Thickness- and Field-Dependent Magnetic Domain Evolution in van der Waals Fe3GaTe2.

The discovery of room-temperature ferromagnetism in van der Waals (vdW) materials opens new avenues for exploring low-dimensional magnetism and its applications in spintronics. Recently, the observation of the room-temperature topological Hall effect in the vdW ferromagnet Fe3GaTe2 suggests the possible existence of room-temperature skyrmions, yet skyrmions have not been directly observed. In this study, real-space imaging was employed to investigate the domain evolution of the labyrinth and skyrmion structure. First, Néel-type skyrmions can be created at room temperature. In addition, the influence of flake thickness and external magnetic field (during field cooling) on both labyrinth domains and the skyrmion lattice is unveiled. Due to the competition between magnetic anisotropy and dipole interactions, the specimen thickness significantly influences the density of skyrmions. These findings demonstrate that Fe3GaTe2 can host room-temperature skyrmions of various sizes, opening up avenues for further study of magnetic topological textures at room temperature.

Antiferroelectricity-Induced Negative Thermal Expansion in Double Perovskite Pb2 CoMoO6.

Materials with negative thermal expansion (NTE) attract significant research attention owing to their unique physical properties and promising applications. Although ferroelectric phase transitions leading to NTE are widely investigated, information on antiferroelectricity-induced NTE remains limited. In this study, single-crystal and polycrystalline Pb2 CoMoO6 samples are prepared at high pressure and temperature conditions. The compound crystallizes into an antiferroelectric Pnma orthorhombic double perovskite structure at room temperature owing to the opposite displacements dominated by Pb2+ ions. With increasing temperature to 400 K, a structural phase transition to cubic Fm-3m paraelectric phase occurs, accompanied by a sharp volume contraction of 0.41%. This is the first report of an antiferroelectric-to-paraelectric transition-induced NTE in Pb2 CoMoO6 . Moreover, the compound also exhibits remarkable NTE with an average volumetric coefficient of thermal expansion αV = -1.33 × 10-5 K-1 in a wide temperature range of 30-420 K. The as-prepared Pb2 CoMoO6 thus serves as a prototype material system for studying antiferroelectricity-induced NTE.

Tuning Piezoelectricity via Thermal Annealing at a Freestanding Ferroelectric Membrane.

Tuning the ferroelectric domain structure by a combination of elastic and electrostatic engineering provides an effective route for enhanced piezoelectricity. However, for epitaxial thin films, the clamping effect imposed by the substrate does not allow aftergrowth tuning and also limits the electromechanical response. In contrast, freestanding membranes, which are free of substrate constraints, enable the tuning of a subtle balance between elastic and electrostatic energies, giving new platforms for enhanced and tunable functionalities. Here, highly tunable piezoelectricity is demonstrated in freestanding PbTiO3 membranes, by varying the ferroelectric domain structures from c-dominated to c/a and a domains via aftergrowth thermal treatment. Significantly, the piezoelectric coefficient of the c/a domain structure is enhanced by a factor of 2.5 compared with typical c domain PbTiO3. This work presents a new strategy to manipulate the piezoelectricity in ferroelectric membranes, highlighting their great potential for nano actuators, transducers, sensors and other NEMS device applications.

Two-dimensional electronic structure for high thermoelectric performance in halide perovskite Cs2Au(I)Au(III)I6.

Pb- or Sn-based halide perovskites usually exhibit poor thermoelectric performance, arising from their low electrical conductivity or oxidation state instability. It is highly desired to search for new halide perovskites with good thermoelectric properties. In this work, the thermally stable mixed-valence halide perovskite Cs2Au(I)Au(III)I6 is revealed to be a highly promising thermoelectric material with high in-plane power factor and ultralow lattice thermal conductivity using first-principles calculations. The high in-plane power factor is achieved due to the novel two-dimensional electronic structure near the Fermi level driven by the weak interaction between AuI-5d and I-p orbitals. In addition, the small group velocities and short phonon lifetimes give rise to ultralow lattice thermal conductivity in Cs2Au(I)Au(III)I6. These excellent electronic and thermal properties lead to a high ZT value, which is close to 1 at 300 K and ∼4 at 800 K. Our results suggest that the 2D electronic structure from the weak interaction between d and p crystal orbitals is a promising route to design high-efficiency halide double perovskite thermoelectric materials.

Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers.

Interfacial 'dead' layers between metals and ferroelectric thin films generally induce detrimental effects in nanocapacitors, yet their peculiar properties can prove advantageous in other electronic devices. Here, we show that dead layers with low Li concentration located at the surface of LiNbO3 ferroelectric materials can function as unipolar selectors. LiNbO3 mesa cells were etched from a single-crystal LiNbO3 substrate, and Pt metal contacts were deposited on their sides. Poling induced non-volatile switching of ferroelectric domains in the cell, and volatile switching in the domains in the interfacial (dead) layers, with the domain walls created within the substrate being electrically conductive. These features were also confirmed using single-crystal LiNbO3 thin films bonded to SiO2/Si wafers. The fabricated nanoscale mesa-structured memory cell with an embedded interfacial-layer selector shows a high on-to-off ratio (>106) and high switching endurance (~1010 cycles), showing potential for the fabrication of crossbar arrays of ferroelectric domain wall memories.

Size-dependent strain-engineered nanostructures in MoS2monolayer investigated by atomic force microscopy.

The strain has been employed for controlled modification of electronical and mechanical properties of two-dimensional (2D) materials. However, the thermal strain-engineered behaviors of the CVD-grown MoS2have not been systematically explored. Here, we investigated the strain-induced structure and properties of CVD-grown triangular MoS2flakes by several advanced atomic force microscopy. Two different kinds of flakes with sharp-corner or vein-like nanostructures are experimentally discovered due to the size-dependent strain behaviors. The critical size of these two kinds of flakes can be roughly estimated at âˆ¼17µm. Within the small flakes, the sharp-corner regions show specific strain-modified properties due to the suffering of large tensile strain. While in the large MoS2flakes, the complicated vein-like nanoripple structures were formed due to the interface slipping process under the larger tensile strain. Our work not only demonstrates the size-specific strain behaviors of MoS2flakes but also sheds light on the artificial design and preparation of strain-engineered nanostructures for the devices based on the 2D materials.

Extreme In-Plane Thermal Conductivity Anisotropy in Titanium Trisulfide Caused by Heat-Carrying Optical Phonons.

High in-plane anisotropies arise in layered materials with large structural difference along different in-plane directions. We report an extreme case in layered TiS3, which features tightly bonded atomic chains along the b-axis direction, held together by weaker, interchain bonding along the a-axis direction. Experiments show thermal conductivity along the chain twice as high as between the chain, an in-plane anisotropy higher than any other layered materials measured to date. We found that in contrast to most other materials, optical phonons in TiS3 conduct an unusually high portion of heat (up to 66% along the b-axis direction). The large dispersiveness of optical phonons along the chains, contrasted to many fewer dispersive optical phonons perpendicular to the chains, is the primary reason for the observed high anisotropy in thermal conductivity. The finding discovers materials with unusual thermal conduction mechanism, as well as provides new material platforms for potential heat-routing or heat-managing devices.

Thickness-Dependent In-Plane Polarization and Structural Phase Transition in van der Waals Ferroelectric CuInP2 S6.

van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intralayer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high-density storage devices. With the thickness becoming thinner, the competition between the surface energy, depolarization field, and interfacial chemical bonds may give rise to the modification of ferroelectricity and crystalline structure, which has limited investigations. In this work, combining the piezoresponse force microscope scanning, contact resonance imaging, the existence of the intrinsic in-plane polarization in vdW ferroelectrics CuInP2 S6 single crystals is reported, whereas below a critical thickness between 90 and 100 nm, the in-plane polarization disappears. The Young's modulus also shows an abrupt stiffness at the critical thickness. Based on the density functional theory calculations, these behaviors are ascribed to a structural phase transition from monoclinic to trigonal structure, which is further verified by transmission electron microscope technique. These findings demonstrate the foundational importance of structural phase transition for enhancing the rich functionality and broad utility of vdW ferroelectrics.

Mechanically Tunable Near-Field Radiative Heat Transfer between Monolayer Black Phosphorus Sheets.

As a cutting-edge two-dimensional (2D) material, black phosphorous (BP) has been demonstrating a promising performance in the field of near-field radiative heat transfer (NFRHT) due to the excitation ability of its surface plasmon polaritons. Here, we have systematically demonstrated the effect of mechanical strain on the NFRHT between two separate BP sheets. First-principles calculations predict that a certain amount of mechanical strain (4% along biaxial or 6% along zigzag (ZZ)) can trigger an orthogonal switch of anisotropic optical conductivity by regulating the effective mass of electrons. The mismatched coupling of surface plasmon polaritons between the pristine and strained BP results in a 73% change in NFRHT. The studied mechanically tunable NFRHT unfolds a new degree of freedom for controlling the near-field heat transfer and sheds light on an invaluable approach to designing two-dimensional material-based thermal and electrical applications.

Structural stability and optoelectronic properties of tetragonal MAPbI3 under strain.

In recent years, organic-inorganic hybrid perovskites have attracted wide attention due to their excellent optoelectronic properties in the application of optoelectronic devices. In the manufacturing process of perovskite solar cells, perovskite films inevitably have residual stress caused by non-stoichiometry components and the external load. However, their effects on the structural stability and photovoltaic performance of perovskite solar cells are still not clear. In this work, we investigated the effects of external strain on the structural stability and optoelectronic properties of tetragonal MAPbI3 by using the first-principles calculations. We found that the migration barrier of I- ion increases in the presence of compressive strain and decreases with tensile strain, indicating that the compressive strain can enhance the structural stability of halide perovskites. In addition, the light absorption and electronic properties of MAPbI3 under compressive strain are also improved. The variations of the band gap under triaxial and biaxial strains are consistent within a certain range of strain, resulting from the fact that the band edge positions are mainly influenced by the Pb-I bond in the equatorial plane. Our results provide useful guidance for realizing the commercial applications of MAPbI3-based perovskite solar cells.

Metallization of vanadium dioxide driven by large phonon entropy.

Phase competition underlies many remarkable and technologically important phenomena in transition metal oxides. Vanadium dioxide (VO2) exhibits a first-order metal-insulator transition (MIT) near room temperature, where conductivity is suppressed and the lattice changes from tetragonal to monoclinic on cooling. Ongoing attempts to explain this coupled structural and electronic transition begin with two alternative starting points: a Peierls MIT driven by instabilities in electron-lattice dynamics and a Mott MIT where strong electron-electron correlations drive charge localization. A key missing piece of the VO2 puzzle is the role of lattice vibrations. Moreover, a comprehensive thermodynamic treatment must integrate both entropic and energetic aspects of the transition. Here we report that the entropy driving the MIT in VO2 is dominated by strongly anharmonic phonons rather than electronic contributions, and provide a direct determination of phonon dispersions. Our ab initio calculations identify softer bonding in the tetragonal phase, relative to the monoclinic phase, as the origin of the large vibrational entropy stabilizing the metallic rutile phase. They further reveal how a balance between higher entropy in the metal and orbital-driven lower energy in the insulator fully describes the thermodynamic forces controlling the MIT. Our study illustrates the critical role of anharmonic lattice dynamics in metal oxide phase competition, and provides guidance for the predictive design of new materials.

Modulating the Electrical Transport in the Two-Dimensional Electron Gas at LaAlO_{3}/SrTiO_{3} Heterostructures by Interfacial Flexoelectricity.

Thin film flexoelectricity is attracting more attention because of its enhanced effect and potential application in electronic devices. Here we find that a mechanical bending induced flexoelectricity significantly modulates the electrical transport properties of the interfacial two-dimensional electron gas (2DEG) at the LaAlO_{3}/SrTiO_{3} (LAO/STO) heterostructure. Under variant bending states, both the carrier density and mobility of the 2DEG are changed according to the flexoelectric polarization direction, showing an electric field effect modulation. By measuring the flexoelectric response of LAO, it is found that the effective flexoelectricity in the LAO thin film is enhanced by 3 orders compared to its bulk. These results broaden the horizon of study on the flexoelectricity effect in the hetero-oxide interface and more research on the oxide interfacial flexoelectricity may be stimulated.

First-principles study of the structural, electronic, magnetic, and ferroelectric properties of a charge-ordered iron(ii)-iron(iii) formate framework.

Density functional theory calculations have been performed for the structural, electronic, magnetic, and ferroelectric properties of a mixed-valence Fe(ii)-Fe(iii) formate framework [NH2(CH3)2][FeiiiFeii(HCOO)6]. Recent experiments report a spontaneous electric polarization, and our calculations are in agreement with the reported experimental value. Furthermore, we shed light onto the microscopic mechanism leading to the observed value, as well as on how to possibly enhance the polarization. The interplay between charge ordering, dipolar ordering of DMA+ cations, and the induced structural distortions suggest new interesting directions to explore in these complex multifunctional hybrid perovskites.

Twin Crystal Induced near Zero Thermal Expansion in SnO2 Nanowires.

Knowledge of controllable thermal expansion is a fundamental issue in the field of materials science and engineering. Direct blocking of the thermal expansions in positive thermal expansion materials is a challenging but fascinating task. Here we report a near zero thermal expansion (ZTE) of SnO2 achieved from twin crystal nanowires, which is highly correlated to the twin boundaries. Local structural evolutions followed by pair distribution function revealed a remarkable thermal local distortion along the twin boundary. Lattice dynamics investigated by Raman scattering evidenced the hardening of phonon frequency induced by the twin crystal compressing, giving rise to the ZTE of SnO2 nanowires. Further DFT calculation of Grüneisen parameters confirms the key role of compressive stress on ZTE. Our results provide an insight into the thermal expansion behavior regarding to twin crystal boundaries, which could be beneficial to the applications.

Fracture mechanisms in multilayer phosphorene assemblies: from brittle to ductile.

The outstanding mechanical performance of nacre has stimulated numerous studies on the design of artificial nacres. Phosphorene, a new two-dimensional (2D) material, has a crystalline in-plane structure and non-bonded interaction between adjacent flakes. Therefore, multi-layer phosphorene assemblies (MLPs), in which phosphorene flakes are piled up in a staggered manner, may exhibit outstanding mechanical performance, especially exceptional toughness. Therefore, molecular dynamics simulations are performed to study the dependence of the mechanical properties on the overlap distance between adjacent phosphorene layers and the number of phosphorene flakes per layer. The results indicate that when the flake number is equal to 1, a transition of fracture patterns is observed by increasing the overlap distance, from a ductile failure controlled by interfacial friction to a brittle failure dominated by the breakage of covalent bonds inside phosphorene flakes. Moreover, the failure pattern can be tuned by changing the number of flakes in each phosphorene layer. The results imply that the ultimate strength follows a power law with the exponent -0.5 in terms of the flake number, which is in good agreement with our analytical model. Furthermore, the flake number in each phosphorene layer is optimized as 2 when the temperature is 1 K in order to potentially achieve both high toughness and strength. Moreover, our results regarding the relations between mechanical performance and overlap distance can be explained well using a shear-lag model. However, it should be pointed out that increasing the temperature of MLPs could cause the transition of fracture patterns from ductile to brittle. Therefore, the optimal flake number depends heavily on temperature to achieve both its outstanding strength and toughness. Overall, our findings unveil the fundamental mechanism at the nanoscale for MLPs as well as provide a method to design phosphorene-based structures with targeted properties via tunable overlap distance and flake number in phosphorene layers.

Revealing the role of thiocyanate anion in layered hybrid halide perovskite (CH3NH3)2Pb(SCN)2I2.

The effect of the SCN- ion on the structural, electronic, optical, and mechanical properties of the layered (MA)2Pb(SCN)2I2 (MA=CH3NH3+) perovskite is investigated by using first-principles calculations. Our results suggest that the introduction of SCN- ions at the apical positions gives rise to shorter Pb-S bond lengths, more distorted octahedra, and more hydrogen bonds, which have important effects on the electronic, optical, mechanical, and piezoelectric properties in (MA)2Pb(SCN)2I2. Furthermore, a strong relativistic Rashba splitting is induced due to the breaking of the inversion symmetry, which helps to suppress the carrier recombination and enhance the carrier lifetime. The analysis of mechanical properties reveals that the incorporation of SCN- ions is beneficial to strengthen Young's modulus of the perovskite materials and it enhances the piezoelectric properties. Our investigation suggests that doping SCN- ions into the perovskite materials could be a promising strategy to improve the stability and mechanical properties of organic-inorganic hybrid halide perovskite compounds.

Large Flexoelectric Anisotropy in Paraelectric Barium Titanate.

The bending-induced polarization of barium titanate single crystals has been measured with an aim to elucidate the origin of the large difference between theoretically predicted and experimentally measured flexoelectricity in this material. The results indicate that part of the difference is due to polar regions (short-range order) that exist above T(C) and up to T*≈200-225 °C. Above T*, however, the flexovoltage coefficient still shows an unexpectedly large anisotropy for a cubic material, with (001)-oriented crystals displaying 10 times more flexoelectricity than (111)-oriented crystals. Theoretical analysis shows that this anisotropy cannot be a bulk property, and we therefore interpret it as indirect evidence for the theoretically predicted but experimentally elusive contribution of surface piezoelectricity to macroscopic bending-induced polarization.

Mechanical manipulation for ordered topological defects.

Randomly distributed topological defects created during the spontaneous symmetry breaking are the fingerprints to trace the evolution of symmetry, range of interaction, and order parameters in condensed matter systems. However, the effective mean to manipulate topological defects into ordered form is elusive due to the topological protection. Here, we establish a strategy to effectively align the topological domain networks in hexagonal manganites through a mechanical approach. It is found that the nanoindentation strain gives rise to a threefold Magnus-type force distribution, leading to a sixfold symmetric domain pattern by driving the vortex and antivortex in opposite directions. On the basis of this rationale, sizeable mono-chirality topological stripe is readily achieved by expanding the nanoindentation to scratch, directly transferring the randomly distributed topological defects into an ordered form. This discovery provides a mechanical strategy to manipulate topological protected domains not only on ferroelectrics but also on ferromagnets/antiferromagnets and ferroelastics.

Ultralow Tip-Force Driven Sizable-Area Domain Manipulation through Transverse Flexoelectricity.

Deterministic control of ferroelectric domain is critical in the ferroelectric functional electronics. Ferroelectric polarization can be manipulated mechanically with a nano-tip through flexoelectricity. However, it usually occurs in a very localized area in ultrathin films, with possible permanent surface damage caused by a large tip-force. Here it is demonstrated that the deliberate engineering of transverse flexoelectricity offers a powerful tool for improving the mechanical domain switching. Sizable-area domain switching under an ultralow tip-force can be realized in suspended van der Waals ferroelectrics with the surface intact, due to the enhanced transverse flexoelectric field. The film thickness range for domain switching in suspended ferroelectrics is significantly improved by an order of magnitude to hundreds of nanometers, being far beyond the limited range of the substrate-supported ones. The experimental results and phase-field simulations further reveal the crucial role of the transverse flexoelectricity in the domain manipulation. This large-scale mechanical manipulation of ferroelectric domain provides opportunities for the flexoelectricity-based domain controls in emerging low-dimensional ferroelectrics and related devices.