Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory.

Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.

Controlled Nanopores in Thin Films of Nonstoichiometrically Supramolecularly Assembled Graft Copolymers.

Herein, nanometer-scale morphologies of graft-copolymer-like supramolecular thin films, composed of sulfonic acid terminated polystyrene (SPS) and poly(2-vinylpyridine) (P2VP), and their application to antireflection coatings were investigated. The intermolecular complexes of SPS and P2VP, formed through nonstoichiometric multiple hydrogen bonding between the sulfonic acid group of SPS and the nitrogen atom in pyridine unit of P2VP, occurring in film deposition allowed for the formation of spherical micelles (with SPS and P2VP as the corona and core, respectively) in the thin film. Interestingly, the domain size of the micelles was tunable from approximately 20 to 90 nm on average by controlling either the blend ratio of components or the concentration of polymer solution. Furthermore, nanoporous thin films could be easily prepared by removing the core of micelle-based nanostructures by using a simple solvent etching process, leaving sulfonic acid groups on the surface of nanopores, which can be utilized as potential functional sites. Those resultant nanoporous thin films were conveniently employed as an antireflection layer on a glass substrate, giving a maximum 97.8 % transmittance in the visible wavelength range.

Non-volatile ferroelectric memory with position-addressable polymer semiconducting nanowire.

One-dimensional nanowires (NWs) have been extensively examined for numerous potential nano-electronic device applications such as transistors, sensors, memories, and photodetectors. The ferroelectric-gate field effect transistors (Fe-FETs) with semiconducting NWs in particular in combination with ferroelectric polymers as gate insulating layers have attracted great attention because of their potential in high density memory integration. However, most of the devices still suffer from low yield of devices mainly due to the ill-control of the location of NWs on a substrate. NWs randomly deposited on a substrate from solution-dispersed droplet made it extremely difficult to fabricate arrays of NW Fe-FETs. Moreover, rigid inorganic NWs were rarely applicable for flexible non-volatile memories. Here, we present the NW Fe-FETs with position-addressable polymer semiconducting NWs. Polymer NWs precisely controlled in both location and number between source and drain electrode were achieved by direct electrohydrodynamic NW printing. The polymer NW Fe-FETs with a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) exhibited non-volatile ON/OFF current margin at zero gate voltage of approximately 10(2) with time-dependent data retention and read/write endurance of more than 10(4) seconds and 10(2) cycles, respectively. Furthermore, our device showed characteristic bistable current hysteresis curves when being deformed with various bending radii and multiple bending cycles over 1000 times.

High-temperature operating non-volatile memory of printable single-wall carbon nanotubes self-assembled with a conjugate block copolymer.

Printable non-volatile polymer memories are fabricated with solution-processed nanocomposite films of poly(styrene-block-paraphenylene) (PS-b-PPP) and single-wall carbon nanotubes (SWNTs). The devices show stable data retention at high temperatures of up to 100 °C without significant performance degradation due to the strong, non-destructive, and isomorphic π-π interactions between the SWNTs and PPP block.

Flexible multilevel resistive memory with controlled charge trap B- and N-doped carbon nanotubes.

B- and N-doped carbon nanotubes (CNTs) with controlled workfunctions were successfully employed as charge trap materials for solution processable, mechanically flexible, multilevel switching resistive memory. B- and N-doping systematically controlled the charge trap level and dispersibility of CNTs in polystyrene matrix. Consequently, doped CNT device demonstrated greatly enhanced nonvolatile memory performance (ON-OFF ratio >10(2), endurance cycle >10(2), retention time >10(5)) compared to undoped CNT device. More significantly, the device employing both B- and N-doped CNTs with different charge trap levels exhibited multilevel resistive switching with a discrete and stable intermediate state. Charge trapping materials with different energy levels offer a novel design scheme for solution processable multilevel memory.

Effects of post thermal annealing on the electrical properties of vertical type organic thin film transistors using poly(3-hexylthiophene) and its application in organic light emitting transistor.

We have fabricated the vertical type organic thin film transistor (OTFT) using electrically conductive poly(3-hexylthiophene) (P3HT) as a p-type organic material. Effects of post thermal annealing and thickness of active layer on the performance of vertical type transistors were investigated. Especially, the correlation between carrier mobility of P3HT after post thermal annealing and static characteristics of the transistor was studied. Carrier mobility was calculated by space charge limited current (SCLC) model from the I-V curves of the prepared device. The vertical type OTFT after post thermal annealing at 120 degrees C (Tg) showed high current of 0.383 mA and on-off ratio of 22.5 at a low gate voltage of +2.0 V. Additionally, we report on emission characteristics from the vertical type transistor using P3HT.

Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes.

The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 10(4), a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period.

Highly reliable top-gated thin-film transistor memory with semiconducting, tunneling, charge-trapping, and blocking layers all of flexible polymers.

The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 10(4), read and write endurance cycles over 100, and time-dependent data retention of 10(8) s, even when fabricated on a mechanically flexible plastic substrate.

Electrically Tunable Soft-Solid Block Copolymer Structural Color.

One-dimensional photonic crystals based on the periodic stacking of two different dielectric layers have been widely studied, but the fabrication of mechanically flexible polymer structural color (SC) films, with electro-active color switching, remains challenging. Here, we demonstrate free-standing electric field tunable ionic liquid (IL) swollen block copolymer (BCP) films. Placement of a polymer/ionic liquid film-reservoir adjacent to a self-assembled poly(styrene-block-quaternized 2-vinylpyridine) (PS-b-QP2VP) copolymer SC film allowed the development of red (R), green (G), and blue (B) full-color SC block copolymer films by swelling of the QP2VP domains by the ionic liquid associated with water molecules. The IL-polymer/BCP SC film is mechanically flexible with excellent color stability over several days at ambient conditions. The selective swelling of the QP2VP domains could be controlled by both the ratio of the IL to a polymer in the gel-like IL reservoir layer and by an applied voltage in the range of -3 to +6 V using a metal/IL reservoir/SC film/IL reservoir/metal capacitor type device.

Self-assembled block copolymer micelles with silver-carbon nanotube hybrid fillers for high performance thermal conduction.

The development of polymer-filled composites with an extremely high thermal conductivity (TC) that is competitive with conventional metals is in great demand due to their cost-effective process, light weight, and easy shape-forming capability. A novel polymer composite with a large thermal conductivity of 153 W m(-1) K(-1) was prepared based on self-assembled block copolymer micelles containing two different fillers of micron-sized silver particles and multi-walled carbon nanotubes. Simple mechanical mixing of the components followed by conventional thermal compression at a low processing temperature of 160 °C produced a novel composite with both structural and thermal stability that is durable for high temperature operation up to 150 °C as well as multiple heating and cooling cycles of ΔT = 100 °C. The high performance in thermal conduction of our composite was mainly attributed to the facile deformation of Ag particles during the mixing in a viscous thermoplastic medium, combined with networked carbon nanotubes uniformly dispersed in the nanoscale structural matrix of block copolymer micelles responsible for its high temperature mechanical stability. Furthermore, micro-imprinting on the composite allowed for topographically periodic surface micropatterns, which offers broader suitability for numerous micro-opto-electronic systems.

Polymer/Perovskite-type nanoparticle multilayers with multielectric properties prepared from ligand addition-induced layer-by-layer assembly.

We introduce an adsorption mechanism for a layer-by-layer (LbL) assembly (i.e., a ligand addition-induced LbL assembly) and demonstrate that the (polymer/perovskite nanoparticle (NP))n nanocomposite films based on the ligand addition LbL exhibit ferroelectric and resistive switching properties. Oleic acid (OA)-stabilized BaTiO3 NPs (OA-BTO NPs) with a size of approximately 8 nm were LbL-assembled with amine-functionalized dendrimers (NH2-dendrimers) using the high affinity between NH2 moieties and Ti ions. The ferroelectric properties of the (NH2-dendrimer/OA-BTO NP)n multilayers were generated by the Ti disorder in the OA-BTO NP unit cell despite the use of sub-10 nm OA-BTO NPs (i.e., OA-BTO NPs), which are near the critical size for ferroelectric properties. Additionally, the (NH2-dendrimer/OA-BTO NP)n multilayers sandwiched between the bottom (platinum) and top (silver or tungsten) electrodes exhibited a resistive switching memory at a relatively low operating voltage below 2 V with a switching speed of approximately 100 ns and an ON/OFF current ratio of approximately 10(4). Furthermore, the ferroelectric and resistive switching properties could be further improved by controlling the bilayer number (n). We believe that our approach can provide a basis for designing and exploiting multifunctional memory electronics based on a variety of perovskite NPs with ferroelectric properties.

Laser-induced nondestructive patterning of a thin ferroelectric polymer film with controlled crystals using Ge8Sb2Te11 alloy layer for nonvolatile memory.

We present a simple but robust nondestructive process for fabricating micropatterns of thin ferroelectric polymer films with controlled crystals. Our method is based on utilization of localized heat arising from thin Ge(8)Sb(2)Te(11) (GST) alloy layer upon exposure of 650 nm laser. The heat was generated on GST layer within a few hundred of nanosecond exposure and subsequently transferred to a thin poly(vinylidene fluoride-co-trifluoroethylene) film deposited on GST layer. By controlling exposure time and power of the scanned laser, ferroelectric patterns of one or two microns in size are fabricated with various shape. In the micropatterned regions, ferroelectric polymer crystals were efficiently controlled in both degree of the crystallinity and the molecular orientations. Nonvolatile memory devices with laser scanned ferroelectric polymer layers exhibited excellent device performance of large remnant polarization, ON/OFF current ratio and data retention. The results are comparable with devices containing ferroelectric films thermally annealed at least for 2 h, making our process extremely efficient for saving time. Furthermore, our approach can be conveniently combined with a number of other functional organic materials for the future electronic applications.

Organic one-transistor-type nonvolatile memory gated with thin ionic liquid-polymer film for low voltage operation.

As one of the most emerging next-generation nonvolatile memories, one-transistor (1T)-type nonvolatile memories are of great attention due to their excellent memory performance and simple device architecture suitable for high density memory arrays. In particular, organic 1T-type memories containing both organic semiconductors and insulators are further beneficial because of their mechanical flexibility with low cost fabrication. Here, we demonstrate a new flexible organic 1T-type memory operating at low voltage. The low voltage operation of a memory less than 10 V was obtained by employing a polymer gate insulator solution blended with ionic liquid as a charge storage layer. Ionic liquid homogeneously dissolved in a thin poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film gave rise to low voltage operation of a device due to its high capacitance. Simultaneously, stable charge trapping of either anions or cations efficiently occurred in the polymer matrix, dependent upon gate bias. Optimization of ionic liquid in PVDF-TrFE thus led to an air-stable and mechanically flexible organic 1T-type nonvolatile memory operating at programming voltage of ±7 V with large ON/OFF current margin of approximately 10(3), reliable time-dependent data retention of more than 10(4) seconds, and write/read endurance cycles of 80.

Non-volatile organic memory with sub-millimetre bending radius.

High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000 s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500 µm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

Wafer-scale arrays of nonvolatile polymer memories with microprinted semiconducting small molecule/polymer blends.

Nonvolatile ferroelectric-gate field-effect transistors (Fe-FETs) memories with solution-processed ferroelectric polymers are of great interest because of their potential for use in low-cost flexible devices. In particular, the development of a process for patterning high-performance semiconducting channel layers with mechanical flexibility is essential not only for proper cell-to-cell isolation but also for arrays of flexible nonvolatile memories. We demonstrate a robust route for printing large-scale micropatterns of solution-processed semiconducting small molecules/insulating polymer blends for high performance arrays of nonvolatile ferroelectric polymer memory. The nonvolatile memory devices are based on top-gate/bottom-contact Fe-FET with ferroelectric polymer insulator and micropatterned semiconducting blend channels. Printed micropatterns of a thin blended semiconducting film were achieved by our selective contact evaporation printing, with which semiconducting small molecules in contact with a micropatterned elastomeric poly(dimethylsiloxane) (PDMS) mold were preferentially evaporated and absorbed into the PDMS mold while insulating polymer remained intact. Well-defined micrometer-scale patterns with various shapes and dimensions were readily developed over a very large area on a 4 in. wafer, allowing for fabrication of large-scale printed arrays of Fe-FETs with highly uniform device performance. We statistically analyzed the memory properties of Fe-FETs, including ON/OFF ratio, operation voltage, retention, and endurance, as a function of the micropattern dimensions of the semiconducting films. Furthermore, roll-up memory arrays were produced by successfully detaching large-area Fe-FETs printed on a flexible substrate with a transient adhesive layer from a hard substrate and subsequently transferring them to a nonplanar surface.

Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation.

A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.