RESUMO
We report a simple and reproducible method to fabricate switchable Ag(2)S devices. The alpha-Ag(2)S thin films are produced by a sulfurization process after silver deposition on an Si substrate. Structure and composition of the Ag(2)S are characterized using XRD and RBS. Our samples show semiconductor behaviour at low bias voltages, whereas they exhibit reproducible bipolar resistance switching at higher bias voltages. The transition between both types of behaviour is observed by hysteresis in the I-V curves, indicating decomposition of the Ag(2)S, increasing the Ag(+) ion mobility. The as-fabricated Ag(2)S samples are a good candidate for future solid state memory devices, as they show reproducible memory resistive properties and they are fabricated by an accessible and reliable method.
Assuntos
Cristalização/métodos , Eletroquímica/métodos , Nanoestruturas/química , Nanoestruturas/ultraestrutura , Nanotecnologia/métodos , Compostos de Prata/química , Condutividade Elétrica , Substâncias Macromoleculares/química , Teste de Materiais , Conformação Molecular , Tamanho da Partícula , Semicondutores , Propriedades de SuperfícieRESUMO
A compact, two-stage nanomanipulator was designed and built for use inside a scanning electron microscope. It consists of a fine stage employing piezostacks that provide a 15 microm range in three dimensions and a coarse stage based on commercially available stick-slip motors. Besides the fabrication of enhanced probes for scanning probe microscopy and the enhancement of electron field emitters, other novel manipulation processes were developed, such as locating, picking up, and positioning small nanostructures with an accuracy of approximately 10 nm. In combination with in situ I-V experiments, welding, and etching, this results in a multipurpose nanofactory, enabling a new range of experiments.
RESUMO
The high speed performance of a scanning probe microscope (SPM) is improved if a microelectromechanical systems (MEMS) device is employed for the out-of-plane scanning motion. We have carried out experiments with MEMS high-speed z-scanners (189 kHz fundamental resonance frequency) in both atomic force microscope and scanning tunneling microscope modes. The experiments show that with the current MEMS z-scanner, lateral tip speeds of 5 mm/s can be achieved with full feedback on surfaces with significant roughness. The improvement in scan speed, obtained with MEMS scanners, increases the possibilities for SPM observations of dynamic processes. Even higher speed MEMS scanners with fundamental resonance frequencies in excess of a megahertz are currently under development.
Assuntos
Sistemas Microeletromecânicos/instrumentação , Microscopia de Varredura por Sonda/instrumentação , Simulação por Computador , Desenho de Equipamento , Retroalimentação , Análise de Elementos Finitos , Microscopia de Força Atômica/instrumentação , Microscopia Eletrônica de Varredura/instrumentação , Microscopia de Tunelamento/instrumentação , Movimento (Física) , Fatores de TempoRESUMO
Scanning probe microscopy is a frequently used nanometer-scale surface investigation technique. Unfortunately, its applicability is limited by the relatively low image acquisition speed, typically seconds to minutes per image. Higher imaging speeds are desirable for rapid inspection of samples and for the study of a range of dynamic surface processes, such as catalysis and crystal growth. We have designed a new high-speed scanning probe microscope (SPM) based on micro-electro mechanical systems (MEMS). MEMS are small, typically micrometer size devices that can be designed to perform the scanning motion required in an SPM system. These devices can be optimized to have high resonance frequencies (up to the MHz range) and have very low mass (10(-11)kg). Therefore, MEMS can perform fast scanning motion without exciting resonances in the mechanical loop of the SPM, and hence scan the surface without causing the image distortion from which conventional piezo scanners suffer. We have designed a MEMS z-scanner which we have integrated in commercial AFM (atomic force microscope) and STM (scanning tunneling microscope) setups. We show the first successful AFM experiments.
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We used polarized neutron reflectometry to determine the temperature dependence of the magnetization of thin AuFe films with 3% Fe concentration. We performed the measurements in a large magnetic field of 6 T in a temperature range from 295 to 2 K. For the films in the thickness range from 500 to 20 nm we observed a Brillouin-type behavior from 295 K down to 50 K and a constant magnetization of about 0.9 micro(B) per Fe atom below 30 K. However, for the 10 nm thick film we observed a Brillouin-type behavior down to 20 K and a constant magnetization of about 1.3 micro(B) per Fe atom below 20 K. These experiments are the first to show a finite-size effect in the magnetization of single spin-glass films in large magnetic fields. Furthermore, the ability to measure the deviation from the paramagnetic behavior enables us to prove the existence of the spin-glass state where other methods relying on a cusp-type behavior fail.
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We have performed depth dependent muon-spin-rotation and -relaxation studies of the dynamics of single layer films of AuFe and CuMn spin glasses as a function of thickness and of its behavior as a function of distance from the vacuum interface (5-70 nm). A significant reduction in the muon-spin relaxation rate as a function of temperature with respect to the bulk material is observed when the muons are stopped near (5-10 nm) the surface of the sample. A similar reduction is observed for the whole sample if the thickness is reduced to, e.g., 20 nm and less. This reflects an increased impurity spin dynamics (incomplete freezing) close to the surface although the freezing temperature is only modestly affected by the dimensional reduction.
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We have developed a picovoltmeter using a Nb dc superconducting quantum interference device for measuring the flux-flow voltage from a small number of vortices moving through a submicron weak-pinning superconducting channel. We have applied this picovoltmeter to measure the vortex response in a single channel arranged in a circle on a Corbino disk geometry. The circular channel allows the vortices to follow closed orbits without encountering any sample edges, thus eliminating the influence of entry barriers.
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In (S/F) hybrids the suppression of superconductivity by the exchange field h(ex) of the ferromagnet can be partially lifted when different directions of h(ex) are sampled simultaneously by the Cooper pair. In F/S/F trilayers where the magnetization directions of the F layers can be controlled separately, this leads to the so-called spin switch. Here we show that domain walls in a single F layer yield a similar effect. We study the transport properties of Ni(0.80)Fe(0.20)/Nb bilayers structured in strips of different sizes. For large samples a clear enhancement of superconductivity takes place in the resistive transition, in the very narrow field range (order of 0.5 mT) where the magnetization of the Py layer switches and many domains are present. This effect is absent in microstructured samples.
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We report a new nonlocal effect in vortex matter, where an electric current confined to a small region of a long and sufficiently narrow superconducting wire causes vortex flow at distances hundreds of intervortex separations away. The observed remote traffic of vortices is attributed to a very efficient transfer of a local strain through the one-dimensional vortex lattice (VL), even in the presence of disorder. We also observe mesoscopic fluctuations in the nonlocal vortex flow, which arise due to "traffic jams" when vortex arrangements do not match a local geometry of a superconducting channel.