RESUMO
In this study, Nb2Se9, a one-dimensional (1D) material with van der Waals (vdWs) bonding, was synthesized by chemical vapor deposition (CVD). A liquid precursor was used to overcome the difficulty of controlling the length and density of Nb2Se9 by CVD due to the high melting point of Nb. Growth proceeded horizontally in a nano-ribbon shape on the substrate in the [100] direction, which had the most stable bonding distance, resulting in a preferred orientation of the (010) plane on the out-of-plane axis. Unlike that grown by conventional mechanical or chemical exfoliation, the nanoscale Nb2Se9 grown by CVD was uniform and did not have contaminants, such as dispersants, on its surface, meaning it could effectively induce reactions such as gas adsorption and desorption. It exhibited high sensitivity to NO2 gas adsorption at room temperature (27 °C), and its behavior was confirmed in a high-humidity environment. For the first time, this study demonstrated the possibility of synthesizing a vdWs bonding-based 1D material by CVD, which is expected to be widely used in a variety of low-dimensional materials and devices.
RESUMO
We synthesized ternary composition chalcogenide Ta2NiSe7, a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of Ta2NiSe7, the breakdown current density (JBD) according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage (VBD) increased, and at 18 nm thickness, 35 MA cm-2 of JBD was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material. By optimization of the exfoliation process, it is expected that through a theoretical model fitting, the JBD can be increased to about 356 MA cm-2. It is expected that the low-dimensional materials with ternary compositions proposed through this experiment can be used as candidates for current-carrying materials that are required for the miniaturization of various electronic devices.