Resolving the Chemically Discrete Structure of Synthetic Borophene Polymorphs.

Atomically thin two-dimensional (2D) materials exhibit superlative properties dictated by their intralayer atomic structure, which is typically derived from a limited number of thermodynamically stable bulk layered crystals (e.g., graphene from graphite). The growth of entirely synthetic 2D crystals, those with no corresponding bulk allotrope, would circumvent this dependence upon bulk thermodynamics and substantially expand the phase space available for structure-property engineering of 2D materials. However, it remains unclear if synthetic 2D materials can exist as structurally and chemically distinct layers anchored by van der Waals (vdW) forces, as opposed to strongly bound adlayers. Here, we show that atomically thin sheets of boron (i.e., borophene) grown on the Ag(111) surface exhibit a vdW-like structure without a corresponding bulk allotrope. Using X-ray standing wave-excited X-ray photoelectron spectroscopy, the positions of boron in multiple chemical states are resolved with sub-angström spatial resolution, revealing that the borophene forms a single planar layer that is 2.4 Å above the unreconstructed Ag surface. Moreover, our results reveal that multiple borophene phases exhibit these characteristics, denoting a unique form of polymorphism consistent with recent predictions. This observation of synthetic borophene as chemically discrete from the growth substrate suggests that it is possible to engineer a much wider variety of 2D materials than those accessible through bulk layered crystal structures.

Large Spatially Resolved Rectification in a Donor-Acceptor Molecular Heterojunction.

We demonstrate that rectification ratios (RR) of ≳250 (≳1000) at biases of 0.5 V (1.2 V) are achievable at the two-molecule limit for donor-acceptor bilayers of pentacene on C60 on Cu using scanning tunneling spectroscopy and microscopy. Using first-principles calculations, we show that the system behaves as a molecular Schottky diode with a tunneling transport mechanism from semiconducting pentacene to Cu-hybridized metallic C60. Low-bias RRs vary by two orders-of-magnitude at the edge of these molecular heterojunctions due to increased Stark shifts and confinement effects.

Substrate-Induced Nanoscale Undulations of Borophene on Silver.

Two-dimensional (2D) materials tend to be mechanically flexible yet planar, especially when adhered on metal substrates. Here, we show by first-principles calculations that periodic nanoscale one-dimensional undulations can be preferred in borophenes on concertedly reconstructed Ag(111). This "wavy" configuration is more stable than its planar form on flat Ag(111) due to anisotropic high bending flexibility of borophene that is also well described by a continuum model. Atomic-scale ultrahigh vacuum scanning tunneling microscopy characterization of borophene grown on Ag(111) reveals such undulations, which agree with theory in terms of topography, wavelength, Moiré pattern, and prevalence of vacancy defects. Although the lattice is coherent within a borophene island, the undulations nucleated from different sides of the island form a distinctive domain boundary when they are laterally misaligned. This structural model suggests that the transfer of undulated borophene onto an elastomeric substrate would allow for high levels of stretchability and compressibility with potential applications to emerging stretchable and foldable devices.

Electronic and Mechanical Properties of Graphene-Germanium Interfaces Grown by Chemical Vapor Deposition.

Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date, however, this material system remains relatively unexplored structurally and electronically, particularly at the atomic scale. To further understand the nature of the interface between graphene and Ge, we utilize ultrahigh vacuum scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) along with Raman and X-ray photoelectron spectroscopy to probe interfacial atomic structure and chemistry. STS reveals significant differences in electronic interactions between graphene and Ge(110)/Ge(111), which is consistent with a model of stronger interaction on Ge(110) leading to epitaxial growth. Raman spectra indicate that the graphene is considerably strained after growth, with more point-to-point variation on Ge(111). Furthermore, this native strain influences the atomic structure of the interface by inducing metastable and previously unobserved Ge surface reconstructions following annealing. These nonequilibrium reconstructions cover >90% of the surface and, in turn, modify both the electronic and mechanical properties of the graphene overlayer. Finally, graphene on Ge(001) represents the extreme strain case, where graphene drives the reorganization of the Ge surface into [107] facets. From this work, it is clear that the interaction between graphene and the underlying Ge is not only dependent on the substrate crystallographic orientation, but is also tunable and strongly related to the atomic reconfiguration of the graphene-Ge interface.

Synthesis of palladium nanoparticles on TiO2(110) using a beta-diketonate precursor.

The adsorption of palladium hexafluoracetylacetone (Pd(hfac)2) and nucleation of Pd nanoparticles on TiO2(110) surface were observed using scanning tunneling microscopy (STM). Surface species of Pd(hfac)* and Ti(hfac)* uniformly adsorbed on TiO2(110) upon exposure of Pd(hfac)2. No preferential nucleation was observed for the surface species. Atomic resolution STM images revealed that both Pd(hfac)* and Ti(hfac)* appeared on the metastable Ti(5c) sites. After annealing at 700 K, sub-nm Pd nanoparticles were observed across the TiO2(110) without preferential nucleation. The adsorption preferences of Pd(hfac), hfac, and atomic Pd on TiO2(110) surface were studied using density functional theory (DFT), and possible decomposition pathways of Pd(hfac)2 leading to the formation of Pd nucleation sites were presented.

Structural and electronic decoupling of C60 from epitaxial graphene on SiC.

We have investigated the initial stages of growth and the electronic structure of C(60) molecules on graphene grown epitaxially on SiC(0001) at the single-molecule level using cryogenic ultrahigh vacuum scanning tunneling microscopy and spectroscopy. We observe that the first layer of C(60) molecules self-assembles into a well-ordered, close-packed arrangement on graphene upon molecular deposition at room temperature while exhibiting a subtle C(60) superlattice. We measure a highest occupied molecular orbital-lowest unoccupied molecular orbital gap of ∼3.5 eV for the C(60) molecules on graphene in submonolayer regime, indicating a significantly smaller amount of charge transfer from the graphene to C(60) and substrate-induced screening as compared to C(60) adsorbed on metallic substrates. Our results have important implications for the use of graphene for future device applications that require electronic decoupling between functional molecular adsorbates and substrates.

Graphene induced surface reconstruction of Cu.

An atomic-scale study utilizing scanning tunneling microscopy (STM) in ultrahigh vacuum (UHV) is performed on large single crystalline graphene grains synthesized on Cu foil by a chemical vapor deposition (CVD) method. After thermal annealing, we observe the presence of periodic surface depressions (stripe patterns) that exhibit long-range order formed in the area of Cu covered by graphene. We suggest that the observed stripe pattern is a Cu surface reconstruction formed by partial dislocations (which appeared to be stair-rod-like) resulting from the strain induced by the graphene overlayer. In addition, these graphene grains are shown to be more decoupled from the Cu substrate compared to previously studied grains that exhibited Moiré patterns.

Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition.

The strong interest in graphene has motivated the scalable production of high-quality graphene and graphene devices. As the large-scale graphene films synthesized so far are typically polycrystalline, it is important to characterize and control grain boundaries, generally believed to degrade graphene quality. Here we study single-crystal graphene grains synthesized by ambient chemical vapour deposition on polycrystalline Cu, and show how individual boundaries between coalescing grains affect graphene's electronic properties. The graphene grains show no definite epitaxial relationship with the Cu substrate, and can cross Cu grain boundaries. The edges of these grains are found to be predominantly parallel to zigzag directions. We show that grain boundaries give a significant Raman 'D' peak, impede electrical transport, and induce prominent weak localization indicative of intervalley scattering in graphene. Finally, we demonstrate an approach using pre-patterned growth seeds to control graphene nucleation, opening a route towards scalable fabrication of single-crystal graphene devices without grain boundaries.

Graphene nanoribbons initiated from molecularly derived seeds.

Semiconducting graphene nanoribbons are promising materials for nanoelectronics but are held back by synthesis challenges. Here we report that molecular-scale carbon seeds can be exploited to initiate the chemical vapor deposition (CVD) synthesis of graphene to generate one-dimensional graphene nanoribbons narrower than 5 nm when coupled with growth phenomena that selectively extend seeds along a single direction. This concept is demonstrated by subliming graphene-like polycyclic aromatic hydrocarbon molecules onto a Ge(001) catalyst surface and then anisotropically evolving size-controlled nanoribbons from the seeds along [Formula: see text] of Ge(001) via CH4 CVD. Armchair nanoribbons with mean normalized standard deviation as small as 11% (3 times smaller than nanoribbons nucleated without seeds), aspect ratio as large as 30, and width as narrow as 2.6 nm (tunable via CH4 exposure time) are realized. Two populations of nanoribbons are compared in field-effect transistors (FETs), with off-current differing by 150 times because of the nanoribbons' different widths.

Artificial Graphene Nanoribbons: A Test Bed for Topology and Low-Dimensional Dirac Physics.

We synthesize artificial graphene nanoribbons by positioning carbon monoxide molecules on a copper surface to confine its surface state electrons into artificial atoms positioned to emulate the low-energy electronic structure of graphene derivatives. We demonstrate that the dimensionality of artificial graphene can be reduced to one dimension with proper "edge" passivation, with the emergence of an effectively gapped one-dimensional nanoribbon structure. These one-dimensional structures show evidence of topological effects analogous to graphene nanoribbons. Guided by first-principles calculations, we spatially explore robust, zero-dimensional topological states by altering the topological invariants of quasi-one-dimensional artificial graphene nanostructures. The robustness and flexibility of our platform allow us to toggle the topological invariants between trivial and nontrivial on the same nanostructure. Ultimately, we spatially manipulate the states to understand fundamental coupling between adjacent topological states that are finely engineered and simulate complex Hamiltonians.

Epitaxial graphene on Cu(111).

The growth of graphene on single crystal Cu(111) has been achieved by thermal decomposition of ethylene in an ultrahigh vacuum chamber for the first time. The structural and electronic properties of graphene on Cu(111) have been investigated by scanning tunneling microscopy and spectroscopy. The nucleation of monolayer islands and two predominant domain orientations have been observed, which lead to the formation of numerous domain boundaries with increasing coverage. These results reveal that reducing the density of domain boundaries is one challenge of growing high-quality graphene on copper.

Patterning graphene at the nanometer scale via hydrogen desorption.

We have demonstrated the reversible and local modification of the electronic properties of graphene by hydrogen passivation and subsequent electron-stimulated hydrogen desorption with an scanning tunneling microscope tip. In addition to changing the morphology, we show that the hydrogen passivation is stable at room temperature and modifies the electronic properties of graphene, opening a gap in the local density of states. This insulating state is reversed by local desorption of the hydrogen, and the unaltered electronic properties of graphene are recovered. Using this mechanism, we have "written" graphene patterns on nanometer length scales. For patterned regions that are roughly 20 nm or greater, the inherent electronic properties of graphene are completely recovered. Below 20 nm we observe dramatic variations in the electronic properties of the graphene as a function of pattern size. This reversible and local mechanism for modifying the electronic properties of graphene has far-reaching implications for nanoscale circuitry fabricated from this revolutionary material.

Exposure of epitaxial graphene on SiC(0001) to atomic hydrogen.

Graphene films on SiC exhibit coherent transport properties that suggest the potential for novel carbon-based nanoelectronics applications. Recent studies suggest that the role of the interface between single layer graphene and silicon-terminated SiC can strongly influence the electronic properties of the graphene overlayer. In this study, we have exposed the graphitized SiC to atomic hydrogen in an effort to passivate dangling bonds at the interface, while investigating the results utilizing room temperature scanning tunneling microscopy.

Near-equilibrium growth from borophene edges on silver.

Two-dimensional boron, borophene, was realized in recent experiments but still lacks an adequate growth theory for guiding its controlled synthesis. Combining ab initio calculations and experimental characterization, we study edges and growth kinetics of borophene on Ag(111). In equilibrium, the borophene edges are distinctly reconstructed with exceptionally low energies, in contrast to those of other two-dimensional materials. Away from equilibrium, sequential docking of boron feeding species to the reconstructed edges tends to extend the given lattice out of numerous polymorphic structures. Furthermore, each edge can grow via multiple energy pathways of atomic row assembly due to variable boron-boron coordination. These pathways reveal different degrees of anisotropic growth kinetics, shaping borophene into diverse elongated hexagonal islands in agreement with experimental observations in terms of morphology as well as edge orientation and periodicity. These results further suggest that ultrathin borophene ribbons can be grown at low temperature and low boron chemical potential.

Borophene Synthesis on Au(111).

Borophene (the first two-dimensional (2D) allotrope of boron) is emerging as a groundbreaking system for boron-based chemistry and, more broadly, the field of low-dimensional materials. Exploration of the phase space for growth is critical because borophene is a synthetic 2D material that does not have a bulk layered counterpart and thus cannot be isolated via exfoliation methods. Herein, we report synthesis of borophene on Au(111) substrates. Unlike previously studied growth on Ag substrates, boron diffuses into Au at elevated temperatures and segregates to the surface to form borophene islands as the substrate cools. These observations are supported by ab initio modeling of interstitial boron diffusion into the Au lattice. Borophene synthesis also modifies the surface reconstruction of the Au(111) substrate, resulting in a trigonal network that templates growth at low coverage. This initial growth is composed of discrete borophene nanoclusters, whose shape and size are consistent with theoretical predictions. As the concentration of boron increases, nanotemplating breaks down and larger borophene islands are observed. Spectroscopic measurements reveal that borophene grown on Au(111) possesses a metallic electronic structure, suggesting potential applications in 2D plasmonics, superconductivity, interconnects, electrodes, and transparent conductors.

Growth of Pd Nanoclusters on Single-Layer Graphene on Cu(111).

We report scanning tunneling microscopy results on the nucleation and growth of Pd nanoclusters on a single layer of graphene on the Cu(111) surface. The shape, organization, and structural evolution of the Pd nanoclusters were investigated using two different growth methods, continuous and stepwise. The size and shape of the formed nanoclusters were found to greatly depend on the growth technique used. The size and density of spherical Pd nanoclusters increased with increasing coverage during stepwise deposition as a result of coarsening of existing clusters and continued nucleation of new clusters. In contrast, continuous deposition gave rise to well-defined triangular Pd clusters as a result of anisotropic growth on the graphene surface. Exposure to ethylene caused a decrease in the size of the Pd clusters. This is attributed to the exothermic formation of ethylidyne on the cluster surfaces and an accompanying weakening of the Pd-Pd bonding.

Borophene as a prototype for synthetic 2D materials development.

The synthesis of 2D materials with no analogous bulk layered allotropes promises a substantial breadth of physical and chemical properties through the diverse structural options afforded by substrate-dependent epitaxy. However, despite the joint theoretical and experimental efforts to guide materials discovery, successful demonstrations of synthetic 2D materials have been rare. The recent synthesis of 2D boron polymorphs (that is, borophene) provides a notable example of such success. In this Perspective, we discuss recent progress and future opportunities for borophene research. Borophene combines unique mechanical properties with anisotropic metallicity, which complements the canon of conventional 2D materials. The multi-centre characteristics of boron-boron bonding lead to the formation of configurationally varied, vacancy-mediated structural motifs, providing unprecedented diversity in a mono-elemental 2D system with potential for electronic applications, chemical functionalization, materials synthesis and complex heterostructures. With its foundations in computationally guided synthesis, borophene can serve as a prototype for ongoing efforts to discover and exploit synthetic 2D materials.

Rotational superstructure in van der Waals heterostructure of self-assembled C60 monolayer on the WSe2 surface.

Hybrid van der Waals (vdW) heterostructures composed of two-dimensional (2D) layered materials and self-assembled organic molecules are promising systems for electronic and optoelectronic applications with enhanced properties and performance. Control of molecular assembly is therefore paramount to fundamentally understand the nucleation, ordering, alignment, and electronic interaction of organic molecules with 2D materials. Here, we report the formation and detailed study of highly ordered, crystalline monolayers of C60 molecules self-assembled on the surface of WSe2 in well-ordered arrays with large grain sizes (∼5 µm). Using high-resolution scanning tunneling microscopy (STM), we observe a periodic 2 × 2 superstructure in the C60 monolayer and identify four distinct molecular appearances. Using vdW-corrected ab initio density functional theory (DFT) simulations, we determine that the interplay between vdW and Coulomb interactions as well as adsorbate-adsorbate and adsorbate-substrate interactions results in specific rotational arrangements of the molecules forming the superstructure. The orbital ordering through the relative positions of bonds in adjacent molecules creates a charge redistribution that links the molecule units in a long-range network. This rotational superstructure extends throughout the self-assembled monolayer and opens a pathway towards engineering aligned hybrid organic/inorganic vdW heterostructures with 2D layered materials in a precise and controlled way.

Self-assembly of electronically abrupt borophene/organic lateral heterostructures.

Two-dimensional boron sheets (that is, borophene) have recently been realized experimentally and found to have promising electronic properties. Because electronic devices and systems require the integration of multiple materials with well-defined interfaces, it is of high interest to identify chemical methods for forming atomically abrupt heterostructures between borophene and electronically distinct materials. Toward this end, we demonstrate the self-assembly of lateral heterostructures between borophene and perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA). These lateral heterostructures spontaneously form upon deposition of PTCDA onto submonolayer borophene on Ag(111) substrates as a result of the higher adsorption enthalpy of PTCDA on Ag(111) and lateral hydrogen bonding among PTCDA molecules, as demonstrated by molecular dynamics simulations. In situ x-ray photoelectron spectroscopy confirms the weak chemical interaction between borophene and PTCDA, while molecular-resolution ultrahigh-vacuum scanning tunneling microscopy and spectroscopy reveal an electronically abrupt interface at the borophene/PTCDA lateral heterostructure interface. As the first demonstration of a borophene-based heterostructure, this work will inform emerging efforts to integrate borophene into nanoelectronic applications.

Built-in Electric Field Induced Mechanical Property Change at the Lanthanum Nickelate/Nb-doped Strontium Titanate Interfaces.

The interactions between electric field and the mechanical properties of materials are important for the applications of microelectromechanical and nanoelectromechanical systems, but relatively unexplored for nanoscale materials. Here, we observe an apparent correlation between the change of the fractured topography of Nb-doped SrTiO3 (Nb:STO) within the presence of a built-in electric field resulting from the Schottky contact at the interface of a metallic LaNiO3 thin film utilizing cross-sectional scanning tunneling microscopy and spectroscopy. The change of the inter-atomic bond length mechanism is argued to be the most plausible origin. This picture is supported by the strong-electric-field-dependent permittivity in STO and the existence of the dielectric dead layer at the interfaces of STO with metallic films. These results provided direct evidence and a possible mechanism for the interplay between the electric field and the mechanical properties on the nanoscale for perovskite materials.