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Recent developments of photonic integrated circuits for the mid-infrared band has opened up a new field of attractive applications for group IV photonics. Grating couplers, formed as diffractive structures on the chip surface, are key components for input and output coupling in integrated photonic platforms. While near-infrared optical fibers exhibit large mode field diameters compared to the wavelength, in the long-wave regime commercially available single-mode optical fibers have mode field diameters of the order of the operating wavelength. Consequently, an efficient fiber-chip surface coupler designed for the long-wave infrared range must radiate the power propagating in the waveguide with a higher radiation strength than a conventional grating coupler in the near-infrared range. In this article, we leverage the short electrical length required for long-wave infrared couplers to design a broadband all-dielectric micro-antenna for a suspended germanium platform at 7.67 µm. The design methodology is inspired by fundamental grating coupler equations, which remain valid even when the micro-antenna has only two or three diffractive elements. A simulated coupling efficiency of ~ 40% is achieved with a 1-dB bandwidth broader than 430 nm, which is almost twice the typical fractional bandwidth of a conventional grating coupler. In addition, the proposed design is markedly tolerant to fiber tilt misalignments of ±10°. This all-dielectric micro-antenna design paves the way for efficient fiber-chip coupling in long-wavelength mid-infrared integrated platforms.
RESUMO
In this Letter, we report suspended silicon waveguides operating at a wavelength of 7.67 µm with a propagation loss of 3.1±0.3 dB/cm. To our knowledge, this is the first demonstration of low-loss silicon waveguides at such a long wavelength, with loss comparable to other platforms that use more exotic materials. The suspended Si waveguide core is supported by a sub-wavelength grating that provides lateral optical confinement while also allowing access to the buried oxide layer so that it can be wet etched using hydrofluoric acid. We also demonstrate low-loss waveguide bends and s-bends.
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We present several fundamental photonic building blocks based on suspended silicon waveguides supported by a lateral cladding comprising subwavelength grating metamaterial. We discuss the design, fabrication, and characterization of waveguide bends, multimode interference devices and Mach-Zehnder interferometers for the 3715 - 3800 nm wavelength range, demonstrated for the first time in this platform. The waveguide propagation loss of 0.82 dB/cm is reported, some of the lowest loss yet achieved in silicon waveguides for this wavelength range. These results establish a direct path to ultimately extending the operational wavelength range of silicon wire waveguides to the entire transparency window of silicon.
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Conventional dual-polarization coherent receivers require polarization beam splitters for either the signal or the local oscillator path. This severely hinders monolithic integration, since integrated polarization splitting devices often exhibit stringent fabrication tolerances. Here we propose a dual-polarization monolithically integrated coherent receiver architecture that completely avoids the use of polarization splitting elements. Polarization management is instead achieved by adequately engineering the birefringence of the interconnecting waveguides. The resultant receiver is highly tolerant to fabrication deviations and thus offers a completely new route for monolithic integration of dual-polarization receivers without any type of active tuning.
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We propose an ultra-broadband multimode interference (MMI) coupler with a wavelength range exceeding the O, E, S, C, L and U optical communication bands. For the first time, the dispersion property of the MMI section is engineered using a subwavelength grating structure to mitigate wavelength dependence of the device. We present a 2 × 2 MMI design with a bandwidth of 450nm, an almost fivefold enhancement compared to conventional designs, maintaining insertion loss, power imbalance and MMI phase deviation below 1dB, 0.6dB and 3°, respectively. The design is performed using an in-house tool based on the 2D Fourier Eigenmode Expansion Method (F-EEM) and verified with a 3D Finite Difference Time Domain (FDTD) simulator.
Assuntos
Refratometria/instrumentação , Ressonância de Plasmônio de Superfície/instrumentação , Telecomunicações/instrumentação , Desenho Assistido por Computador , Desenho de Equipamento , Análise de Falha de EquipamentoRESUMO
Polarization handling is a key requirement for the next generation of photonic integrated circuits (PICs). Integrated polarization beam splitters (PBS) are central elements for polarization management, but their use in PICs is hindered by poor fabrication tolerances. In this work we present a fully passive, highly fabrication tolerant polarization beam splitter, based on an asymmetrical Mach-Zehnder interferometer (MZI) with a Si/SiO(2) Periodic Layer Structure (PLS) on top of one of its arms. By engineering the birefringence of the PLS we are able to design the MZI arms so that sensitivities to the most critical fabrication errors are greatly reduced. Our PBS design tolerates waveguide width variations of 400nm maintaining a polarization extinction ratio better than 13dB in the complete C-Band.
Assuntos
Interferometria/instrumentação , Lentes , Refratometria/instrumentação , Desenho de Equipamento , Análise de Falha de EquipamentoRESUMO
Directional couplers are extensively used devices in integrated optics, but suffer from limited operational wavelength range. Here we use, for the first time, the dispersive properties of sub-wavelength gratings to achieve a fivefold enhancement in the operation bandwidth of a silicon-on-insulator directional coupler. This approach does not compromise the size or the phase response of the device. The sub-wavelength grating based directional coupler we propose covers a 100 nm bandwidth with an imbalance of ≤ 0.6 dB between its outputs, as supported by full 3D FDTD simulations.
RESUMO
We demonstrate supercontinuum generation spanning 1.6 octaves in silicon nitride waveguides. Using a 4.3 cm-long waveguide, with an effective nonlinearity of γ=1.2 W(-1) m(-1), we generate a spectrum extending from 665 nm to 2025 nm (at -30 dB) with 160 pJ pulses. Our results offer potential for a robust, integrated, and low-cost supercontinuum source for applications including frequency metrology, optical coherence tomography, confocal microscopy, and optical communications.
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Grating couplers are a promising approach to implement efficient fiber-chip coupling. However, their strong polarization dependence makes dual-polarization operation challenging. In this Letter we propose, for the first time, a polarization-independent grating coupler for thick rib silicon-on-insulator (SOI) waveguides. Coupling efficiency is optimized by designing the grating pitch and duty cycle, without varying the bottom oxide thickness, which significantly simplifies practical implementation. Directivity of the grating coupler is enhanced by a high reflectivity layer under the bottom oxide after the selective removal of the Si substrate. Dual-polarization coupling efficiency of -2.8 dB is shown.
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Integrated polarization rotators are known to exhibit stringent fabrication tolerances, which severely handicap their practical application. Here we present a general polarization rotator scheme that enables both the compensation of fabrication errors and wavelength tunability. The scheme is described analytically, and a condition for perfect polarization conversion is established. Simulations of a silicon-on-insulator polarization rotator show polarization extinction ratios in excess of 40 dB even in the presence of large fabrication errors that in a conventional rotator configuration degrade the extinction ratio to below 5 dB. Additionally, wavelength tuning over ±30 nm is shown.
RESUMO
We propose a multimode interference coupler (MMI) design for high-index-contrast technologies based on a shallowly etched multimode region, which is, for the first time to our knowledge, directly coupled to deeply etched input and output waveguides. This reduces the phase errors associated with the high-index contrast, while still allowing for a very compact layout. Using this structure, we fabricate a 2 × 4 MMI operating as a 90° hybrid, with a footprint of only 0.65 mm × 0.53 mm, including all the structures necessary to couple light to a fiber array. We experimentally demonstrate a common mode rejection ratio better than -20 dBe and phase errors better than ±5° in a ~50 nm bandwidth.
RESUMO
Grating couplers are widely used as an efficient and versatile fiber-chip coupling structure in nanometric silicon wire waveguides. The implementation of efficient grating couplers in micrometric silicon-on-insulator (SOI) rib waveguides is, however, challenging, since the coupler waveguide region is multimode. Here we experimentally demonstrate grating couplers in 1.5 µm-thick SOI rib waveguides with a coupling efficiency of -2.2 dB and a 3 dB bandwidth of 40 nm. An inverse taper is used to adiabatically transform the interconnection waveguide mode to the optimum grating coupler excitation field with negligible higher order Bloch mode excitation. Couplers are fabricated in the same etch step as the waveguides using i-line stepper lithography. The benefits of wafer-scale testing and device characterization without facet preparation are thus attained at no additional cost.
RESUMO
Grating couplers are an efficient means for fiber to chip coupling, as they require no facet preparation and enable wafer scale testing. While grating couplers are commonly used in silicon wire waveguides, their application to micrometric silicon-on-insulator rib waveguides is complicated due to the presence of high-order Bloch modes. We study the Bloch modes behavior and their excitation determined by access waveguide design. The latter is implemented to enable single Bloch mode excitation. The use of a design process based on modal analysis is proposed. A grating coupler is proposed in silicon-on-insulator with 1.5 microm thick silicon layer that achieves a coupling efficiency of 65.6% at 1.55 microm. The structure, including interconnection waveguides, access waveguide and grating can be fabricated using a single lithography step.
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We demonstrate a fully etched, continuously apodized fiber-to-chip surface grating coupler for the first time (to our knowledge). The device is fabricated in a single-etch step and operates with TM-polarized light, achieving a coupling efficiency of 3.7 dB and a 3 dB bandwidth of 60 nm. A subwavelength microstructure is employed to generate an effective medium engineered to vary the strength of the grating and thereby maximize coupling efficiency, while mitigating backreflections at the same time. Minimum feature size is 100 nm for compatibility with deep-UV 193 nm lithography.
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Spurious reflections can preclude the accurate experimental characterization of integrated optical devices. This is particularly important for facet reflections in high refractive index platforms such as Indium Phosphide (InP) or Silicon-on-Insulator (SOI) when no anti-reflective (AR) coating is used. In this paper we present a novel method to recover the original device characteristics from the measured power transmission in the presence of such reflections. Our approach uses minimum phase techniques to reconstruct time domain information which is filtered to remove the reflection artifacts. A criterion to assess if a certain device exhibits the minimum phase characteristics required to apply the technique is given. Simulated and experimental results for multi-mode interference couplers (MMICs) in SOI without AR coating validate the technique.