RESUMO
We report on the crystal growth of the orthorhombic low-temperature ß-phase of (Y0.5,Gd0.5)F3 (YGF) single crystals. The crystals were activated with trivalent praseodymium (Pr3+) and characterized with respect to their ground state absorption and stimulated emission properties. Under InGaN-laser-diode pumping, laser oscillation was obtained at more than ten wavelengths in the green, orange, red, and dark red spectral regions. In these initial experiments, output powers exceeding 100 mW and slope efficiencies between 10% and 30% were obtained. To the best of our knowledge, these results represent the first application of YGF crystals as laser host material for any active ion.
RESUMO
It is demonstrated that high-resolution energy-dispersive X-ray fluorescence mapping devices based on a micro-focused beam are not restricted to high-speed analyses of element distributions or to the detection of different grains, twins and subgrains in crystalline materials but can also be used for the detection of dislocations in high-quality single crystals. Si single crystals with low dislocation densities were selected as model materials to visualize the position of dis-locations by the spatially resolved measurement of Bragg-peak intensity fluctuations. These originate from the most distorted planes caused by the stress fields of dislocations. The results obtained by this approach are compared with laboratory-based Lang X-ray topographs. The presented methodology yields comparable results and it is of particular interest in the field of crystal growth, where fast chemical and microstructural characterization feedback loops are indispensable for short and efficient development times. The beam divergence was reduced via an aperture management system to facilitate the visualization of dislocations for virtually as-grown, non-polished and non-planar samples with a very pronounced surface profile.