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1.
Nano Lett ; 23(16): 7364-7370, 2023 Aug 23.
Artigo em Inglês | MEDLINE | ID: mdl-37530420

RESUMO

Gallium oxide (Ga2O3) has attracted extensive attention as a potential candidate for low-dimensional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to its wide bandgap, controllable doping, and low cost. The structural stability of nanoscale Ga2O3 is the key parameter for designing and constructing a MOSFET, which however remains unexplored. Using in situ transmission electron microscopy, we reveal the size-dependent phase transition of sub-2 nm Ga2O3 nanowires. Based on theoretical calculations, the transformation pathways from the initial monoclinic ß-phase to an intermediate cubic γ-phase and then back to the ß-phase have been mapped and identified as a sequence of Ga cation migrations. Our results provide fundamental insights into the Ga2O3 phase stability within the nanoscale, which is crucial for advancing the miniaturization, light weight, and integration of wide-bandgap semiconductor devices.

2.
Phys Rev Lett ; 123(21): 216101, 2019 Nov 22.
Artigo em Inglês | MEDLINE | ID: mdl-31809167

RESUMO

The phase stability of ZnO in a quantum-confinement size regime (sub-2-nm) remains fiercely debated. Applying in situ (scanning) transmission electron microscopy, we present the atomistic view of the phase transitions from the original wurtzite structure to an intermediate body-centered tetragonal and h-MgO structure under tensile strain in quantum-confined ZnO nanowires. Strikingly, such structural transitions are reversible after releasing the stress. Further theoretical calculations mirror the transition pathway and provide basic insight into the overall landscape regarding surface- and strain-dependent phase transition behavior. Our results provide the critical piece to solve the puzzle in phase stability of ZnO, which may prove essential for advancing a variety of nanotechnologies, e.g., quantum-dot light-emitting devices.

3.
Nanoscale ; 15(20): 9139-9147, 2023 May 25.
Artigo em Inglês | MEDLINE | ID: mdl-37144280

RESUMO

As an emerging candidate for anisotropic two-dimensional materials, the group IV-V family (e.g. GeP, GeP2) has appealing applications in photoelectronics. However, their intrinsic point defect properties, which largely determine the device performance and optimization, are still poorly explored. In our study, through density functional theory (DFT) calculations, antisite defects were affirmed to be dominant with the lowest formation energies in 2D GePx semiconductors because of the similar atomic size and electronegativity of elemental components, which is in contrast to previous calculations and experimental speculation. These antisite defects could introduce relatively shallow states within the bandgap in bulk cases. The transition energy levels and electronic structures of defects reveal that GeP and PGe antisites act as dominant acceptors and donors, respectively. Strong interlayer coupling between anions results in a significant upshift of the valence band maximum (VBM) and shallower acceptor behaviors of GePx. Together with the dominant GeP antisite defect, the large upshift of the VBM in GeP leads to a remarkable transition of conductivity from intrinsic in the monolayer to p-type in the bulk. Such a synergistic effect in GeP2 is rather weak due to the strong inherent intralayer coupling of anions. Our research provides deep insights into the strong anion coupling effects on the electronic structures and defect properties of GeP and GeP2, which sheds light on defect engineering and electronic applications of GePx based semiconductors.

4.
J Phys Chem Lett ; 14(13): 3152-3159, 2023 Apr 06.
Artigo em Inglês | MEDLINE | ID: mdl-36961327

RESUMO

Framework structured tungsten bronzes serve as promising candidates for electrode materials in sodium-ion batteries (SIBs). However, the tungsten bronze framework structure changes drastically as mediated by the sodium ion concentration at high temperatures. While the three-dimensional ion channels facilitate fast ion storage and transport capabilities, the structural instability induced by Na+ migration is a big concern regarding the battery performance and safety, which unfortunately remains elusive. Here, we show the real-time experimental evidence of the phase transitions in framework structured Na0.36WO3.14 (triclinic phase) by applying different external voltages. The Na+-rich (Na0.48WO3, tetragonal phase) or -deficient (NaxWO3, x < 0.36, hexagonal phase) phase nucleates under the positive or negative bias, respectively. Combined with the theoretical calculations, the atomistic phase transition mechanisms associated with the Na+ migration are directly uncovered. Our work sheds light on the phase instability in sodium tungsten bronzes and paves the way for designing advanced SIBs with high-stability.

5.
J Phys Chem Lett ; 14(49): 11152-11159, 2023 Dec 14.
Artigo em Inglês | MEDLINE | ID: mdl-38054437

RESUMO

Unveiling the effects of oxygen vacancies on the structural stability of layered α-MoO3 is critical for optimizing its physical and chemical properties. Herein, we present experimental evidence regarding the phase stability of α-MoO3 with ∼2% oxygen vacancy concentrations. Interestingly, we report a previously ignored oxygen-deficient orthorhombic MoO3-x phase in space group Cmcm. Further density functional theory calculations reveal a detailed phase transition mechanism from α-MoO3 to MoO3-x. More importantly, we demonstrate that two-dimensional (2D) large polarons must exist to stabilize the MoO3-x crystal structure. 2D large polarons are suspected to exist in numerous quasi-2D systems but have never been found in layered α-MoO3 or other molybdenum oxides. Our work contributes to a basic understanding of the polaronic behavior in MoO3-x and may broaden the application realm of molybdenum oxides.

6.
Front Plant Sci ; 13: 1005261, 2022.
Artigo em Inglês | MEDLINE | ID: mdl-36330244

RESUMO

Solar greenhouses are important in the vegetable production and widely used for the counter-season production in the world. However, the CO2 consumed by crops for photosynthesis after sunrise is not supplemented and becomes chronically deficient due to the airtight structure of solar greenhouses. Vegetable crops cannot effectively utilize light resources under low-CO2 environment, and this incapability results in reduced photosynthetic efficiency and crop yield. We used cucumber as a model plant and generated several sets of transgenic cucumber plants overexpressing individual genes, including ß-carbonic anhydrase 1 (CsßCA1), ß-carbonic anhydrase 4 (CsßCA4), and sedoheptulose-1,7-bisphosphatase (CsSBP); fructose-1,6-bisphosphate aldolase (CsFBA), and CsßCA1 co-expressing plants; CsßCA4, CsSBP, and CsFBA co-expressing plants (14SF). The results showed that the overexpression of CsßCA1, CsßCA4, and 14SF exhibited higher photosynthetic and biomass yield in transgenic cucumber plants under low-CO2 environment. Further enhancements in photosynthesis and biomass yield were observed in 14SF transgenic plants under low-CO2 environment. The net photosynthesis biomass yield and photosynthetic rate increased by 49% and 79% compared with those of the WT. However, the transgenic cucumbers of overexpressing CsFBA and CsSBP showed insignificant differences in photosynthesis and biomass yield compared with the WT under low-CO2.environment. Photosynthesis, fluorescence parameters, and enzymatic measurements indicated that CsßCA1, CsßCA4, CsSBP, and CsFBA had cumulative effects in photosynthetic carbon assimilation under low-CO2 environment. Co-expression of this four genes (CsßCA1, CsßCA4, CsSBP, and CsFBA) can increase the carboxylation activity of RuBisCO and promote the regeneration of RuBP. As a result, the 14SF transgenic plants showed a higher net photosynthetic rate and biomass yield even under low-CO2environment.These findings demonstrate the possibility of cultivating crops with high photosynthetic efficiency by manipulating genes involved in the photosynthetic carbon assimilation metabolic pathway.

7.
Sci Rep ; 6: 33728, 2016 09 20.
Artigo em Inglês | MEDLINE | ID: mdl-27645097

RESUMO

SlARF2a is expressed in most plant organs, including roots, leaves, flowers and fruits. A detailed expression study revealed that SlARF2a is mainly expressed in the leaf nodes and cross-sections of the nodes indicated that SlARF2a expression is restricted to vascular organs. Decapitation or the application of 6-benzylaminopurine (BAP) can initially promote axillary shoots, during which SlARF2a expression is significantly reduced. Down-regulation of SlARF2a expression results in an increased frequency of dicotyledons and significantly increased lateral organ development. Stem anatomy studies have revealed significantly altered cambia and phloem in tomato plants expressing down-regulated levels of ARF2a, which is associated with obvious alterations in auxin distribution. Further analysis has revealed that altered auxin transport may occur via altered pin expression. To identify the interactions of AUX/IAA and TPL with ARF2a, four axillary shoot development repressors that are down-regulated during axillary shoot development, IAA3, IAA9, SlTPL1 and SlTPL6, were tested for their direct interactions with ARF2a. Although none of these repressors are directly involved in ARF2a activity, similar expression patterns of IAA3, IAA9 and ARF2a implied they might work tightly in axillary shoot formation and other developmental processes.


Assuntos
Compostos de Benzil/farmacologia , Câmbio/metabolismo , Regulação da Expressão Gênica de Plantas/efeitos dos fármacos , Floema/metabolismo , Proteínas de Plantas/biossíntese , Purinas/farmacologia , Solanum lycopersicum/metabolismo , Câmbio/genética , Ácidos Indolacéticos/metabolismo , Solanum lycopersicum/genética , Floema/genética , Proteínas de Plantas/genética
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