Enhancing the thermoelectric properties of Sr1- xPr2 x/3□ x/3TiO3± δ through control of crystal structure and microstructure.

A-site deficient perovskites are among the most important n-type thermoelectric oxides. Ceramics of Sr1- xPr2 x/3□ x/3TiO3 ( x = 0.1-1.0) were prepared by solid-state reaction at 1700-1723 K using highly reducing atmospheres. Samples with the highest Sr content had a cubic crystal structure [Formula: see text]; incorporating Pr with A-site vacancies led to a reduction in symmetry to tetragonal ( I4/mcm) and then orthorhombic ( Cmmm) crystal structures. HRTEM showed Pr2/3TiO3 had a layered structure with alternating fully and partially occupied A-sites and a short-range order along the (100) direction. Electrical conductivity was highest in samples of high symmetry ( x ≤ 0.40), where the microstructures featured core-shell and domain structures. This enabled a very high power factor of approximately 1.75 × 10-3 W m-1 K-2 at 425 K. By contrast, at high Pr content, structural distortion led to reduced electron transport; enhanced phonon scattering (from mass contrast, local strain and cation-vacancy ordering) led to reduced, glass-like, thermal conductivity. Carbon burial sintering increased the oxygen deficiency leading to increased carrier concentration, a maximum power factor of approximately 1.80 × 10-3 W m-1 K-2 at 350 K and thermoelectric figure of merit of 0.26 at 865 K. The paper demonstrates the importance of controlling both crystal structure and microstructure to enhance thermoelectric performance. This article is part of a discussion meeting issue 'Energy materials for a low carbon future'.

Prospects for Engineering Thermoelectric Properties in La1/3NbO3 Ceramics Revealed via Atomic-Level Characterization and Modeling.

A combination of experimental and computational techniques has been employed to explore the crystal structure and thermoelectric properties of A-site-deficient perovskite La1/3NbO3 ceramics. Crystallographic data from X-ray and electron diffraction confirmed that the room temperature structure is orthorhombic with Cmmm as a space group. Atomically resolved imaging and analysis showed that there are two distinct A sites: one is occupied with La and vacancies, and the second site is fully unoccupied. The diffuse superstructure reflections observed through diffraction techniques are shown to originate from La vacancy ordering. La1/3NbO3 ceramics sintered in air showed promising high-temperature thermoelectric properties with a high Seebeck coefficient of S1 = -650 to -700 µV/K and a low and temperature-stable thermal conductivity of k = 2-2.2 W/m·K in the temperature range of 300-1000 K. First-principles electronic structure calculations are used to link the temperature dependence of the Seebeck coefficient measured experimentally to the evolution of the density of states with temperature and indicate possible avenues for further optimization through electron doping and control of the A-site occupancies. Moreover, lattice thermal conductivity calculations give insights into the dependence of the thermal conductivity on specific crystallographic directions of the material, which could be exploited via nanostructuring to create high-efficiency compound thermoelectrics.

Tungsten Bronze Barium Neodymium Titanate (Ba(6-3n)Nd(8+2n)Ti(18)O(54)): An Intrinsic Nanostructured Material and Its Defect Distribution.

We investigated the structure of the tungsten bronze barium neodymium titanates Ba(6-3n)Nd(8+2n)Ti(18)O(54), which are exploited as microwave dielectric ceramics. They form a complex nanostructure, which resembles a nanofilm with stacking layers of ∼12 Šthickness. The synthesized samples of Ba(6-3n)Nd(8+2n)Ti(18)O(54) (n = 0, 0.3, 0.4, 0.5) are characterized by pentagonal and tetragonal columns, where the A cations are distributed in three symmetrically inequivalent sites. Synchrotron X-ray diffraction and electron energy loss spectroscopy allowed for quantitative analysis of the site occupancy, which determines the defect distribution. This is corroborated by density functional theory calculations. Pentagonal columns are dominated by Ba, and tetragonal columns are dominated by Nd, although specific Nd sites exhibit significant concentrations of Ba. The data indicated significant elongation of the Ba columns in the pentagonal positions and of the Nd columns in tetragonal positions involving a zigzag arrangement of atoms along the b lattice direction. We found that the preferred Ba substitution occurs at Nd[3]/[4] followed by Nd[2] and Nd[1]/[5] sites, which is significantly different to that proposed in earlier studies. Our results on the Ba(6-3n)Nd(8+2n)Ti(18)O(54) "perovskite" superstructure and its defect distribution are particularly valuable in those applications where the optimization of material properties of oxides is imperative; these include not only microwave ceramics but also thermoelectric materials, where the nanostructure and the distribution of the dopants will reduce the thermal conductivity.

Non-rigid registration and non-local principle component analysis to improve electron microscopy spectrum images.

Image registration and non-local Poisson principal component analysis (PCA) denoising improve the quality of characteristic x-ray (EDS) spectrum imaging of Ca-stabilized Nd2/3TiO3 acquired at atomic resolution in a scanning transmission electron microscope. Image registration based on the simultaneously acquired high angle annular dark field image significantly outperforms acquisition with a long pixel dwell time or drift correction using a reference image. Non-local Poisson PCA denoising reduces noise more strongly than conventional weighted PCA while preserving atomic structure more faithfully. The reliability of and optimal internal parameters for non-local Poisson PCA denoising of EDS spectrum images is assessed using tests on phantom data.

Tuning the thermoelectric properties of A-site deficient SrTiO3 ceramics by vacancies and carrier concentration.

Ceramics based on Sr0.8La0.067Ti0.8Nb0.2O3-δ have been prepared by the mixed oxide route. The La1/3NbO3 component generates ∼13.4% A-site vacancies; this was fixed for all samples. Powders were sintered under air and reducing conditions at 1450 to 1700 K; products were of high density (>90% theoretical). Processing under reducing conditions led to the formation of a Ti1-xNbxO2-y second phase, core-shell structures and oxygen deficiency. X-ray diffraction (XRD) confirmed a simple cubic structure with space group Pm3[combining macron]m. Transmission electron microscopy revealed a high density of dislocations while analytical scanning transmission electron microscopy at atomic resolution demonstrated a uniform distribution of La, Nb and vacancies in the lattice. X-ray photoemission spectroscopy and thermogravimetry showed the oxygen deficiency (δ value) to be ∼0.08 in reduced samples with enhanced carrier concentrations ∼2 × 1021 cm-3. Both carrier concentration and carrier mobility increased with sintering time, giving a maximum figure of merit (ZT) of 0.25. Selective additional doping by La or Nb, with no additional A site vacancies, led to the creation of additional carriers and reduced electrical resistivity. Together these led to enhanced ZT values of 0.345 at 1000 K. The contributions from oxygen vacancies and charge carriers have been investigated independently.

Facile Surfactant-Free Synthesis of p-Type SnSe Nanoplates with Exceptional Thermoelectric Power Factors.

A surfactant-free solution methodology, simply using water as a solvent, has been developed for the straightforward synthesis of single-phase orthorhombic SnSe nanoplates in gram quantities. Individual nanoplates are composed of {100} surfaces with {011} edge facets. Hot-pressed nanostructured compacts (Eg ≈0.85 eV) exhibit excellent electrical conductivity and thermoelectric power factors (S(2) σ) at 550 K. S(2) σ values are 8-fold higher than equivalent materials prepared using citric acid as a structure-directing agent, and electrical properties are comparable to the best-performing, extrinsically doped p-type polycrystalline tin selenides. The method offers an energy-efficient, rapid route to p-type SnSe nanostructures.

Thermoelectric Performance of Tetrahedrite (Cu12Sb4S13) Thin Films: The Influence of the Substrate and Interlayer.

In the present work, tetrahedrite Cu12Sb4S13 thin films were deposited on various substrates via aerosol-assisted chemical vapor deposition (AACVD) using diethyldithiocarbamate complexes as precursors. A buffer layer of Sb2O3 with a small lattice mismatch to Cu12Sb4S13 was applied to one of the glass substrates to improve the quality of the deposited thin film. The buffer layer increased the coverage of the Cu12Sb4S13 thin film, resulting in improved electrical transport properties. The growth of the Cu12Sb4S13 thin films on the other substrates, including ITO-coated glass, a SiO2-coated Si wafer, and mica, was also investigated. Compared to the films grown on the other substrates, the Cu12Sb4S13 thin film deposited on the SiO2-coated Si wafer showed a dense and compact microstructure and a larger grain size (qualities that are beneficial for carrier transport), yielding a champion power factor (PF) of ∼362 µW cm-1 K-2 at 625 K. The choice of substrate strongly influenced the composition, microstructure, and electrical transport properties of the deposited Cu12Sb4S13 thin film. At 460 K, the highest zT value that was obtained for the thin films was ∼0.18. This is comparable to values reported for Cu-Sb-S bulk materials at the same temperature. Cu12Sb4S13 thin films deposited using AACVD are promising for thermoelectric applications. To the best of our knowledge, the first full thermoelectric characterization of the Cu12Sb4S13 thin film is performed in this work.

Exceptional Thermoelectric Performance of Cu2(Zn,Fe,Cd)SnS4 Thin Films.

High-quality Cu2(Zn,Fe,Cd)SnS4 (CZFCTS) thin films based on the parent CZTS were prepared by aerosol-assisted chemical vapor deposition (AACVD). Substitution of Zn by Fe and Cd significantly improved the electrical transport properties, and monophasic CZFCTS thin films exhibited a maximum power factor (PF) of ∼0.22 µW cm-1 K-2 at 575 K. The quality and performance of the CZFCTS thin films were further improved by postdeposition annealing. CZFCTS thin films annealed for 24 h showed a significantly enhanced maximum PF of ∼2.4 µW cm-1 K-2 at 575 K. This is higher than all reported values for single-phase quaternary sulfide (Cu2BSnS4, B = Mn, Fe, Co, Ni) thin films and even exceeds the PF for most polycrystalline bulk materials of these sulfides. Density functional theory (DFT) calculations were performed to understand the impact of Cd and Fe substitution on the electronic properties of CZTS. It was predicted that CZFCTS would have a smaller band gap than CZTS and a higher density of states (DoS) near the Fermi level. The thermal conductivity and thermoelectric figure of merit (zT) of the CZFCTS thin films have been evaluated, yielding an estimated maximum zT range of 0.18-0.69 at 550 K. The simple processing route and improved thermoelectric performance make CZFCTS thin films extremely promising for thermoelectric energy generation.

Precursor-Led Grain Boundary Engineering for Superior Thermoelectric Performance in Niobium Strontium Titanate.

We present a novel method to significantly enhance the thermoelectric performance of ceramics in the model system SrTi0.85Nb0.15O3 through the use of the precursor ammonium tetrathiomolybdate (0.5-2% w/w additions). After sintering the precursor-infused green body at 1700 K for 24 h in 5% H2/Ar, single-crystal-like electron transport behavior developed with electrical conductivity reaching ∼3000 S/cm at ∼300 K, almost a magnitude higher than that in the control sample. During processing, the precursor transformed into MoS2, then into MoOx, and finally into Mo particles. This limited grain growth promoted secondary phase generation but importantly helped to reduce the grain boundary barriers. Samples prepared with additions of the precursor exhibited vastly increased electrical conductivity, without significant impact on Seebeck coefficients giving rise to high power factor values of 1760 µW/mK2 at ∼300 K and a maximum thermoelectric figure-of-merit zT of 0.24 at 823 K. This processing strategy provides a simple method to achieve high charge mobility in polycrystalline titanate and related materials and with the potential to create "phonon-glass-electron-crystal" oxide thermoelectric materials.

Enhanced Thermoelectric Performance of Tin(II) Sulfide Thin Films Prepared by Aerosol Assisted Chemical Vapor Deposition.

Orthorhombic SnS exhibits excellent thermoelectric performance as a consequence its relatively high Seebeck coefficient and low thermal conductivity. In the present work, polycrystalline orthorhombic SnS thin films were prepared by aerosol-assisted chemical vapor deposition (AACVD) using the single source precursor dibutyl-bis(diethyldithiocarbamato)tin(IV) [Sn(C4H9)2(S2CN(C2H5)2)2]. We examined the effects of the processing parameters on the composition, microstructure, and electrical transport properties of the SnS films. Deposition temperature dominates charge transport; the room temperature electrical conductivity increased from 0.003 to 0.19 S·cm-1 as deposition temperature increased from 375 to 445 °C. Similarly, the maximum power factor (PF) increased with deposition temperature, reaching ∼0.22 µW·cm-1·K-2 at 570 K. The power factors for SnS films deposited by AACVD are higher than values from earlier work on SnS bulks and SnS/SnSe films at temperatures up to 520 K. The electronic structure and electrical transport properties of SnS were investigated using density-functional theory to provide an improved understanding of the materials performance. To the best of our knowledge, the thermal conductivity (κ) of SnS film was measured for the first time allowing the figure of merit (zT) for SnS film to be evaluated. A relatively low thermal conductivity of ∼0.41 W·m-1·K-1 was obtained at 550 K for SnS films deposited at 445 °C; the corresponding zT value was ∼0.026. The SnS films are good candidates for thermoelectric applications and AACVD is a promising technique for the preparation of high-performance thermoelectric films.

High Power Factor Nb-Doped TiO2 Thermoelectric Thick Films: Toward Atomic Scale Defect Engineering of Crystallographic Shear Structures.

Donor-doped TiO2-based materials are promising thermoelectrics (TEs) due to their low cost and high stability at elevated temperatures. Herein, high-performance Nb-doped TiO2 thick films are fabricated by facile and scalable screen-printing techniques. Enhanced TE performance has been achieved by forming high-density crystallographic shear (CS) structures. All films exhibit the same matrix rutile structure but contain different nano-sized defect structures. Typically, in films with low Nb content, high concentrations of oxygen-deficient {121} CS planes are formed, while in films with high Nb content, a high density of twin boundaries are found. Through the use of strongly reducing atmospheres, a novel Al-segregated {210} CS structure is formed in films with higher Nb content. By advanced aberration-corrected scanning transmission electron microscopy techniques, we reveal the nature of the {210} CS structure at the nano-scale. These CS structures contain abundant oxygen vacancies and are believed to enable energy-filtering effects, leading to simultaneous enhancement of both the electrical conductivity and Seebeck coefficients. The optimized films exhibit a maximum power factor of 4.3 × 10-4 W m-1 K-2 at 673 K, the highest value for TiO2-based TE films at elevated temperatures. Our modulation strategy based on microstructure modification provides a novel route for atomic-level defect engineering which should guide the development of other TE materials.

Controlling the Thermoelectric Behavior of La-Doped SrTiO3 through Processing and Addition of Graphene Oxide.

The addition of graphene has been reported as a potential route to enhance the thermoelectric performance of SrTiO3. However, the interplay between processing parameters and graphene addition complicates understanding this enhancement. Herein, we examine the effects of processing parameters and graphene addition on the thermoelectric performance of La-doped SrTiO3 (LSTO). Briefly, two types of graphene oxide (GO) at different oxidation degrees were used, while the LSTO pellets were densified under two conditions with different reducing strengths (with/without using oxygen-scavenging carbon powder bed muffling). Raman imaging of the LSTO green body and sintered pellets suggests that the added GO sacrificially reacts with the lattice oxygen, which creates more oxygen vacancies and improves electrical conductivity regardless of the processing conditions. The addition of mildly oxidized electrochemical GO (EGO) yields better performance than the conventional heavily oxidized chemical GO (CGO). Moreover, we found that muffling the green body with an oxygen-scavenging carbon powder bed during sintering is vital to achieving a single-crystal-like temperature dependence of electrical conductivity, implying that a highly reducing environment is critical for eliminating the grain boundary barriers. Combining 1.0 wt % EGO addition with a highly reducing environment leads to the highest electrical conductivity of 2395 S cm-1 and power factor of 2525µW m-1 K-2 at 300 K, with an improved average zT value across the operating temperature range of 300-867 K. STEM-EELS maps of the optimized sample show a pronounced depletion of Sr and evident deficiency of O and La at the grain boundary region. Theoretical modeling using a two-phase model implies that the addition of GO can effectively improve carrier mobility in the grain boundary phase. This work provides guidance for the development of high-performance thermoelectric ceramic oxides.

Tin-Substituted Chalcopyrite: An n-Type Sulfide with Enhanced Thermoelectric Performance.

The dearth of n-type sulfides with thermoelectric performance comparable to that of their p-type analogues presents a problem in the fabrication of all-sulfide devices. Chalcopyrite (CuFeS2) offers a rare example of an n-type sulfide. Chemical substitution has been used to enhance the thermoelectric performance of chalcopyrite through preparation of Cu1-x Sn x FeS2 (0 ≤ x ≤ 0.1). Substitution induces a high level of mass and strain field fluctuation, leading to lattice softening and enhanced point-defect scattering. Together with dislocations and twinning identified by transmission electron microscopy, this provides a mechanism for scattering phonons with a wide range of mean free paths. Substituted materials retain a large density-of-states effective mass and, hence, a high Seebeck coefficient. Combined with a high charge-carrier mobility and, thus, high electrical conductivity, a 3-fold improvement in power factor is achieved. Density functional theory (DFT) calculations reveal that substitution leads to the creation of small polarons, involving localized Fe2+ states, as confirmed by X-ray photoelectron spectroscopy. Small polaron formation limits the increase in carrier concentration to values that are lower than expected on electron-counting grounds. An improved power factor, coupled with substantial reductions (up to 40%) in lattice thermal conductivity, increases the maximum figure-of-merit by 300%, to zT ≈ 0.3 at 673 K for Cu0.96Sn0.04FeS2.

Modulation of Charge Transport at Grain Boundaries in SrTiO3: Toward a High Thermoelectric Power Factor at Room Temperature.

Modulation of the grain boundary properties in thermoelectric materials that have thermally activated electrical conductivity is crucial in order to achieve high performance at low temperatures. In this work, we show directly that the modulation of the potential barrier at the grain boundaries in perovskite SrTiO3 changes the low-temperature dependency of the bulk material's electrical conductivity. By sintering samples in a reducing environment of increasing strength, we produced La0.08Sr0.9TiO3 (LSTO) ceramics that gradually change their electrical conductivity behavior from thermally activated to single-crystal-like, with only minor variations in the Seebeck coefficient. Imaging of the surface potential by Kelvin probe force microscopy found lower potential barriers at the grain boundaries in the LSTO samples that had been processed in the more reducing environments. A theoretical model using the band offset at the grain boundary to represent the potential barrier agreed well with the measured grain boundary potential dependency of conductivity. The present work showed an order of magnitude enhancement in electrical conductivity (from 85 to 1287 S cm-1) and power factor (from 143 to 1745 µW m-1 K-2) at 330 K by this modulation of charge transport at grain boundaries. This significant reduction in the impact of grain boundaries on charge transport in SrTiO3 provides an opportunity to achieve the ultimate "phonon glass electron crystal" by appropriate experimental design and processing.

Controlling the Thermoelectric Properties of Nb-Doped TiO2 Ceramics through Engineering Defect Structures.

Donor-doped TiO2 ceramics are promising high-temperature oxide thermoelectrics. Highly dense (1 - x)TiO2-xNb2O5 (0.005 ≤ x ≤ 0.06) ceramics were prepared by a single-step, mixed-oxide route under reducing conditions. The microstructures contained polygonal-shaped grains with uniform grain size distributions. Subgrain structures were formed in samples with low Nb contents by the interlacing of rutile and higher-order Magnéli phases, reflecting the high density of shear planes and oxygen vacancies. Samples prepared with a higher Nb content showed no subgrain structures but high densities of planar defects and lower concentrations of oxygen vacancies. Through optimizing the concentration of point defects and line defects, the carrier concentration and electrical conductivity were enhanced, yielding a much improved power factor of 5.3 × 10-4 W m-1 K-2 at 823 K; lattice thermal conductivity was significantly reduced by enhanced phonon scattering. A low, temperature-stable thermal conductivity of 2.6 W m-1 K-1 was achieved, leading to a ZT value of 0.17 at 873 K for compositions with x = 0.06, the highest ZT value reported for single Nb-doped TiO2 ceramics without the use of spark plasma sintering (SPS). We demonstrate the control of the thermoelectric properties of Nb-doped TiO2 ceramics through the development of balanced defect structures, which could guide the development of future oxide thermoelectric materials.

Enhancing the Thermoelectric Performance of Calcium Cobaltite Ceramics by Tuning Composition and Processing.

Calcium cobaltite (Ca3Co4O9) is a promising p-type thermoelectric oxide material. Here, we present an approach to optimize the thermoelectric performance of Ca3Co4O9 by controlling the chemical composition and fabrication process. Ca3-xBixCo3.92O9+δ (0.1 ≤ x ≤ 0.3) and Ca2.7Bi0.3CoyO9+δ (3.92 ≤ y ≤ 4.0) ceramics were prepared by Spark Plasma Sintering (SPS). Stoichiometric mixtures of raw materials were combined and calcined at 1203 K for 12 h, followed by SPS at 1023 K for 5 min at 50 MPa. The samples were subsequently annealed at 1023 or 1203 K for 12 h in air. XRD and HRTEM analyses confirmed the formation of the cobaltite misfit phase with minor amounts of secondary phases; SEM-EDS showed the presence of Bi-rich and Co-rich secondary phases. After annealing at 1203 K, the secondary phases were significantly reduced. By controlling the cobalt deficiency and level of bismuth substitution, the electrical conductivity was enhanced without degrading Seebeck coefficients, promoting a high power factor of 0.34 mW m-1 K-2 at 823 K (parallel to the ab planes, //ab). Due to enhanced phonon scattering, the thermal conductivity was reduced by 20%. As a result, a highly competitive ZT(//ab) of 0.16 was achieved for Ca2.7Bi0.3Co3.92O9+δ ceramics at 823 K.

Self-Nanostructuring in SrTiO3: A Novel Strategy for Enhancement of Thermoelectric Response in Oxides.

Nanostructuring is recognized as an efficient route for enhancing thermoelectric response. Here, we report a new synthesis strategy for nanostructuring oxide ceramics and demonstrate its effectiveness on an important n-type thermoelectric SrTiO3. Ceramics of Sr0.9La0.1TiO3 with additions of B2O3 were synthesized by the mixed oxide route. Samples were sintered in air followed by annealing in a reducing atmosphere. Crystallographic data from X-ray and electron diffraction showed Pm3̅m cubic symmetry for all the samples. High-resolution transmission electron microscopy (HRTEM) showed the formation of a core-shell type structure within the grains for the annealed ceramics. The cores contain nanosize features comprising pairs of nanosize voids and particles; the feature sizes depend on annealing time. Atomic-resolution, high-angle annular-dark-field imaging and electron energy loss spectroscopy in the scanning transmission electron microscopy (STEM-HAADF-EELS) showed the particles to be rich in Ti and the areas around the voids to contain high concentrations of Ti3+. Additionally, dislocations were observed, with significantly higher densities in the shell areas. The observed dislocations are combined (100) and (110) edge dislocations. The major impact of the core-shell type microstructures, with nanosize inclusions, is the reduction of the thermal conductivity. Sr0.9La0.1TiO3 ceramics containing grain boundary shells of size ≈ 1 µm and inclusions in the core of 60-80 nm exhibit a peak power factor of 1600 µW/m·K2 at 540 K; at 1000 K, they exhibit a low thermal conductivity (2.75 W/m·K) and a power factor of 1050 µW/m·K2 leading to a high of ZT of 0.39 ± 0.03. This is the highest ZT reported so far for Sr0.9La0.1TiO3 based-compositions. This nanostructuring strategy should be readily applicable to other functional oxides.

Managing dose-, damage- and data-rates in multi-frame spectrum-imaging.

As an instrument, the scanning transmission electron microscope is unique in being able to simultaneously explore both local structural and chemical variations in materials at the atomic scale. This is made possible as both types of data are acquired serially, originating simultaneously from sample interactions with a sharply focused electron probe. Unfortunately, such scanned data can be distorted by environmental factors, though recently fast-scanned multi-frame imaging approaches have been shown to mitigate these effects. Here, we demonstrate the same approach but optimized for spectroscopic data; we offer some perspectives on the new potential of multi-frame spectrum-imaging (MFSI) and show how dose-sharing approaches can reduce sample damage, improve crystallographic fidelity, increase data signal-to-noise, or maximize usable field of view. Further, we discuss the potential issue of excessive data-rates in MFSI, and demonstrate a file-compression approach to significantly reduce data storage and transmission burdens.

Concurrent La and A-Site Vacancy Doping Modulates the Thermoelectric Response of SrTiO3: Experimental and Computational Evidence.

To help understand the factors controlling the performance of one of the most promising n-type oxide thermoelectric SrTiO3, we need to explore structural control at the atomic level. In Sr1-xLa2x/3TiO3 ceramics (0.0 ≤ x ≤ 0.9), we determined that the thermal conductivity can be reduced and controlled through an interplay of La-substitution and A-site vacancies and the formation of a layered structure. The decrease in thermal conductivity with La and A-site vacancy substitution dominates the trend in the overall thermoelectric response. The maximum dimensionless figure of merit is 0.27 at 1070 K for composition x = 0.50 where half of the A-sites are occupied with La and vacancies. Atomic resolution Z-contrast imaging and atomic scale chemical analysis show that as the La content increases, A-site vacancies initially distribute randomly (x < 0.3), then cluster (x ≈ 0.5), and finally form layers (x = 0.9). The layering is accompanied by a structural phase transformation from cubic to orthorhombic and the formation of 90° rotational twins and antiphase boundaries, leading to the formation of localized supercells. The distribution of La and A-site vacancies contributes to a nonuniform distribution of atomic scale features. This combination induces temperature stable behavior in the material and reduces thermal conductivity, an important route to enhancement of the thermoelectric performance. A computational study confirmed that the thermal conductivity of SrTiO3 is lowered by the introduction of La and A-site vacancies as shown by the experiments. The modeling supports that a critical mass of A-site vacancies is needed to reduce thermal conductivity and that the arrangement of La, Sr, and A-site vacancies has a significant impact on thermal conductivity only at high La concentration.