point of graphene.

We investigate energy relaxation of hot carriers in monolayer and bilayer graphene devices, demonstrating that the relaxation rate increases significantly as the Dirac point is approached from either the conduction or valence band. This counterintuitive behavior appears consistent with ideas of charge puddling under disorder, suggesting that it becomes very difficult to excite carriers out of these localized regions. These results therefore demonstrate how the peculiar properties of graphene extend also to the behavior of its nonequilibrium carriers.

Direct imaging of electron states in open quantum dots.

We use scanning gate microscopy to probe the ballistic motion of electrons within an open GaAs/AlGaAs quantum dot. Conductance maps are recorded by scanning a biased tip over the open quantum dot while a magnetic field is applied. We show that, for specific magnetic fields, the measured conductance images resemble the classical transmitted and backscattered trajectories and their quantum mechanical analogue. In addition, we prove experimentally, with this direct measurement technique, the existence of pointer states. The demonstrated direct imaging technique is essential for the fundamental understanding of wave function scarring and quantum decoherence theory.

Effect of top dielectric medium on gate capacitance of graphene field effect transistors: implications in mobility measurements and sensor applications.

We have carried out Hall measurement on back-gated graphene field effect transistors (FET) with and without a top dielectric medium. The gate efficiency increases by up to 2 orders of magnitude in the presence of a high κ top dielectric medium, but the mobility does not change significantly. Our measurement further shows that the back-gate capacitance is enhanced dramatically by the top dielectric medium, and the enhancement increases with the size of the top dielectric medium. Our work strongly suggests that the previously reported top dielectric medium-induced charge transport properties of graphene FETs are possibly due to the increase of gate capacitance, rather than enhancement of carrier mobility.

Periodic scarred States in open quantum dots as evidence of quantum Darwinism.

Scanning gate microscopy (SGM) is used to image scar structures in an open quantum dot, which is created in an InAs quantum well by electron-beam lithography and wet etching. The scanned images demonstrate periodicities in magnetic field that correlate to those found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dot that replicate through the modes in direct agreement with quantum Darwinism.

Regulation of HMG-CoA reductase degradation requires the P-type ATPase Cod1p/Spf1p.

The integral ER membrane protein HMG-CoA reductase (HMGR) is a key enzyme of the mevalonate pathway from which sterols and other essential molecules are produced. HMGR degradation occurs in the ER and is regulated by mevalonate-derived signals. Little is known about the mechanisms responsible for regulating HMGR degradation. The yeast Hmg2p isozyme of HMGR undergoes regulated degradation in a manner very similar to mammalian HMGR, allowing us to isolate mutants deficient in regulating Hmg2p stability. We call these mutants cod mutants for the control of HMG-CoA reductase degradation. With this screen, we have identified the first gene of this class, COD1, which encodes a P-type ATPase and is identical to SPF1. Our data suggested that Cod1p is a calcium transporter required for regulating Hmg2p degradation. This role for Cod1p is distinctly different from that of the well-characterized Ca(2+) P-type ATPase Pmr1p which is neither required for Hmg2p degradation nor its control. The identification of Cod1p is especially intriguing in light of the role Ca(2+) plays in the regulated degradation of mammalian HMGR.

Studies of electron-phonon and phonon-phonon interactions in InN using ultrafast Raman spectroscopy.

Subpicosecond time-resolved Raman spectroscopy has been employed to investigate electron-phonon interactions and phonon dynamics in InN. The electron-longitudinal optical phonon scattering rate and the decay dynamics of longitudinal optical phonons in InN have been directly measured. Our results indicate that hot-phonon effects can play an important role in the electron relaxation and transport in InN. The carrier dependence of the lifetime of the longitudinal optical phonons has also been measured. The results suggest that more theoretical work is needed to account for the dependence of the lifetime of longitudinal optical phonons on the photoexcited carrier density.

Intrinsic mobility in graphene.

Recent studies have shown that a high K dielectric solvent screens the impurities for room temperature transport in graphene and the mobility has been found to increase by orders of magnitude. This gives what is probably the intrinsic, phonon limited mobility at room temperature, and we have confirmed this with simulation. Mobility as high as 44 000 cm(2) V(-1) s(-1) was achieved. At very low density, impurity scattering still is the determining factor for mobility, but this is significantly reduced in the recent experiments due to the dielectric screening. At high density, impurity scattering becomes negligible.

Subband anticrossing and the spin Hall effect in quantum wires.

We report on numerical simulations of the intrinsic spin Hall effect in semiconductor quantum wires as a function of the Rashba spin-orbit coupling strength, the electron density, and the width of the wire. We find that the strength of the spin Hall effect does not depend monotonically on these parameters, but instead exhibits a local maximum. This behavior is explained by considering the dispersion relation of the electrons in the wire, which is characterized by the anticrossing of adjacent subbands. These results lead to a simple estimate of the optimal wire width for spin Hall transport experiments, and simulations indicate that this optimal width is independent of disorder. The anticrossing of adjacent subbands is related to a quantum phase transition in momentum space, and is accompanied by an enhancement of the Berry curvature and subsequently in the magnitude of the spin Hall effect.

Imaging scarred states in quantum dots.

We have used the scanning gate microscopy technique to image scar structures in an open quantum dot, fabricated in an InAs quantum well and defined by electron beam lithography. These are shown to have a periodicity in magnetic field that correlates with that found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dots.

Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors.

High electron mobility transistors (HEMTs) have become important for high frequency and low noise applications. There are devices now operating with a cutoff frequency, f(T), of several 100 GHz. Through simulation, we have been investigating how these frequencies may be pushed even higher, and have found that it may be possible to achieve an f(T) of over 3 THz. For this, we have used a full-band, cellular Monte Carlo transport program, coupled to a full Poisson solver, to study a variety of InAs-rich, InGaAs pseudomorphic HEMTs and their response at high frequency, concentrating on devices with a structure (from the substrate) InP/InAlAs/InGaAs/InAlAs/InGaAs, with the quantum well composed of In(0.75)Ga(0.25)As. We have studied gate lengths over the range 10-70 nm and various source-drain spacings. The performance of scaled devices has been evaluated to determine the ultimate frequency limit. Here, the importance of the effective gate length has been evaluated from the properties internal to the device.

Negative Differential Conductance & Hot-Carrier Avalanching in Monolayer WS2 FETs.

The high field phenomena of inter-valley transfer and avalanching breakdown have long been exploited in devices based on conventional semiconductors. In this Article, we demonstrate the manifestation of these effects in atomically-thin WS2 field-effect transistors. The negative differential conductance exhibits all of the features familiar from discussions of this phenomenon in bulk semiconductors, including hysteresis in the transistor characteristics and increased noise that is indicative of travelling high-field domains. It is also found to be sensitive to thermal annealing, a result that we attribute to the influence of strain on the energy separation of the different valleys involved in hot-electron transfer. This idea is supported by the results of ensemble Monte Carlo simulations, which highlight the sensitivity of the negative differential conductance to the equilibrium populations of the different valleys. At high drain currents (>10 µA/µm) avalanching breakdown is also observed, and is attributed to trap-assisted inverse Auger scattering. This mechanism is not normally relevant in conventional semiconductors, but is possible in WS2 due to the narrow width of its energy bands. The various results presented here suggest that WS2 exhibits strong potential for use in hot-electron devices, including compact high-frequency sources and photonic detectors.

Conductance fluctuations in high mobility monolayer graphene: Nonergodicity, lack of determinism and chaotic behavior.

We have fabricated a high mobility device, composed of a monolayer graphene flake sandwiched between two sheets of hexagonal boron nitride. Conductance fluctuations as functions of a back gate voltage and magnetic field were obtained to check for ergodicity. Non-linear dynamics concepts were used to study the nature of these fluctuations. The distribution of eigenvalues was estimated from the conductance fluctuations with Gaussian kernels and it indicates that the carrier motion is chaotic at low temperatures. We argue that a two-phase dynamical fluid model best describes the transport in this system and can be used to explain the violation of the so-called ergodic hypothesis found in graphene.

Signatures of dynamical tunneling in semiclassical quantum dots.

We study transport in large, and strongly open, quantum dots, which might typically be viewed as lying well within the semiclassical regime. The low-temperature magnetoresistance of these structures exhibits regular fluctuations, with just a small number of dominant frequency components, indicative of the presence of dynamical tunneling into regular orbits. Support for these ideas is provided by the results of numerical simulations, which reveal wave function scarring by classically inaccessible orbits, which is found to persist even in the presence of a moderately disordered dot potential. Our results suggest that dynamical tunneling may play a more generic role in transport through mesoscopic structures than has thus far been appreciated.

Scanning gate imaging of a disordered quantum point contact.

Scanning gate microscopy (SGM) is a novel technique that has been used to image characteristic features related to the coherent electron flow in mesoscopic structures. For instance, SGM has successfully been applied to study peculiar electron transport properties that arise due to small levels of disorder in a system. The particular case of an InGaAs quantum well layer in a heterostructure, which is dominated by a quasi-ballistic regime, was analyzed. A quantum point contact fabricated onto this material exhibits conduction fluctuations that are not expected in typical high-mobility heterostructures such as AlGaAs/GaAs. SGM revealed not only interference patterns corresponding to specific conductance fluctuations but also mode-dependent resistance peaks corresponding to the first and second quantum levels of conductance (2e(2)/h) at zero magnetic field. On the other hand, clear conductance plateaus originating from the integer quantum Hall effect were observed at high magnetic fields. The physical size of incompressible edge channels was estimated from cross-sectional analysis of these images.

Conductance fluctuations in semiconductor nanostructures.

Conductance fluctuations have been seen in semiconductors and graphene for quite some time. It has generally been believed that a universality existed in which the conductance variance was the same for variations in energy and magnetic field, although some experiments have questioned this view. Here, we use numerical simulations to show that fluctuations in magneto-conductance are typically smaller than those in energy by as much as a factor of 3. Moreover, the amplitude of the fluctuations in each case varies with the strength of the random potential.

Physical scales in the Wigner-Boltzmann equation.

The Wigner-Boltzmann equation provides the Wigner single particle theory with interactions with bosonic degrees of freedom associated with harmonic oscillators, such as phonons in solids. Quantum evolution is an interplay of two transport modes, corresponding to the common coherent particle-potential processes, or to the decoherence causing scattering due to the oscillators. Which evolution mode will dominate depends on the scales of the involved physical quantities. A dimensionless formulation of the Wigner-Boltzmann equation is obtained, where these scales appear as dimensionless strength parameters. A notion called scaling theorem is derived, linking the strength parameters to the coupling with the oscillators. It is shown that an increase of this coupling is equivalent to a reduction of both the strength of the electric potential, and the coherence length. Secondly, the existence of classes of physically different, but mathematically equivalent setups of the Wigner-Boltzmann evolution is demonstrated.

Open quantum dots: II. Probing the classical to quantum transition.

Open quantum dots provide a natural system in which to study both classical and quantum features of transport. From the classical point of view these dots possess a mixed phase space which yields families of closed, regular orbits as well as an expansive sea of chaos. An important question concerns the manner in which these classical states evolve into the set of quantum states that populate the dot in the quantum limit. In the reverse direction, the manner in which the quantum states evolve to the classical world is governed strongly by Zurek's decoherence theory. This was discussed from the quantum perspective in an earlier review (Ferry et al 2011 Semicond. Sci. Technol. 26 043001). Here, we discuss the nature of the various classical states, how they are formed, how they progress to the quantum world, and the signatures that they create in magnetotransport and general conductance studies of these dots.

Anisotropic intrinsic spin Hall effect in quantum wires.

We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of the wire, and that the nature of this anisotropy depends strongly on the electron density and the relative strengths of the Rashba and Dresselhaus spin-orbit couplings. In particular, at low densities, when only one subband of the quantum wire is occupied, the spin Hall effect is strongest for electron momentum along the [N110] axis, which is the opposite of what is expected for the purely 2D case. In addition, when more than one subband is occupied, the strength and anisotropy of the spin Hall effect can vary greatly over relatively small changes in electron density, which makes it difficult to predict which wire orientation will maximize the strength of the spin Hall effect. These results help to illuminate the role of quantum confinement in spin-orbit-coupled systems, and can serve as a guide for future experimental work on the use of quantum wires for spin-Hall-based spintronic applications.

Velocity saturation in intrinsic graphene.

We study the transport of carriers in intrinsic graphene by means of an ensemble Monte Carlo technique. Scattering by acoustic and optical phonons dominates the transport. We find that velocity 'saturation' sets in at relatively low values of the electric field, but that the value is dependent upon the carrier density. Velocity overshoot is also observed to occur in these simulations.

Regular conductance fluctuations indicative of quasi-ballistic transport in bilayer graphene.

Quasi-periodic conductance fluctuations are observed in the low-temperature magneto-conductance of a bilayer graphene sample. The quasi-periodic nature of the fluctuations is confirmed by their Fourier power spectrum, which consists of just a small number of dominant frequency components. From an experimental study of these features, which are highly reminiscent of those reported previously for ballistic semiconductor quantum dots, we suggest that they are associated with the formation of an open quantum dot in the submicron graphene sample.