Colossal Orbital Current Induced by Gradient Oxidation for High-Efficiency Magnetization Switching.

Orbital angular momentum flow can be used to develop a low-dissipation electronic information device by manipulating the orbital current. However, efficiently generating and fully harnessing orbital currents is a formidable challenge. In this study, an approach is presented that induces a colossal orbital current by gradient oxidation in Pt/Ta to enhance spin-orbit torque (SOT) and achieve high-efficiency magnetization switching. The maximum efficiency of the SOT before and after the gradient oxidation of Ta is improved relative to that of Pt by ≈600 and 1200%, respectively. The large SOT originates from the colossal orbital current because of the orbital Rashba-Edelstein effect induced by the gradient oxidation of Ta. In addition, a large spin-to-charge conversion efficiency is observed in yttrium iron garnet/Pt/TaOx because of the inverse orbital Rashba-Edelstein effect. Harnessing the orbital current can help effectively minimize the critical current density of the current-induced magnetization switching to 2.26-1.08 × 106 A cm-2, marking a 12-fold reduction compared to that using Pt. This findings provide a new path for research on low-dissipation spin-orbit devices and improve the tunability of orbital current generation.

Enhanced Spin-Orbit Torque Efficiency in Platinum-Gadolinium Oxide Nanocomposite Films.

Spin-orbit torque (SOT) has emerged as an effective means of manipulating magnetization. However, the current energy efficiency of SOT operation is inefficient due to low damping-like SOT efficiency per unit current bias. In this work, we dope conventional rare earth oxides, GdOy, into highly conductive platinum by magnetron sputtering to form a new group of spin Hall materials. A large damping-like spin-orbit torque (DL-SOT) efficiency of about 0.35 ± 0.013 is obtained in Pt0.70(GdOy)0.30 measured by the spin-torque ferromagnetic resonance (ST-FMR) technique, which is about five times that of pure Pt under the same conditions. The substantial enhancement of the spin Hall effect is revealed by theoretical analysis to be attributed to the strong side jump induced by the rare earth oxide GdOy impurities. Moreover, this large DL-SOT efficiency contributes to a low critical switching current density (8.0 × 106 A·cm-2 in the Pt0.70(GdOy)0.30 layer) in current-induced magnetization switching measurements. This systematic study on SOT switching properties suggests that Pt1-x(GdOy)x is an attractive spin current source with large DL-SOT efficiency for future SOT applications and provides another idea to regulate the spin Hall angle.

Splitting phenomenon of ferromagnetic resonance spectra in NiFe films deposited on periodically rippled sapphire substrates.

The splitting phenomenon of ferromagnetic resonance (FMR) spectra of Ni80Fe20 (NiFe) films deposited on periodically rippled sapphire substrates is studied experimentally and with the help of micromagnetic simulation. The analyses show that the splitting of FMR spectra is related to the periodic ripple topography of films. When the applied magnetic field is perpendicular to the ripple direction, the effective field of periodically rippled films becomes inhomogeneous. The splitting of ferromagnetic resonance spectra originates from localized FMR peaks corresponding to different regions with different effective field intensities in the rippled structure. Furthermore, the relative intensity and position between the split mode and the main FMR mode can be changed by designing ripple topography. This work would help understand the splitting phenomenon of FMR spectra for these NiFe films deposited on the periodically rippled sapphire substrates.

Structural and magnetic properties of Y3(GaAlFe)5O12 liquid-phase epitaxy films with low ferromagnetic resonance losses.

Ultra-thin rare earth iron garnet (RIG) films with a narrow ferromagnetic resonance (FMR) line width and a low damping factor have attracted a great deal of attention for microwave and spintronic applications. In this work, 200 nm Y3(GaAlFe)5O12 garnet (GaAl-YIG) films were prepared on gadolinium gallium garnet (GGG) substrates by liquid-phase epitaxy (LPE) with low saturation magnetization. The microstructural properties, chemical composition, and magnetostatic and dynamic magnetization characteristics of the films are discussed in detail. According to the structural analysis, these films exhibit a low surface roughness of less than 0.5 nm. The GaAl-YIG films show an obvious temperature dependence of lattice parameter and strain state, and the film's parameter is perfectly matched with that of the GGG substrate at 810°C. There is a clear variation in the Pb level, which brings about a gradual enhancement of the coercivity and a diminution of the squareness ratio of magnetic hysteresis loops as the growth temperature is reduced. Slight changes in surface roughness, strain condition and content of Pb induce the FMR line width and damping factor to vary on a small scale. The line width is less than 10.17 Oe at 12 GHz and the damping factor is of the order of 10-4. All these properties demonstrate that these ultra-thin GaAl-YIG films are of benefit for the development of devices operated at lower frequencies and in lower fields.

Giant Extrinsic Spin Hall Effect in Platinum-Titanium Oxide Nanocomposite Films.

Although the spin Hall effect provides a pathway for efficient and fast current-induced manipulation of magnetization, application of spin-orbit torque magnetic random access memory with low power dissipation is still limited to spin Hall materials with low spin Hall angles or very high resistivities. This work reports a group of spin Hall materials, Pt1 -x (TiO2 )x nanocomposites, that combines a giant spin Hall effect with a low resistivity. The spin Hall angle of Pt1 -x (TiO2 )x in an yttrium iron garnet/Pt1 -x (TiO2 )x double-layer heterostructure is estimated from a combination of ferromagnetic resonance, spin pumping, and inverse spin Hall experiments. A giant spin Hall angle 1.607 ± 0.04 is obtained in a Pt0.94 (TiO2 )0.06 nanocomposite film, which is an increase by an order of magnitude compared with 0.051 ± 0.002 in pure Pt thin film under the same conditions. The great enhancement of spin Hall angle is attributed to strong side-jump induced by TiO2 impurities. These findings provide a new nanocomposite spin Hall material combining a giant spin Hall angle, low resistivity and excellent process compatibility with semiconductors for developing highly efficiency current-induced magnetization switching memory devices and logic devices.

High-Performance Multifunctional Photodetector and THz Modulator Based on Graphene/TiO2/p-Si Heterojunction.

In this paper, we have reported a multifunctional device from graphene/TiO2/p-Si heterojunction, followed by its systematical analysis of optical response in a device under ultraviolet-visible-infrared band and transmission changes of terahertz waves in the 0.3-1.0 THz band under different bias voltages. It is found that photodetector in the "back-to-back" p-n-p energy band structure has a seriously unbalanced distribution of photogenerated carriers in the vertical direction when light is irradiated from the graphene side. So this ensures a higher optical gain of the device in the form of up to 3.6 A/W responsivities and 4 × 1013 Jones detectability under 750 nm laser irradiation. Besides, the addition of TiO2 layer in this terahertz modulator continuously widens the carrier depletion region under negative bias, thereby realizing modulation of the terahertz wave, making the modulation depth up to 23% under - 15 V bias. However, almost no change is observed in the transmission of terahertz wave when a positive bias is applied. A similar of an electronic semiconductor diode is observed that only allows the passage of terahertz wave for negative bias and blocks the positive ones.

Effect of Interfacial Roughness Spin Scattering on the Spin Current Transport in YIG/NiO/Pt Heterostructures.

Interfacial properties play a vital role in spin current injection from the ferromagnetic (FM) layer into the nonmagnetic (NM) layer. So far, impedance matching and spin-orbit coupling are two important, well-known factors in spin current transport in FM/NM heterostructures. In this work, the spin current transport in Y3Fe5O12 (YIG)/NiO/Pt heterostructures was investigated by spin Hall magnetoresistance and inverse spin Hall effect measurements. By inserting a layer of antiferromagnetic insulator NiO, the magnetic proximity effect affecting the Pt atoms owing to YIG and the anomalous spin Hall voltage can be efficiently blocked. Ferromagnetic resonance and spin pumping measurements verified that the ferromagnetic/antiferromagnetic exchange coupling inhibits transmission of the spin current at the YIG/NiO interface when the NiO layer is thick. Atomic force microscopy and spherical aberration-corrected transmission electron microscopy proved that the strong interfacial roughness-enhanced spin scattering between NiO and Pt can greatly increase both the inverse spin Hall voltage and the spin Hall magnetoresistance when the NiO layer is thin or even discontinuous. This interface roughness-dominated spin scattering mechanism based on the YIG/NiO/Pt heterostructure is a new discovery, and there is significant potential for exploiting this mechanism in the construction of low-dissipation spintronic devices with an efficient spin current injection.

High-Performance All-Optical Terahertz Modulator Based on Graphene/TiO2/Si Trilayer Heterojunctions.

In this paper, we demonstrate a trilayer hybrid terahertz (THz) modulator made by combining a p-type silicon (p-Si) substrate, TiO2 interlayer, and single-layer graphene. The interface between Si and TiO2 introduced a built-in electric field, which drove the photoelectrons from Si to TiO2, and then the electrons injected into the graphene layer, causing the Fermi level of graphene to shift into a higher conduction band. The conductivity of graphene would increase, resulting in the decrease of transmitted terahertz wave. And the terahertz transmission modulation was realized. We observed a broadband modulation of the terahertz transmission in the frequency range from 0.3 to 1.7 THz and a large modulation depth of 88% with proper optical excitation. The results show that the graphene/TiO2/p-Si hybrid nanostructures exhibit great potential for terahertz broadband applications, such as terahertz imaging and communication.

Reconfigurable nanoscale spin-wave directional coupler using spin-orbit torque.

We present a reconfigurable nanoscale spin-wave directional coupler based on spin-orbit torque (SOT). By micromagnetic simulations, it is demonstrated that the functionality and operating frequency of proposed device can be dynamically switched by inverting the whole or part of the relative magnetic configuration of the dipolar-coupled waveguides using SOT. Utilizing the effect of sudden change in coupling length, the functionality of power divider can be realized. The proposed reconfigurable spin-wave directional coupler opens a way for two-dimensional planar magnonic integrated circuits.

Infrared Properties and Terahertz Wave Modulation of Graphene/MnZn Ferrite/p-Si Heterojunctions.

MnZn ferrite thin films were deposited on p-Si substrate and used as the dielectric layer in the graphene field effect transistor for infrared and terahertz device applications. The conditions for MnZn ferrite thin film deposition were optimized before device fabrication. The infrared properties and terahertz wave modulation were studied at different gate voltage. The resistive and magnetic MnZn ferrite thin films are highly transparent for THz wave, which make it possible to magnetically modulate the transmitted THz wave via the large magnetoresistance of graphene monolayer.

Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method.

Ge-based alloys have drawn great interest as promising materials for their superior visible to infrared photoelectric performances. In this study, we report the preparation and optical properties of germanium-bismuth (Ge1-xBix) thin films by using molecular beam epitaxy (MBE). GeBi thin films belong to the n-type conductivity semiconductors, which have been rarely reported. With the increasing Bi-doping content from 2 to 22.2%, a series of Ge1-xBix thin film samples were obtained and characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. With the increase of Bi content, the mismatch of lattice constants increases, and the GeBi film shifts from direct energy band-gaps to indirect band-gaps. The moderate increase of Bi content reduces optical reflectance and promotes the transmittance of extinction coefficient in infrared wavelengths. The absorption and transmittance of GeBi films in THz band increase with the increase of Bi contents.

Manipulate the magnetic anisotropy of nanoparticle assemblies in arrays.

Tuning the magnetic anisotropy of nanoparticle assemblies is critical for their applications such as on-chip magnetic electronic components and electromagnetic wave absorption. In this work, we developed a facile hierarchical self-assembly method to separately control the magnetic shape and magnetocrystalline anistropy of individual nanoparticle assemblies in arrays. Since magnetic nanoparticle assemblies in the array have the same size, shape and alignment, we are able to study the magnetic properties of individual nanoparticle assembly by measuring the whole arrays. The interplay between the two magnetic anisotropies was systematically studied for disk- and bar-shaped nanoparticle assemblies. Maximum magnetic anisotropy was obtained when the easy axis of magnetic nanoparticles was aligned along the long axes of the bar-shaped nanoparticles assemblies.

Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates.

Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10-180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400-1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 µm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths.