Origin of the apparent delocalization of the conduction band in a high-mobility amorphous semiconductor.

In this paper, we show that the apparent delocalization of the conduction band reported from first-principles simulations for the high-mobility amorphous oxide semiconductor [Formula: see text] (a-IGZO) is an artifact induced by the periodic conditions imposed to the model. Given a sufficiently large unit-cell dimension (over 40 Å), the conduction band becomes localized. Such a model size is up to four times the size of commonly used models for the study of a-IGZO. This finding challenges the analyses done so far on the nature of the defects and on the interpretation of numerous electrical measurements. In particular, we re-interpret the meaning of the computed effective mass reported so far in literature. Our finding also applies to materials such as SiZnSnO, ZnSnO, InZnSnO, In2O3 or InAlZnO4 whose models have been reported to display a fully delocalized conduction band in the amorphous phase.

Nanoimprinted semiconducting polymer films with 50 nm features and their application to organic heterojunction solar cells.

Nanoimprint lithography is used to directly pattern the conjugated polymer semiconductor poly(3-hexylthiophene) (P3HT). We obtain trenches with aspect ratios up to 2 and feature sizes as small as 50 nm in this polymer. The application to organic solar cells is shown by creating an interpenetrated donor-acceptor interface, based on P3HT and N,N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C(13)), deposited from the vapor phase to reduce shadow effects. A planarizing layer of spin-coated zinc oxide (ZnO) nanoparticles is used to reduce the roughness of the layer stack. The response of the photovoltaic devices follows the increased interface area, up to a 2.5-fold enhancement.