van der Waals Self-Epitaxial Growth of Inch-Sized Superconducting Niobium Diselenide Films.

Ultrathin superconducting films are the basis of superconductor devices. van der Waals (vdW) NbSe2 with noncentrosymmetry exhibits exotic superconductivity and shows promise in superconductor electronic devices. However, the growth of inch-scale NbSe2 films with layer regulation remains a challenge because vdW structural material growth is strongly dependent on the epitaxial guidance of the substrate. Herein, a vdW self-epitaxy strategy is developed to eliminate the substrate driving force in film growth and realize inch-sized NbSe2 film growth with thicknesses from 2.1 to 12.1 nm on arbitrary substrates. The superconducting transition temperature of 5.1 K and superconducting transition width of 0.30 K prove the top homogeneity and quality of superconductivity among all of the synthetic NbSe2 films. Coupled with a large area and substrate compatibility, this work paves the way for developing NbSe2 superconductor electronics.

Polarizer-free measurement of the full Stokes vector using a fiber-coupled superconducting nanowire single photon detector with a polarization extinction ratio of ∼2.

The characterization and manipulation of polarization state at single photon level are of great importance in research fields such as quantum information processing and quantum key distribution, where photons are normally delivered using single mode optical fibers. To date, the demonstrated polarimetry measurement techniques based on a superconducting nanowire single photon detector (SNSPD) require the SNSPD to be either highly sensitive or highly insensitive to the photon's polarization state, therefore placing an unavoidable challenge on the SNSPD's design and fabrication processes. In this article, we present the development of an alternative polarimetry measurement technique, of which the stringent requirement on the SNSPD's polarization sensitivity is removed. We validate the proposed technique by a rigorous theoretical analysis and comparisons of the experimental results obtained using a fiber-coupled SNSPD with a polarization extinction ratio of ∼2 to that obtained using other well-established known methods. Based on the full Stokes data measured by the proposed technique, we also demonstrate that at the single photon level (∼ -100 dBm), the polarization state of the photon delivered to the superconducting nanowire facet plane can be controlled at will using a further developed algorithm. Note that other than the fiber-coupled SNSPD, the only component involved is a quarter-wave plate (no external polarizer is necessary), which when aligned well has a paid insertion loss less than 0.5 dB.

Fast and accurate measurement of the polarization-dependent detection efficiency of superconducting nanowire single photon detectors.

Superconducting nanowire single photon detectors (SNSPDs) have been extensively investigated due to their superior characteristics, including high system detection efficiency, low dark count rate and short recovery time. The polarization sensitivity introduced by the meandering-type superconductor nanowires is an intrinsic property of SNSPD, which is normally measured by sweeping hundreds of points on the Poincaré sphere to overcome the unknown birefringent problem of the SNSPD's delivery fiber. In this paper, we propose an alternative method to characterize the optical absorptance of SNSPDs, without sweeping hundreds of points on the Poincaré sphere. It is shown theoretically that measurements on the system detection efficiencies (SDEs) subject to cases of four specific photon polarization states are sufficient to reveal the two eigen-absorptances of the SNSPD. We validate the proposed method by comparing the measured detection spectra with the spectra attained from sweeping points on the Poincaré sphere and the simulated absorption spectra.

Deep-learning-based single-photon-counting compressive imaging via jointly trained subpixel convolution sampling.

The combination of single-pixel-imaging and single-photon-counting technology can achieve ultrahigh-sensitivity photon-counting imaging. However, its applications in high-resolution and real-time scenarios are limited by the long sampling and reconstruction time. Deep-learning-based compressive sensing provides an effective solution due to its ability to achieve fast and high-quality reconstruction. This paper proposes a sampling and reconstruction integrated neural network for single-photon-counting compressive imaging. To effectively remove the blocking artefact, a subpixel convolutional layer is jointly trained with a deep reconstruction network to imitate compressed sampling. By modifying the forward and backward propagation of the network, the first layer is trained into a binary matrix, which can be applied to the imaging system. An improved deep-reconstruction network based on the traditional Inception network is proposed, and the experimental results show that its reconstruction quality is better than existing deep-learning-based compressive sensing reconstruction algorithms.

All-Water Etching-Free Electron Beam Lithography for On-Chip Nanomaterials.

Electron beam lithography uses an accelerated electron beam to fabricate patterning on an electron-beam-sensitive resist but requires complex dry etching or lift-off processes to transfer the pattern to the substrate or film on the substrate. In this study, etching-free electron beam lithography is developed to directly write a pattern of various materials in all-water processes, achieving the desired semiconductor nanopatterns on a silicon wafer. Introduced sugars are copolymerized with metal ions-coordinated polyethylenimine under the action of electron beams. The all-water process and thermal treatment result in nanomaterials with satisfactory electronic properties, indicating that diverse on-chip semiconductors (e.g., metal oxides, sulfides, and nitrides) can be directly printed on-chip by an aqueous solution system. As a demonstration, zinc oxide patterns can be achieved with a line width of 18 nm and a mobility of 3.94 cm2 V-1 s-1. This etching-free electron beam lithography strategy provides an efficient alternative for micro/nanofabrication and chip manufacturing.

Topotactic fabrication of transition metal dichalcogenide superconducting nanocircuits.

Superconducting nanocircuits, which are usually fabricated from superconductor films, are the core of superconducting electronic devices. While emerging transition-metal dichalcogenide superconductors (TMDSCs) with exotic properties show promise for exploiting new superconducting mechanisms and applications, their environmental instability leads to a substantial challenge for the nondestructive preparation of TMDSC nanocircuits. Here, we report a universal strategy to fabricate TMDSC nanopatterns via a topotactic conversion method using prepatterned metals as precursors. Typically, robust NbSe2 meandering nanowires can be controllably manufactured on a wafer scale, by which a superconducting nanowire circuit is principally demonstrated toward potential single photon detection. Moreover, versatile superconducting nanocircuits, e.g., periodical circle/triangle hole arrays and spiral nanowires, can be prepared with selected TMD materials (NbS2, TiSe2, or MoTe2). This work provides a generic approach for fabricating nondestructive TMDSC nanocircuits with precise control, which paves the way for the application of TMDSCs in future electronics.