Remote epitaxy through graphene enables two-dimensional material-based layer transfer.

Epitaxy-the growth of a crystalline material on a substrate-is crucial for the semiconductor industry, but is often limited by the need for lattice matching between the two material systems. This strict requirement is relaxed for van der Waals epitaxy, in which epitaxy on layered or two-dimensional (2D) materials is mediated by weak van der Waals interactions, and which also allows facile layer release from 2D surfaces. It has been thought that 2D materials are the only seed layers for van der Waals epitaxy. However, the substrates below 2D materials may still interact with the layers grown during epitaxy (epilayers), as in the case of the so-called wetting transparency documented for graphene. Here we show that the weak van der Waals potential of graphene cannot completely screen the stronger potential field of many substrates, which enables epitaxial growth to occur despite its presence. We use density functional theory calculations to establish that adatoms will experience remote epitaxial registry with a substrate through a substrate-epilayer gap of up to nine ångströms; this gap can accommodate a monolayer of graphene. We confirm the predictions with homoepitaxial growth of GaAs(001) on GaAs(001) substrates through monolayer graphene, and show that the approach is also applicable to InP and GaP. The grown single-crystalline films are rapidly released from the graphene-coated substrate and perform as well as conventionally prepared films when incorporated in light-emitting devices. This technique enables any type of semiconductor film to be copied from underlying substrates through 2D materials, and then the resultant epilayer to be rapidly released and transferred to a substrate of interest. This process is particularly attractive in the context of non-silicon electronics and photonics, where the ability to re-use the graphene-coated substrates allows savings on the high cost of non-silicon substrates.

Direct determination of structural heterogeneity in metallic glasses using four-dimensional scanning transmission electron microscopy.

We report the first direct quantification of the structural heterogeneity in metallic glasses using intensity variance and angular correlation analyses of the 4-dimensional (4-D) scanning transmission electron microscopy (STEM) data. We demonstrate that the real-space reconstruction and analyses of the 4-D nanodiffraction data acquired using a pixelated fast STEM detector enables quantitative determination of the details of local structural heterogeneity, including the type, size, volume fraction and spatial distribution of local ordering at the nano- to meso-scale, beyond the limits of the previous measurements using conventional detectors. We show that different types of local ordering are present in Zr55Co25Al20 glass, leading to a high degree of structural heterogeneity, with the total volume of locally ordered regions making up to ∼14% of the entire volume. These findings are significant, as the structure-property relationship in metallic glasses and other amorphous materials has been difficult to establish because of the lack of detailed structural information from experiments.

Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy.

We propose a new scanning transmission electron microscopy (STEM) technique that can realize the three-dimensional (3D) characterization of vacancies, lighter and heavier dopants with high precision. Using multislice STEM imaging and diffraction simulations of ß-Ga2O3 and SrTiO3, we show that selecting a small range of low scattering angles can make the contrast of the defect-containing atomic columns substantially more depth-dependent. The origin of the depth-dependence is the de-channeling of electrons due to the existence of a point defect in the atomic column, which creates extra "ripples" at low scattering angles. The highest contrast of the point defect can be achieved when the de-channeling signal is captured using the 20-40mrad detection angle range. The effect of sample thickness, crystal orientation, local strain, probe convergence angle, and experimental uncertainty to the depth-dependent contrast of the point defect will also be discussed. The proposed technique therefore opens new possibilities for highly precise 3D structural characterization of individual point defects in functional materials.

Engineering 1D Quantum Stripes from Superlattices of 2D Layered Materials.

Dimensional tunability from two dimensions to one dimension is demonstrated for the first time using an artificial superlattice method in synthesizing 1D stripes from 2D layered materials. The 1D confinement of layered Sr2 IrO4 induces distinct 1D quantum-confined electronic states, as observed from optical spectroscopy and resonant inelastic X-ray scattering. This 1D superlattice approach is generalizable to a wide range of layered materials.

Nonlinear Electron-Lattice Interactions in a Wurtzite Semiconductor Enabled via Strongly Correlated Oxide.

With VO2 , a classic strongly correlated oxide material, a model semiconductor CdS is stretched and its electron-lattice interaction in a nonlinear manner is modulated. Optical spectroscopy is applied to probe the electronic band structure-associated parameters which is explained by the theoretical prediction based on k·p method and microscopy study. The research provides a new avenue on dynamic straining engineering.