SESAM mode-locked Yb:GdScO3 laser.

We report on the investigation of continuous-wave (CW) and SEmiconductor Saturable Absorber Mirror (SESAM) mode-locked operation of a Yb:GdScO3 laser. Using a single-transverse-mode, fiber-coupled InGaAs laser diode at 976 nm as a pump source, the Yb:GdScO3 laser delivers 343 mW output power at 1062 nm in the CW regime, which corresponds to a slope efficiency of 52%. Continuous tuning is possible across a wavelength range of 84 nm (1027-1111 nm). Using a commercial SESAM to initiate mode-locking and stabilize soliton-type pulse shaping, the Yb:GdScO3 laser produces pulses as short as 42 fs at 1065.9 nm, with an average output power of 40 mW at 66.89 MHz. To the best of our knowledge, this is the first demonstration of passively mode-locking with Yb:GdScO3 crystal.

Spectroscopy and efficient dual-wavelength laser performances of a Nd:GYSAG crystal.

We reported on the spectral properties and dual-wavelength laser performances of a novel, to the best of our knowledge, Nd:Gd1.8Y1.2ScAl4O12 (Nd:GYSAG) crystal for the first time. The absorption spectra, emission spectra, and fluorescence lifetime were systematically investigated. Further, a continuous-wavelength (CW) laser output power up to 5.02 W was obtained under an absorbed pump power of 9.45 W with slope and optical-to-optical efficiencies of 59.4% and 53.1%, respectively, at 1061.2 and 1063.2 nm. A stable passively Q-switched (PQS) laser employing Cr:YAG as a saturable absorber (SA) was realized. The maximum average output power of 0.756 W with a slope of near 34.4% was obtained with the pulse width, pulse energy, and peak power of 14.0 ns, 128.1 µJ, and 9.15 kW, respectively. The results indicate that the Nd:GYSAG crystal is an excellent laser medium for generating a high-efficiency dual-wavelength laser and has potential in terahertz (THz) laser generation.

Design of a broadband Si3N4 waveguide amplifier based on a gain medium of ion-sliced titanium-doped sapphire.

In recent years, significant progress has been made in the on-chip integration of Ti:sapphire amplifiers and lasers, showing great potential in device miniaturization, cost reduction, and mass production. However, the further integration of such devices on standard CMOS platforms has been challenging due to its limits on the wafer bonding method between gain materials and substrates. Here, we present a novel, to the best of our knowledge, Si3N4 on-chip broadband optical waveguide amplifier scheme with an ultra-wide bandwidth of 650-900 nm and a peak gain of 28 dB based on an ion-sliced Ti:sapphire platform. The difficulty of heterogeneous integration is significantly reduced by growing Si3N4 thin films on Ti:sapphire. Moreover, by using homogeneous bonding combined with ion slicing technology, the target thickness of Ti:sapphire is expected to be easily controlled to less than 1 µm, greatly reducing the device volume and improving its practicality. Through subsequent experimental optimization, this work is expected to provide a new approach for the optimized design and experimental realization of on-chip Ti:sapphire waveguide amplifiers and lasers.

Structures and Properties of High-Concentration Doped Th:CaF2 Single Crystals for Solid-State Nuclear Clock Materials.

Thorium-doped vacuum ultraviolet (VUV) transparent crystals is a promising candidate for establishing a solid-state nuclear clock. Here, we report the research results on high-concentration doping of 232Th:CaF2 single crystals. The structures, defects, and VUV transmittance performances of highly doped Th:CaF2 crystals are investigated by theoretical and experimental methods. The defect configurations formed by Th and the charge compensation mechanism (Ca vacancy or interstitial F atoms) located at its first nearest neighbor position are mainly considered and studied. The preferred defect configuration is identified according to the doping concentration dependence of structural changes caused by the defects and the formation energies of the defects at different Ca or F chemical potentials. The cultivated Th:CaF2 crystals maintain considerable high VUV transmittance levels while accommodating high doping concentrations, showcasing an exceptional comprehensive performance. The transmittances of 1-mm-thick samples with doping concentrations of 1.91 × 1020 and 2.76 × 1020 cm-3 can reach ∼62% and 53% at 150 nm, respectively. The VUV transmittance exhibits a weak negative doping concentration dependence. The system factors that may cause distortion and additional deterioration of the VUV transmittance are discussed. Balancing and controlling the impacts of various factors will be of great significance for fully exploiting the advantages of Th:CaF2 and other Th-doped crystals for a solid-state nuclear optical clock.

Systemic Inflammation Disrupts Circadian Rhythms and Diurnal Neuroimmune Dynamics.

Circadian rhythms regulate physiological processes in approximately 24 h cycles, and their disruption is associated with various diseases. Inflammation may perturb circadian rhythms, though these interactions remain unclear. This study examined whether systemic inflammation induced by an intraperitoneal injection of lipopolysaccharide (LPS) could alter central and peripheral circadian rhythms and diurnal neuroimmune dynamics. Mice were randomly assigned to two groups: the saline control group and the LPS group. The diurnal expression of circadian clock genes and inflammatory cytokines were measured in the hypothalamus, hippocampus, and liver. Diurnal dynamic behaviors of microglia were also assessed. Our results revealed that the LPS perturbed circadian gene oscillations in the hypothalamus, hippocampus, and liver. Furthermore, systemic inflammation induced by the LPS could trigger neuroinflammation and perturb the diurnal dynamic behavior of microglia in the hippocampus. These findings shed light on the intricate link between inflammation and circadian disruption, underscoring their significance in relation to neurodegenerative diseases.

Emission cross section redetermination of Nd:LuAG crystals.

The emission cross section of Nd:LuAG was evaluated using two different methods: the Füchtbauer-Ladenburg equation and the threshold-slope measurements; similar results were obtained with both methods. All measurements and calculations were compared with those of Nd:YAG to reduce uncertainty. Detailed spectroscopic properties of Nd:LuAG were demonstrated. The results showed that the peak emission cross section of Nd:LuAG is approximately 20 × 10-20 cm2, approximately 2/3 the emission cross section of Nd:YAG, instead of the previously reported 9.67 × 10-20 cm2. Additionally, the corresponding saturation flux is 0.9 J/cm2. Therefore, the energy storage capacity of Nd:LuAG is not significantly improved, and it is not sufficient for large-scale amplifiers.

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with a 27†dB internal net gain.

A photonic integrated waveguide amplifier fabricated on erbium-ytterbium (Er-Yb) codoped thin-film lithium niobate (TFLN) has been investigated in this work. A small-signal internal net gain of 27 dB is achieved at a signal wavelength of 1532 nm in the fabricated Er-Yb TFLN waveguide amplifier pumped by a diode laser at ≈980 nm. Experimental characterizations reveal the suitability of waveguide fabrication by the photolithography-assisted chemo-mechanical etching (PLACE) technique and also the gain in an Yb-sensitized-Er material. The demonstrated high-gain chip-scale TFLN amplifier is promising for interfacing with established lithium niobate integrated devices, greatly extending the spectrum of TFLN photonic applications.

Spectral broadening of a mixed Nd: CYGA crystal with tunable laser operation beyond 1100†nm.

A broader emission band of the novel Nd: CaY0.9Gd0.1AlO4 (Nd: CYGA) mixed crystal was proved by the introduction of Gd3+ ions in Nd: CaYAlO4 (Nd: CYA) crystal, and a diode-pump tunable Nd: CYGA laser operation was achieved successfully. Due to the broad emission spectrum with the full width at half maximum (FWHM) of 23 nm, a tuning range of 32 nm from 1075 nm to 1107 nm was achieved, and the results were considered to be the first time for Nd-doped crystals to be tuned to such a long wavelength at 1107 nm, which promotes the further development of near-infrared tunable lasers. The maximum output power was 1.05 W at the center wavelength of 1081.4 nm, corresponding to the slope efficiency of 26.6%. Furthermore, we also demonstrated a continuous-wave 1105 nm laser with the output power of 53 mW. Our work indicates that Nd: CYGA crystal is a potential Nd-doped gain medium for generating all-solid-state near-infrared lasers.

Intense 2.1-4.2 µm broadband emission of Co/Er:PbF2 mid-infrared laser crystal.

A novel mid-infrared (MIR) laser crystal Co/Er:PbF2 was successfully grown. The use of Er3+ ion co-doping to sensitize a Co2+ ion and enhance the 2.1-4.2 µm broadband MIR emission of the Co2+ ion in a PbF2 crystal was studied for the first time, to the best of our knowledge. The Er3+ ion was demonstrated to be an effective sensitizer of the Co2+ ion, making the Co/Er:PbF2 crystal propitious to be pumped by commercialized laser diodes. Furthermore, with Er3+ ion co-doping, the local symmetry of Co2+ and Er3+ ions was seriously distorted, thereby enhancing the 2.1-4.2 µm MIR emissions. This study provides a path for designing MIR laser materials with optimal performance.

Yb:GdScO3 crystal for efficient ultrashort pulse lasers.

We present, to the best of our knowledge, the first demonstration of thermal, optical, and laser properties of Yb:GdScO3 for potentially efficient ultrashort pulse lasers. The stimulated emission cross section at 1025 nm (E//c) is 0.46×10-20cm2 with the emission band width of 85 nm, even broader than the well-known Yb:CaGdAlO4. It has quite a high thermal conductivity of 5.54W/(m⋅K) at 50°C, comparable with Yb:YAG. In the continuous-wave regime, the maximum output power of 13.45 W at 1063.9 nm was generated with the optical-to-optical efficiency of 63.3%. These results suggest that the Yb:GdScO3 crystal is a promising candidate for ultrashort pulse lasers.

Antagonistic effect of VDR/CREB1 pathway on cadmium-induced apoptosis in porcine spleen.

Cadmium (Cd) is a toxic trace element that can enter the environment with industrial waste and accumulate in the body but the health effects of Cd on ternary pigs are still lacking in research. In order to explore the effect of Cd on the apoptosis of pig spleen and its mechanism, this study chose ternary pig as the research object to detect relevant indicators in pig spleen under Cd exposure. The results of this study showed that Cd exposure can induce apoptosis by promoting the absorption of various toxic trace elements in the spleen and inducing oxidative stress. We also found that the mechanism of Cd-induced apoptosis is closely related to the VDR/CREB1 pathway. On the one hand, Cd exposure can activate VDR, and indirectly regulate the CYP family, affecting the normal function of the spleen. On the other hand, VDR and its downstream genes antagonize the toxicity of Cd by maintaining the stability of the mitochondrial-related endoplasmic reticulum membrane structure. Our research will help researchers to further understand the physiological toxicity of Cd.

Astilbin protects chicken peripheral blood lymphocytes from cadmium-induced necroptosis via oxidative stress and the PI3K/Akt pathway.

Astilbin (ASB), a dihydroflavonol glycoside, is widely found in a variety of plants and in functional foods and acts as a powerful antioxidant. The aim of this study was to investigate the underlying mechanisms involved in the antagonistic effects of ASB on cadmium (Cd)-induced necroptosis in chicken peripheral blood lymphocytes. Peripheral blood lymphocytes were aseptically collected from Roman white hens and then randomly divided into five groups: the control group was incubated without additional reagents, while the other groups were incubated with Cd, ASB, a combination of Cd and ASB, and 0.1% DMSO. After a 24 h treatment, cell samples were collected. The results showed that some morphological changes consistent with necroptosis were observed in the Cd-treated groups, suggesting the occurrence of necroptosis. Simultaneously, antioxidant activity markers (CAT, SOD, GSH, GSH-px, and T-AOC) decreased and indicators of oxidative stress (MDA, iNOS, NO, H2O2, ·OH and ROS) increased. The production of ROS induced the activation of the PI3K/Akt signaling pathway, as the expression levels of PI3K, Akt and PDK1 were significantly elevated. Additionally, the expression levels of RIPK3, RIPK1, MLKL, TAK1, TAB2 and TAB3 were increased and that of Caspase-8 was decreased, which could cause the necroptosis. However, the most important our results was that ASB supplements remarkably attenuated the Cd-induced effects. We conclude that the Cd treatment promoted an imbalance of the antioxidant status and activated the PI3K/Akt pathway, leading to necroptosis in chicken peripheral blood lymphocytes, and that ASB was able to partially ameliorate the effect of Cd-induced necroptosis.

339 J high-energy Ti:sapphire chirped-pulse amplifier for 10 PW laser facility.

We report on the laser pulse output of 339 J centered at 800 nm from a chirped-pulse amplification (CPA) Ti:sapphire laser system at the Shanghai Superintense Ultrafast Laser Facility. The experimental results demonstrated that the parasitic lasing as well as the transverse amplified spontaneous emission of the homemade 235-mm-diameter Ti:sapphire final amplifier were suppressed successfully via the temporal dual-pulse pumped scheme and the index-matching liquid cladding technique. The maximum pump-to-signal conversion efficiency of 32.1% was measured for the final amplifier. With a compressor transmission efficiency of 64% and a compressed pulse duration of 21 fs obtained for the sample light at a lower energy level, this laser system could potentially generate a compressed laser pulse with a peak power of 10.3 PW. The experimental results represent significant progress with respect to the CPA laser.

Sensitization and deactivation effects of Nd3+on the Ho3+ : 3.9 µm emission in a PbF2 crystal.

The use of Nd3+ codoping for sensitizing the Ho3+ ion and enhancing the ∼3.9 µm emission from Ho3+:I55→I65 was investigated in the PbF2 crystal for the first time, to the best of our knowledge. The ∼3.9 µm fluorescence emission properties and energy transfer mechanism of the as-grown crystals were investigated. The results show that the Nd3+ ion can act as a sensitizer to the Ho3+ ion, providing an efficient excitation channel, making the Ho3+/Nd3+:PbF2 crystal propitious to be pumped by commercialized InGaAs laser diodes (LDs). Moreover, an enhanced ∼3.9 µm emission was obtained in the Ho3+/Nd3+:PbF2 crystal due to the codoping of Nd3+ ions, leading to an efficient energy transfer from a lower laser level of Ho3+:I65 to Nd3+:I15/24, while having little influence on the higher laser level of Ho3+:I55. These advantageous spectroscopic characteristics indicate that the Ho3+/Nd3+:PbF2 crystal might have potential application in ∼3.9 µm mid-infrared lasers under a conventional 808 nm LD pump.

Diode-end-pumped Ho, Pr:LiLuF4 bulk laser at 2.95 µm.

A diode-end-pumped continuous-wave (CW) and passively Q-switched Ho, Pr:LiLuF4 (Ho, Pr:LLF) laser operation at 2.95 µm was demonstrated for the first time, to the best of our knowledge. The maximum CW output power was 172 mW. By using a monolayer graphene as the saturable absorber, the passively Q-switched operation was realized, in which regimes with the highest output power, the shortest pulse duration, and the maximum repetition rate were determined to be 88 mW, 937.5 ns, and 55.7 kHz, respectively. The laser beam quality factor M2 at the maximum CW output power were measured to be Mx2=1.48 and My2=1.47.

Enhanced 2.7 µm mid-infrared emissions of Er3+ via Pr3+ deactivation and Yb3+ sensitization in LiNbO3 crystal.

The use of Pr3+ codoping for enhancement of the transition of Er3+: 4I11/2 → 4I13/2 2.7 µm emissions was investigated in the Er/Yb codoped LiNbO3 crystal for the first time. It is found that the codoped of Pr3+ ion in Er3+, Yb3+ and Pr3+ triply doped LiNbO3 crystal (Er/Yb/Pr: LN) greatly enhances Er3+: 2.7 µm emission under excitation of a common 970 nm laser diode, depopulates the lower laser level of Er3+:4I13/2, and has little influence on the higher laser level of Er3+:4I11/2 at the same time for population inversion. The 2.7 µm emission characteristics and energy transfer were investigated in detail. The energy transition efficiency from lower laser level of Er3+:4I13/2 to Pr3+:3F4 level is as high as 0.42, indicating that the Pr3+ ion is an effective deactivation ion for Er3+ ion in LiNbO3 crystal. These results suggest that Er/Yb/Pr: LiNbO3 crystal may become an attractive host for developing solid state lasers at around 2.7 µm under a conventional 970 nm LD pump.

Enhanced emission of 2.86 µm from diode-pumped Ho(3+)/Yb(3+)-codoped PbF(2) crystal.

A novel Ho(3+)Yb(3+)-codoped PbF(2) mid-IR laser crystal was successfully grown and analyzed. Enhanced emission at 2.86 µm was observed from the crystal under excitation of a common 970 nm laser diode for the first time. The effect of Yb(3+) codoping on the 2.86 µm photoluminescence of Ho(3+) was investigated. In comparison to Ho(3+)-singly doped PbF(2) crystal, the Ho(3+)/Yb(3+)-codoped PbF(2) crystal possessed comparable quantum efficiency (88.8%), and fluorescence branching ratio (20.52%) along with a larger calculated emission cross section (1.90×10(-20) cm(2)) corresponding to the laser transition (5)I(6)→(5)I(7) of Ho(3+). It was found that the introduced Yb(3+) enhanced the 2.86 µm emission by depopulating the Ho(3+):(5)I(7) level. The energy transfer (ET) efficiency from Yb(3+):(2)F(5/2) to Ho(3+):(5)I(6) is as high as 96.7%, indicating that Yb(3+) ion is an effective sensitizer for Ho(3+) ion in PbF(2) crystal. These results suggest that Ho(3+)/Yb(3+)-codoped PbF(2) crystal may become an attractive host for developing solid state lasers at around 2.86 µm under a conventional 970 nm LD pump.

Intense 2.89 µm emission from Dy³âº/Yb³âº-codoped PbF2 crystal by 970 nm laser diode pumping.

A novel Dy(3+)/Yb(3+) co-doped PbF2 mid-IR laser crystal was successfully grown using the vertical Bridgman method. Efficient emission at around 3 µm from the crystal was observed under excitation of a conventional 970 nm laser diode (LD). The energy transfer efficiency from Yb(3+) to Dy(3+) in Dy(3+)/Yb(3+):PbF2 crystal is as high as (97.7±0.3)%. It is also found that the Dy(3+)/Yb(3+):PbF2 crystal possesses long fluorescence lifetime (15.4±0.2) ms, high quantum efficiency (95.0±0.3)%, and large emission cross section (1.37±0.11)×10(-20) cm2 corresponding to the stimulated emission of Dy(3+):(6)H(13/2)→(6)H(15/2) transition. Additionally, the phonon energy of the crystal was analyzed by the Raman spectrum. These results indicate that Dy(3+)/Yb(3+):PbF2 crystal may become a promising material for 3 µm solid state lasers under a conventional 970 nm LD pump.

Fabrication and characterization of cerium-doped terbium gallium garnet with high magneto-optical properties.

High optical quality (Tb((1-x))Ce(x))3Ga5O12 (TCGG) single crystal has been grown by the Czochralski method. The optical and magneto-optical properties of the TCGG are analyzed in detail and the Verdet constant (V) of TCGG is compared with that of undoped terbium gallium garnet (TGG) crystal. TCGG presents a very high transmittance, particularly in the visible-near infrared (VIS-NIR) region, and its V is obviously larger than that of TGG in the VIS-NIR region. The figure of merit and optical features point out the superior characteristics of TCGG with respect to TGG.

760 fs diode-pumped mode-locked laser with Yb:LuAG crystal at 1032 nm.

In this study, we experimentally demonstrate the generation of 760 fs pulse duration from a diode-pumped Yb:LuAG mode-locked laser at 1032 nm. At the repetition rate of 58.6 MHz, the maximum average power of 1.07 W was obtained, corresponding to the peak power of 24 kW. To our knowledge, these results represent the shortest pulse duration and highest peak power ever obtained for a 1032 nm mode-locked laser with Yb:LuAG crystal.